Surface grating formation and erasing on a-Se films

Surface relief formation at holographic recording on amorphous selenium films was demonstrated and investigated. The presence of this optical phase modulation component is essential for ensuring significant, stable and erasable optical recording in a-Se films at 290–320 K temperatures, where conventional photodarkening was known as insignificant and unstable. Photocrystallization can only be observed in super-exposed a-Se films at the given experimental conditions of hologram recording. Erasing behavior of surface relief gratings under heat treatment was also investigated in order to reveal further details of the mechanism. Photoinduced structural transformations within the amorphous phase, connected to local ordering under the condition of light-induced fluidity, are proposed as an explanation for the relief formation and erasing. The observed reversible optical recording process may be useful for the various optoelectronic applications of photoconductive a-Se layers. Received: 12 June 2000 / Accepted: 6 June 2001 / Published online: 30 August 2001     

A statistical approach to the solution of ill-posed problems in geophysics

The article surveys the main results of the statistical approach to the solution of ill-posed problems of mathematical physics, in application to specific ill-posed inverse problems in geophysics.Invited paper presented at the International Seminar on Mathematical Foundations of the Interpretation of Geophysical Fields, Moscow, May–June 1972.Translated from Zapiski Nauchnykh Seminarov Leningradskogo Otdeleniya Matematicheskogo Instituta im. V. A. Steklova AN SSSR, Vol. 79, pp. 67–81, 1978.     

Temperature dependence of corundum roentgenoluminescence and thermoluminescence

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 54, No. 3, pp. 438–444, March, 1991.     

Roles of SiH4 and SiF4 in growth and structural changes of poly-Si films

The structural properties of polycrystalline silicon films, prepared by plasma enhanced chemical vapor deposition system, with different flow rates of SiH₄/SiF₄ mixtures at 300 °C were investigated. This study indicates that the low hydrogen coverage on the growing surface, under optimum fluorine radicals, will be leaded to an improvement of crystallized area as compared with case of high hydrogen coverage surface. Moreover, the studies of the role of SiH₄ and SiF₄ radicals show that the SiH₄ radicals are important in the nucleation and growth of grains. However, SiF₄ radicals are effective in the structural change of grain boundaries regions and by this way, in the present system, establish the growth of grains under the dominant 〈1 1 0〉 direction. The stress investigation indicates that addition of high flow rate of SiF₄ in amorphous film, results in the nearly stress free films. Finally, we found that the changes in g-value reflect the changes in the intrinsic compressive and tensile stress in the both polycrystalline and amorphous silicon films.     

Effect of trapping centers of luminescent properties of bismuth orthogermanate

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 54, No. 6, pp. 970–975, June, 1991.     

Self-transparency effect in a twisted nematic liquid crystal cell

In a twisted nematic liquid crystal cell we report and study the self-transparency effect induced by the creation of an isotropic droplet. A simple theoretical model is presented and good agreement with experimental data is found. In a two beams configuration transistor-like behavior is observed and theoretically discussed.     

Observation of the nonlinear effect in relativistic Thomson scattering of electron and laser beams

Thomson scattering of high-power laser and electron beams is a good test of electrodynamics in the high-field region. We demonstrated production of high-intensity X-rays in the head-on collision of a CO₂ laser and 60-MeV electron beams at Brookhaven National Laboratory, Accelerator Test Facility. The energy of an X-ray photon was limited at 6.5 keV in the linear (lowest order) Thomson scattering, but the nonlinear (higher order) process produces higher energy X-rays. We measured the angular distribution of the high-energy X-rays and confirmed that it agrees with theoretical predictions.