首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   498044篇
  免费   6275篇
  国内免费   3158篇
化学   247598篇
晶体学   7794篇
力学   24506篇
综合类   128篇
数学   69942篇
物理学   157509篇
  2020年   3664篇
  2019年   3977篇
  2018年   12194篇
  2017年   12836篇
  2016年   10565篇
  2015年   5524篇
  2014年   7367篇
  2013年   18108篇
  2012年   17934篇
  2011年   27663篇
  2010年   18196篇
  2009年   18122篇
  2008年   24742篇
  2007年   27636篇
  2006年   15523篇
  2005年   19204篇
  2004年   15299篇
  2003年   13986篇
  2002年   12254篇
  2001年   12561篇
  2000年   9763篇
  1999年   7257篇
  1998年   6152篇
  1997年   6013篇
  1996年   6016篇
  1995年   5304篇
  1994年   5302篇
  1993年   5237篇
  1992年   5559篇
  1991年   5720篇
  1990年   5366篇
  1989年   5234篇
  1988年   5209篇
  1987年   5059篇
  1986年   4891篇
  1985年   6583篇
  1984年   6800篇
  1983年   5670篇
  1982年   5967篇
  1981年   5754篇
  1980年   5384篇
  1979年   5736篇
  1978年   5990篇
  1977年   5870篇
  1976年   5961篇
  1975年   5445篇
  1974年   5602篇
  1973年   5706篇
  1972年   4197篇
  1971年   3414篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
941.
Raman scattering studies were performed on hot-wall chemical vapor deposited (heteroepitaxial) silicon carbide (SiC) films grown on Si substrates with orientations of (1 0 0), (1 1 1), (1 1 0) and (2 1 1), respectively. Raman spectra suggested that good quality cubic SiC single crystals could be obtained on the Si substrate, independent of its crystallographic orientation. Average residual stresses in the epitaxially grown 3C-SiC films were measured with the laser waist focused on the epilayer surface. Tensile and compressive residual stresses were found to be stored within the SiC film and in the Si substrate, respectively. The residual stress exhibited a marked dependence on the orientation of the substrate. The measured stresses were comparable to the thermal stress deduced from elastic deformation theory, which demonstrates that the large lattice mismatch between cubic SiC and Si is effectively relieved by initial carbonization. The confocal configuration of the optical probe enabled a stress evaluation along the cross-section of the sample, which showed maximum tensile stress magnitude at the SiC/Si interface from the SiC side, decreasing away from the interface in varied rate for different crystallographic orientations. Defocusing experiments were used to precisely characterize the geometry of the laser probe in 3C-SiC single crystal. Based on this knowledge, a theoretical convolution of the in-depth stress distribution could be obtained, which showed a satisfactory agreement with stress values obtained by experiments performed on the 3C-SiC surface.  相似文献   
942.
We consider three one-dimensional quantum, charged and spinless particles interacting through delta potentials. We derive sufficient conditions which guarantee the existence of at least one bound state.  相似文献   
943.
944.
[Theg-factor ratio of the first excited 3? and 5? states in40Ca was measured to beg 3/g 5=1.01(10) employing the implantation perturbed angular correlation technique. The static hyperfine fields (SF) in Fe and Gd hosts were used. In addition the lifetime of the 5? state was measured to be τ=426(7)ps. The values of the SF in Gd and Fe hosts were deduced and compared with systematics in this element region.  相似文献   
945.
946.
947.
New methods for calculating the mean volumetric flow rate of the carrier gas and the retention time of the unretained substance in the column under conditions of gas chromatography were proposed. The methods are based on preliminary isothermal calibrations of the flow rate and holdup time for a packed column. A theoretical substantiation of the methods was given. Procedures of plotting calibration dependences for determining the indicated quantities at a desired temperature were described. The calculation results were compared to experimental data obtained by traditional methods. It was demonstrated that the use of calculation methods substantially simplifies the determination of the specific retention volume over a wide temperature range.  相似文献   
948.
949.
We establish constructive existence conditions and construct a generalized Green operator for the construction of solutions of a Noetherian linear boundary-value problem for a system of ordinary differential equations with switchings and pulse action in critical and noncritical cases. __________ Translated from Neliniini Kolyvannya, Vol. 10, No. 1, pp. 51–65, January–March, 2007.  相似文献   
950.
Litharge, the red tetragonal form of lead oxide α-PbO and massicot, the yellow orthorhombic form β-PbO, are synthesized from lead(II) salts in aqueous media at elevated temperatures. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) were used to characterize the size, morphology, and crystallographic structural forms of the products. The role of impurities in the experimental synthesis of the materials and microstructural variations in the final products are described. The implications of these observations regarding the synthesis of different conducting lead oxides and other related materials are discussed. PACS 71.20.Ps; 72.80.Jc; 74.62.Bf; 74.62.Dh; 75.50.Tt  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号