Effects of sputter deposition parameters and post-deposition annealing on the electrical characteristics of LaAlO3 dielectric films on Si

The influence of processing parameters on the electrical characteristics of RuO₂/LaAlO₃/Si metal-oxide-semiconductor structures was investigated. In particular, the sputtering regime during deposition of LaAlO₃ on Si and the atmosphere used in the post-deposition annealing step were addressed by determining capacitance-voltage and gate current-voltage characteristics. These results were correlated with compositional information obtained by Rutherford backscattering spectrometry and nuclear reaction analysis. A post-deposition annealing step in oxygen at 600 °C resulted in better electrical characteristics of the final structure as compared to the same treatment performed in nitrogen. This result is explained by oxygen ability to heal oxygen vacancies in the LaAlO₃ film, especially at the dielectric/semiconductor interface region. A thermalized sputtering regime during deposition of LaAlO₃ on Si leads to capacitors with electrical characteristics superior to those deposited in ballistic regime. PACS 77.84.Dy; 81.15.Cd; 81.40.Gh; 73.40.Qv; 82.80.Yc     

Some Estimates for the Derivative of a Quasiconformal Reflection Spiral-Shaped Domains

Some estimates of derivatives are sharpened for quasiconformal reflections of a special class of simply connected plane domains. Bibliography: 2 titles.     

Structural evolution in amorphous silicon and germanium thin films.

The structural evolution in amorphous silicon and germanium thin films has been investigated by high-resolution transmission electron microscopy (HRTEM) in conjunction with autocorrelation function (ACF) analysis. The results established that the structure of as-deposited semiconductor films is of a high density of nanocrystallites embedded in the amorphous matrix. In addition, from ACF analysis, the structure of a-Ge is more ordered than that of a-Si. The density of embedded nanocrystallites in amorphous films was found to diminish with annealing temperature first, then to increase. The conclusions also corroborate well with the results of diminished medium-range order in annealed amorphous films determined previously by a variable coherence microscopy method.     

Transverse effects under four-wave coupling in the nonlinear Fabry-Perot interferometer

Optics and Spectroscopy - Specific features of the light-beam transverse structure transformation in the process of four-wave coupling in the Fabry-Perot interferometer with a resonant nonlinearity...     

Mod 2 cohomology of combinatorial Grassmannians

Matroid bundles, introduced by MacPherson, are combinatorial analogues of real vector bundles. This paper sets up the foundations of matroid bundles. It defines a natural transformation from isomorphism classes of real vector bundles to isomorphism classes of matroid bundles. It then gives a transformation from matroid bundles to spherical quasifibrations, by showing that the geometric realization of a matroid bundle is a spherical quasifibration. The poset of oriented matroids of a fixed rank classifies matroid bundles, and the above transformations give a splitting from topology to combinatorics back to topology. A consequence is that the mod 2 cohomology of the poset of rank k oriented matroids (this poset classifies matroid bundles) contains the free polynomial ring on the first k Stiefel-Whitney classes.     

Magnetic properties of oxygenated carbon nitride films from RF-discharge in an acetylene, nitrogen, and oxygen mixture environments

Properties of oxygenated carbon nitride films have attracted the attention of physics researchers due to their magnetic and physical properties, as well as for their usefulness in the industry. The free radicals were investigated using electron paramagnetic resonance applied in the study of spin concentration due to the different mechanism of preparation of carbon nitride films by RF-discharge with different kinds of plasma. Unpaired spin concentrations, in the order of 10²⁰ per cm³, were measured and their time recombination dependency was important in those films. The films were grown by plasma enhanced chemical vapor deposition using mixtures of hydrocarbons, N₂ and O₂ in different proportions.     

Three-dimensional radiative transfer in an anisotropically scattering, semi-infinite medium: generalized reflection function

Three-dimensional radiative transfer in an anisotropic scattering medium exposed to spatially varying, collimated radiation is studied. The generalized reflection function for a semi-infinite medium with a very general scattering phase function is the focus of this investigation. An integral transform is used to reduce the three-dimensional transport equation to a one-dimensional form, and a modified Ambarzumian's method is applied to formulate a nonlinear integral equation for the generalized reflection function. The integration is over both the polar and azimuthal angles; hence, the integral equation is said to be in the double-integral form. The double-integral, reflection function formulation can handle a variety of anisotropic phase functions and does not require an expansion of the phase function in a Legendre polynomial series. Complicated kernel transformations of previous single-integral studies are eliminated. Single and double scattering approximations are developed. Numerical results are presented for a Rayleigh phase function to illustrate the computational characteristics of the method and are compared to results obtained with the single-integral method. Agreement between the two approaches is excellent; however, as the transform variable increases beyond five the number of quadrature points required for the double-integral method to produce accurate solutions significantly increases. A new interpolation scheme produces accurate results when the transform variable is large.     

Metastability in the Potts model on the Cayley tree

Metastability in the ferromagneticp-state Potts model defined on the Cayley tree is discussed. It is shown that the sign of the boundary fieldH _s determines the order of the transition as well as the stability of the low-temperature phase. Lowering the temperature withH _s >0, a system withp<2 (p>2) will display a second (first)-order transition to a metastable (stable) phase. ForH _s >0 a second (first)-order transition to a metastable (stable) phase occurs ifp>2 (p<2). In this case the system also has a residual entropy which is negative forp<2.     

Efficiency of the multiwave method of determination of the ozone content in the atmosphere by UV spectrometry-ozonometry

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 55, No. 3, pp. 472–477, September, 1991.     

Influence of copper solute on the creep rate sensitivities of aluminium

The presence of copper atoms as continuous networks at the grain boundaries of an aluminium-copper alloy has been considered not preventing the moving of dislocations during creep (or at least partially). The dislocations can bs absorbed by these boundaries and penetrate through them. That leads to changés of shape and structure of grains and also to the sliding of grains against each other. This was deduced from the accelerating increase in the sensitivity of the steady state creep rate to the applied stress of an aluminium 2·8 wt% copper alloy examined at wide range of temperatures (50–350 °C) and applied stresses (7–170 MPa). This rapid increase in the sensitivity parameter of the steady state creep rate occurs in Al-Cu alloys at quite higher ranges of applied stresses and may be attributed mainly to the contribution of the grain boundary movements to the creep strain.