The electrical properties of doped silicon,grown by Molecular-Beam-Epitaxy (MBE)

Measurements of the Hall coefficients and of the resistivity of MBE-grown Si, doped with P, As, Sb, B, and Ga in the concentration range 10¹⁴ to 10²⁰ cm^–3, were carried out at 77 K and at 300 K. With the exception of Ga-doped Si, the measured mobilities were close to or higher than those of bulk materials at both temperatures. The Mott metal/non-metal transition has been observed in the present epitaxial materials and the measured values for the critical impurity concentration at which the transition occurs, agree with values reported by other workers for bulk silicon.     

End-point detection in potentiometric titration by continuous wavelet transform

The aim of this work was construction of the new wavelet function and verification that a continuous wavelet transform with a specially defined dedicated mother wavelet is a useful tool for precise detection of end-point in a potentiometric titration. The proposed algorithm does not require any initial information about the nature or the type of analyte and/or the shape of the titration curve. The signal imperfection, as well as random noise or spikes has no influence on the operation of the procedure.The optimization of the new algorithm was done using simulated curves and next experimental data were considered. In the case of well-shaped and noise-free titration data, the proposed method gives the same accuracy and precision as commonly used algorithms. But, in the case of noisy or badly shaped curves, the presented approach works good (relative error mainly below 2% and coefficients of variability below 5%) while traditional procedures fail. Therefore, the proposed algorithm may be useful in interpretation of the experimental data and also in automation of the typical titration analysis, specially in the case when random noise interfere with analytical signal.     

Inter- or intramolecular electron transfer between triruthenium clusters: we’ll cross that bridge when we come to it

The purpose of this review is to examine the fundamental differences between intermolecular self-exchange vs. intramolecular ET in mixed-valence complexes based on similar triruthenium structural units. The role of orbital overlap between ancillary ligands of the electron donor and acceptor are considered in self-exchange reactions which are found to be strongly adiabatic and again in bridged mixed-valence systems. The method of infrared (IR) reflectance spectroelectrochemistry for the determination of extremely fast (10¹¹–10¹³ s^?1) ET rate constants is reviewed as a tool to provide quantitative information about the time scales of localization and delocalization. The role of internal vibrations of the bridging ligand in strongly delocalized mixed-valence ions is investigated by resonance Raman and IR spectroscopies. The role of solvent dipolar relaxation times in determining the rates of ultrafast intramolecular ET reactions is reviewed in the context of inorganic mixed-valence chemistry. Finally, the concept of Robin–Day Class II/III “borderline” complexes is considered, and a concise definition of the localized to delocalized transition is provided in terms of the relative contributions of external solvent and internal complex ion vibrational modes to ET.     

A note on Cesàro-Orlicz sequence spaces

The condition δ₂ in Cesàro-Orlicz sequence spaces equipped with the Luxemburg norm is discussed. The comparison theorem for these spaces is presented. Some counterexamples are provided.