一致空间的理想导集映射

本文介绍一致空间的理想导集映射,并对这些映射的像展开研究.同时,介绍I-Hurewicz有界性的概念,研究I-Hurewicz有界性的基础拓扑运算性质.最后,得到一致空间中I-Hurewicz有界性的一个等价刻画.     

Ru、Rh、Pd掺杂GaSb的电子结构和光学性质

运用第一性原理计算方法研究了过渡族金属TM(TM=Ru、Rh、Pd)掺杂GaSb的电子结构和光学性质,结果表明:TM掺杂GaSb主要以TM替代Ga(TM @Ga)缺陷存在,并可增强GaSb半导体材料对红外光区光子的响应,使体系光学吸收谱的吸收边红移;TM@Ga所引入的杂质能级分布于零点费米能级附近,这极大地增强了体系的介电性能,促进了电子-空穴对的产生和迁移,因而提升了掺杂体系的光电转换效率;Ru 掺杂对GaSb光学性质的改善最为明显,当掺杂浓度为6.25%(原子数分数)且均匀掺杂时,Ru掺杂GaSb体系对红外光区光子的吸收幅度最大,有效提升了GaSb光电转换效率和光催化活性。     

尖晶石型LiMn2O4的低温制备

锂锰氧化物;溶胶凝胶法;尖晶石型LiMn2O4的低温制备     

WO3表面的氧缺陷

用不同能量的Ar⁺和H⁺轰击WO₃表面,观察到W_4f峰的位移和加宽。通过谱分解处理得到相应于W_4f电子的W⁶⁺,W⁴⁺和W⁰3个不同的双峰。用表面产生氧缺陷的机理解释了还原过程。UPS谱显示出氧缺陷的存在增加了靠近费密能级处的态密度。H₂O的吸附结果说明WO₃表面的活性与W^{5+< 关键词：}     

面内磁场对硬磁泡形成的影响

实验研究了面内磁场对一次脉冲偏磁场作用下外延石榴石薄膜中硬磁泡形成的影响,发现存在一个使硬磁泡不再形成的临界面内磁场H_in⁰,它与材料参量有关,通过实验,运用面内磁场对条状畴的作用和枝状畴的形成,定性解释了软硬磁泡形成的分界场H_[b]随面内磁场增大、快降以及缓降这三个物理过程。 关键词：     

系列脉冲偏磁场作用下硬磁泡的形成

实验研究了系列脉冲偏场作用下外延石榴石薄膜的硬磁泡(包括哑铃畴)的形成规律。发现系列脉冲对畴段的作用不是单次脉冲作用(软畴段硬化的物理过程)的简单迭加,而有其特有的规律性,存在着硬畴段进一步硬化及硬畴段软化的另两个物理过程。运用上述三个物理过程对实验结果作了解释。 关键词：     

准正电子偶素弛豫机制的研究

理论上研究了碱卤晶体中准正电子偶素(qPs)的弛豫机制。指出造成弛豫的原因,是电子云极化波对c⁺-e^-库仑势的屏蔽。考虑到Toyozawa的相互作用哈密顿量已不适用于qPs的情形,采用唯象方法,对相互作用能给予短程力修正。利用顾世洧处理激子的方法,可以求解得到qPs的有效哈密顿量。变分法的数值计算表明,所采用的模型,能得到与实验结果一致的结论,较好地解释了qPs的弛豫现象。 关键词：     

MEASUREMENT OF LOW MAGNETIC FIELD DISTRIBUTION OF A β SPECTROMETER

The low magnetic field distribution of an iron-core double-focusing low-energy β spectrometer is measured with a second harmonic magnetic flux gate magnetometer, the relative measuring precision is better than ±0.05%. The field strength of the spectrometer is about 10G. This spectrometer is used to measure the β spectrum from tritium β decay for estimating the rest mass of electron antineutrion.     

FORMATION OF A BURIED LAYER OF ALUMINIUM NITRIDE BY HIGH DOSE N2+ IMPLANTATION INTO ALUMINIUM

Aluminium films with various thickness between 700 nm and 1μm were deposited on Si (100) substrates, and 400 keV N₂⁺ ions with doses ranging from 4.3×10¹⁷ to 1.8×10¹⁸ N/cm² were implanted into the alu-minium films on silicon, Rutherford Backscattering (RBS) and channeling, secondary ion mass spectroscopy (SIMS), Fourier transform infrared spectra (FTIR), X-ray diffraction (XRD), transmission electron microscopy (TEM) and spreading resistance probes (SRP) were used to characterize the synthesized aluminium nitride. The experiments showed that when the implantation dose was higher than a critical dose N_c, a buried stoichiometric AlN layer with high resistance was formed, while no apparent AlN XRD peaks in the as-implanted samples were observed; however, there was a strong AlN(100) diffraction peak appearing after annealing at 500 ℃ for 1h. The computer program, Implantation of Reactive Ions into Silicon (IRIS), has been modified and used to simulate the formation of the buried AlN layer as N₂⁺ is implanted into aluminium. We find a good agreement between experimental measurements and IRIS simulation.