Fusion around the barrier for 7Li+12C

Fusion cross-sections for the ⁷Li + ¹²C reaction have been measured at energies above the Coulomb barrier by the direct detection of evaporation residues. The heavy evaporation residues with energies below 3 MeV could not be separated out from the α-particles in the spectrum and hence their contribution was estimated using statistical model calculations. The present work indicates that suppression of fusion cross-sections due to the breakup of ⁷Li may not be significant for ⁷Li + ¹²C reaction at energies around the barrier.     

Structural and electronic properties of group III Rich In0.53Ga0.47As(001)

The structural and electronic properties of group III rich In_0.53Ga_0.47As(001) have been studied using scanning tunneling microscopy/spectroscopy (STM/STS). At room temperature (300 K), STM images show that the In_0.53Ga_0.47As(001)–(4 × 2) reconstruction is comprised of undimerized In/Ga atoms in the top layer. Quantitative comparison of the In_0.53Ga_0.47As(001)–(4 × 2) and InAs(001)–(4 × 2) shows the reconstructions are almost identical, but In_0.53Ga_0.47As(001)–(4 × 2) has at least a 4× higher surface defect density even on the best samples. At low temperature (77 K), STM images show that the most probable In_0.53Ga_0.47As(001) reconstruction is comprised of one In/Ga dimer and two undimerized In/Ga atoms in the top layer in a double (4 × 2) unit cell. Density functional theory (DFT) simulations at elevated temperature are consistent with the experimentally observed 300 K structure being a thermal superposition of three structures. DFT molecular dynamics (MD) show the row dimer formation and breaking is facilitated by the very large motions of tricoodinated row edge As atoms and z motion of In/Ga row atoms induced changes in As–In/Ga–As bond angles at elevated temperature. STS results show there is a surface dipole or the pinning states near the valence band (VB) for 300 K In_0.53Ga_0.47As(001)–(4 × 2) surface consistent with DFT calculations. DFT calculations of the band-decomposed charge density indicate that the strained unbuckled trough dimers being responsible for the surface pinning.     

Mechanism of copper underpotential deposition at Pt(<Emphasis Type="Italic">hkl</Emphasis>)-electrodes: Quantum-chemical modelling

Mechanism of copper underpotential deposition at stepped faces of platinum single crystals Pt(hkl) is studied using cyclic voltammetry, scanning probe microscopy, and quantum-chemical modelling. It is shown that the first stage of UPD is one-dimensional decoration of the (100)- or (110)-orientated steps, then copper monolayer forms at (111)-terraces. The final stage is the secondary step decoration. Quantum-chemical modelling, with the using of long-distance potentials of the Cu-Pt and Cu-Cu pair interactions, allows estimating the energy of copper adsorption at different structure elements of the substrate (steps, kinks, terraces) and revealing the succession of the adatom monolayer formation; it also provides additional information for the identifying of the nature of voltametric peaks for different stages of the copper adsorption-desorption.     

Scanning tunneling microscopy/spectroscopy study of atomic and electronic structures of In2O on InAs and In0.53Ga0.47As(001)-(4×2) surfaces

Interfacial bonding geometry and electronic structures of In(2)O on InAs and In(0.53)Ga(0.47)As(001)-(4×2) have been investigated by scanning tunneling microscopy/scanning tunneling spectroscopy (STM/STS). STM images show that the In(2)O forms an ordered monolayer on both InAs and InGaAs surfaces. In(2)O deposition on the InAs(001)-(4×2) surface does not displace any surface atoms during both room temperature deposition and postdeposition annealing. Oxygen atoms from In(2)O molecules bond with trough In/Ga atoms on the surface to form a new layer of O-In/Ga bonds, which restore many of the strained trough In/Ga atoms into more bulklike tetrahedral sp(3) bonding environments. STS reveals that for both p-type and n-type clean In(0.53)Ga(0.47)As(001)-(4×2) surfaces, the Fermi level resides near the valence band maximum (VBM); however, after In(2)O deposition and postdeposition annealings, the Fermi level position is close to the VBM for p-type samples and close to the conduction band minimum for n-type samples. This result indicates that In(2)O bonding eliminates surface states within the bandgap and forms an unpinned interface when bonding with In(0.53)Ga(0.47)As/InP(001)-(4×2). Density function theory is used to confirm the experimental finding.     

Air-stable spin-coated naphthalocyanine transistors for enhanced chemical vapor detection

Air-stable organic thin-film transistor (OTFT) sensors fabricated using spin-cast films of 5,9,14,18,23,27,32,36-octabutoxy-2,3-naphthalocyanine (OBNc) demonstrated improved chemical vapor sensitivity and selectivity relative to vacuum-deposited phthalocyanine (H(2)Pc) OTFTs. UV-vis spectroscopy data show that annealed spin-cast OBNc films exhibit a red-shift in the OBNc Q-band λ(max) which is generally diagnostic of improved π-orbital overlap in phthalocyanine ring systems. Annealed OBNc OTFTs have mobilities of 0.06 cm(2) V(-1) s(-1), low threshold voltages (|V(th)| < 1 V), and on/off ratios greater than 10(6). These air-stable device parameters are utilized for sensing modalities which enhance the sensitivity and selectivity of OBNc OTFTs relative to H(2)Pc OTFTs. While both sensors exhibit mobility decreases for all analytes, only OBNc OTFTs exhibit V(th) changes for highly polar/nonpolar analytes. The observed mobility decreases for both sensors are consistent with electron donation trends via hydrogen bonding by basic analytes. In contrast, V(th) changes for OBNc sensors appear to correlate with the analyte's octanol-water partition coefficient, consistent with polar molecules stabilizing charge in the organic semiconductor film. The analyte induced V(th) changes for OBNc OTFTs can be employed to develop selective multiparameter sensors which can sense analyte stabilized fixed charge in the film.     

Effect of H2O chemisorption on passivation of Ge(100) surface studied by scanning tunneling microscopy

The electronic passivation of a Ge(100) surface, via the chemisorption of H₂O at room temperature (RT), and the temperature dependence of H₂O coverage were investigated using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). With a saturation H₂O dose at RT, a highly-ordered structure, due to the dissociative chemisorption of H₂O, was observed on a Ge(100) surface with a coverage of 0.85 monolayers (ML). Annealing the room temperature H₂O-dosed Ge surface to 175 °C decreased the coverage of H₂O to 0.6 ML. Further annealing at 250 °C decreased the coverage of H₂O sites to 0.15 ML, and the surface reconstruction of Ge dimers was observed over much of the surface. Annealing above 300 °C induced Ge suboxide structures, similar to the oxygen-dosed Ge surface. STS measurements confirmed that the surface dangling bond states near Fermi energy are removed by the H₂O chemisorption because the dangling bonds of Ge atoms are terminated by ―OH and ―H. The H₂O pre-dose at room temperature provides a template for the ultrathin passivation of Ge(100) surface via atomic layer deposition (ALD) at RT, since near monolayer nucleation can be obtained with a 1/2 hydroxylated and 1/2 hydrogenated Ge surface.