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981.
V. Palyok I.A. Szabó D.L. Beke A. Kikineshi 《Applied Physics A: Materials Science & Processing》2002,74(5):683-687
Surface relief formation at holographic recording on amorphous selenium films was demonstrated and investigated. The presence
of this optical phase modulation component is essential for ensuring significant, stable and erasable optical recording in
a-Se films at 290–320 K temperatures, where conventional photodarkening was known as insignificant and unstable. Photocrystallization
can only be observed in super-exposed a-Se films at the given experimental conditions of hologram recording. Erasing behavior
of surface relief gratings under heat treatment was also investigated in order to reveal further details of the mechanism.
Photoinduced structural transformations within the amorphous phase, connected to local ordering under the condition of light-induced
fluidity, are proposed as an explanation for the relief formation and erasing. The observed reversible optical recording process
may be useful for the various optoelectronic applications of photoconductive a-Se layers.
Received: 12 June 2000 / Accepted: 6 June 2001 / Published online: 30 August 2001 相似文献
982.
D. V. Vyalykh A. M. Shikin G. V. Prudnikova A. Yu. Grigor’ev A. G. Starodubov V. K. Adamchuk 《Physics of the Solid State》2002,44(1):164-170
This paper reports on the first experimental observation of quantum-well states and sp-type resonances in thin single-crystal gold, silver, and copper layers formed on single-crystal W(110) surfaces, which result from spatial localization of Bloch-type electronic wave functions in a quantum well with potential barriers at the vacuum/metal and metal/W(110) interfaces. The quantization of the valence-band electronic structure in Au/W(110), Ag/W(110), and Cu/W(110) systems was studied experimentally using angle-resolved photoelectron spectroscopy. 相似文献
983.
The Al2O3−CdSe interface of a thin-film transistor is investigated in the frequency range 30 Hz-30 kHz under weak depletion and accumulation.
The surface states are, most likely, located in the insulator Al2O3 with a concentration varying from 4·1018 to 1019 cm−3 eV−1. The surface states have a negligible influence on the thin-film transistor operation. 相似文献
984.
985.
986.
The simple relation between representations of the covering groups of SL2 and GL2 makes it possible to fuse and extend the recent metaplectic results of Shimura, Waldspurger, Flicker, and ourselves. By giving a new (purely local andL-function theoretic) treatment of the Waldspurger-Shintani correspondence, we also simplify some of Waldspurger’s original results. 相似文献
987.
The problem of the vector and axial-vector dominance of weak interactions within the framework of the quark model of superconductivity type is discussed. 相似文献
988.
989.
Yu. V. Borovskikh 《Journal of Mathematical Sciences》1991,53(4):353-358
Estimates of a rate of convergence of orderO(n
–1) are obtained for integral functionals of an empirical process.Translated fromTeoriya Sluchainykh Protsessov, Vol. 15, pp. 10–16, 1987. 相似文献
990.
V. Yu. Korolev 《Journal of Mathematical Sciences》1991,57(4):3270-3277
Translated fromProblemy Ustoichivosti Stokhasticheskikh Modelei. Trudy Seminara, 1988, pp. 84–92. 相似文献