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101.
We clarify the transient and equilibrium charging characteristics of grounded dielectrics due to low-energy defocused electron beam irradiation by a three-dimensional self-consistent simulation model. The model incorporates the electron scattering, transport and trapping. Results show that some electrons can arrive at the grounded substrate due to the internal field and density gradient, forming the leakage current. The transient charging process tends to equilibrium as the surface potential decreases and the leakage electron current increases. The positive and negative space charges are distributed alternately along the beam incident direction. In the equilibrium state, the surface potential and leakage electron current decrease to stable values with increasing film thickness and the trap density, but with decreasing electron mobility. Moreover, the surface potential of the dielectric thin film exhibits a maximum negative value with variation of the beam energy; for example, under the condition of the film thicknesses 0.5 μm and 2 μm, the maximum negative values of surface potentials are -13 V and -98 V in beam energies 2 keV and 3.5 keV, respectively. However, for the thick film, the surface potential decreases with the increase in beam energy. 相似文献
102.
Application of a broadband blue laser diode to trace NO2 detection using off-beam quartz-enhanced photoacoustic spectroscopy 总被引:1,自引:0,他引:1
We applied for the first time, to our knowledge, broadband off-beam quartz-enhanced photoacoustic spectroscopy (BB-OB-QEPAS) to trace NO2 detection using a broadband blue laser diode centered at 450?nm. A detection limit of 18?ppbv (parts in 10(9) by volume) for NO2 in N2 at atmospheric pressure was achieved with an average laser power of 7?mW at a 1?s integration time, which corresponds to a 1?σ normalized noise equivalent absorption coefficient of 4.1×10(-9) cm(-1)?W=Hz(1=2). An Allan variance analysis was performed to investigate the long-term stability of the BB-OB-QEPAS-based NO2 sensor. 相似文献
103.
采用电感耦合等离子体-质谱(ICP-MS)法测定了湖北省长阳县乐园镇产开口箭根茎中27中金属元素的含量.其中13中金属元素V、Cr、Mn、Fe、Cu、Zn、As、Se、Mo、Ag、Cd、Tl、Pb等采用普通模式检测,14种金属元素Li、Be、B、Mg、Al、Co、Ni、Ga、Rb、Sr、Te、Ba、Bi、U等采用碰撞/反应池技术(CCT)模式测定,以消除样品溶液中潜在的干扰.实验条件下,Co、Ni、Cr、Zn、Se、Mo、Ag、Pb等8种金属元素未检出.方法检出限Fe为9.789ng/mL、Cr为2.691ng/mL,Zn为1.803ng/mL,B为2.076ng/mL,Mg为1.977ng/mL,Al为3.024ng/mL,Ni为1.824ng/mL,其它元素为0.003-0.921ng/mL,精密度的RSD为0.164%-9.933%,加标回收介于90.0%-110.0%之间. 相似文献
104.
By applying a femtosecond stimulating pulse, we theoretically study the stimulated processes of an exciton and a biexciton in a polymer within the framework of an extended Su–Schrieffer–Heeger tight-binding model. For an exciton, it is obtained that the stimulated emission and absorption between the intragap levels take place with the same probability, by which we will not get the light amplification. However, the light amplification can be realized by the stimulated emission between the intragap levels in a biexciton, which is found to have two different modes. Finally, effect of the stimulating energy and intensity on the stimulated processes is separately analyzed. These results might be of great importance for further improving the optical applications of polymers, especially for optimizing the polymer laser properties. 相似文献
105.
106.
针对目前大功率固体激光加工系统的特点,结合相关产品使用的网络构架,研制开发了一套基于Internet的远程监控系统。它是一种将网络技术与系统监控相结合,在异地通过Internet实时监控系统的运行状态,并为系统的故障诊断提供依据的技术。该系统具有高效性、准确性和实时性等特点。在设计方面采用了先进的软件构架,可以实时监控激光加工系统的操作情况和参数状态;查询激光加工系统的当前数据和历史数据,并对开放权限的数据进行修改;通过和用户在线沟通完成疑难问题的解答。 相似文献
107.
研制了可用于大型爆炸现场的、 测量爆炸火焰真温的多光谱温度计(量程为800~3 500 ℃,波长范围为0.6~1.1 μm)。测量原理进一步改进,加入亮温逼近法解决了二次测量法初值选取困难的问题,并应用此高温计在空旷场地对3 kg TNT炸药爆炸的全过程进行测量。通过实验结果的分析可知,此高温计可以测量爆炸火焰真温变化全过程,对波阵面瞬时温度与燃烧火球温度的测量均具有很好的效果。同时,分析了影响此高温计测量精度的各个因素,得出目前制约多光谱高温计测量精度提高的主要因素仍然为真温算法及标定方法的误差,这为今后研制高精度高温计明确了方向。 相似文献
108.
109.
A low specific on-resistance(Ron,sp) integrable silicon-on-insulator(SOI) metal-oxide semiconductor field-effect transistor(MOSFET) is proposed and investigated by simulation.The MOSFET features a recessed drain as well as dual gates,which consist of a planar gate and a trench gate extended to the buried oxide layer(BOX)(DGRD MOSFET).First,the dual gates form dual conduction channels,and the extended trench gate also acts as a field plate to improve the electric field distribution.Second,the combination of the trench gate and the recessed drain widens the vertical conduction area and shortens the current path.Third,the P-type top layer not only enhances the drift doping concentration but also modulates the surface electric field distributions.All of these sharply reduce Ron,sp and maintain a high breakdown voltage(BV).The BV of 233 V and Ron,sp of 4.151 mΩ·cm2(VGS = 15 V) are obtained for the DGRD MOSFET with 15-μm half-cell pitch.Compared with the trench gate SOI MOSFET and the conventional MOSFET,Ron,sp of the DGRD MOSFET decreases by 36% and 33% with the same BV,respectively.The trench gate extended to the BOX synchronously acts as a dielectric isolation trench,simplifying the fabrication processes. 相似文献
110.