Metallic films forming on the surface of alkali-halide crystals during thermal diffusion of intracrystalline immpurities

It was detected for the first time that films consisting of a transition-metal-based structure form (via thermal diffusion of intracrystalline impurities) on the surface of alkali-halide (LiF, NaF) crystals activated by transition metals Co, Ni, or Mn. The thickness, density, and composition of the films are shown to be different, depending on the heat treatment conditions. The crystals were annealed at temperatures varying from 473 to 1073 K in vacuum and air. The surface structures forming upon annealing in vacuum exhibit magnetic properties. The films were studied by optical, x-ray fluorescence, and electron spectroscopy to reveal the mechanisms of transition-metal film formation during thermal annealing.     

Localising gravity in composite monopole brane worlds without bulk cosmological constant

We study a 7-dimensional brane world scenario with a Ricci-flat 3-brane residing in the core of a composite monopole defect, i.e., a defect composed of a 't Hooft–Polyakov and a global monopole. Admitting a direct interaction between the two bosonic sectors of the theory, we analyse the structure of the space–time in the limits of small, respectively large direct interaction coupling constant. For large direct interaction, the global monopole disappears from the system and leaves behind a negative cosmological constant in the bulk such that gravity-localising solutions are possible without a priori introduction of a bulk cosmological constant.     

High-quality InAlN/GaN heterostructures grown by metal–organic vapor phase epitaxy

We fabricated high-quality InAlN/GaN heterostructures by metal–organic vapor phase epitaxy (MOVPE). X-ray diffraction measurements revealed that InAlN/GaN heterostructures grown under optimal conditions have flat surfaces and abrupt heterointerfaces. Electron mobility from 1200 to 2000 cm²/V s was obtained at room temperature. To our knowledge, this mobility is the highest ever reported for InAlN/GaN heterostructures. We also investigated the relationship between the Al composition and sheet electron density (N_s) for the first time. N_s increased from 1.0×10¹² to 2.7×10¹³ cm⁻² when the Al composition increased from 0.78 to 0.89.     

Fatty acid binding site of mitochondrial uncoupling protein UCP2 as probed by EPR spectroscopy of spin-labeled fatty acids

Electron paramagnetic resonance (EPR) spectroscopy of spin-labeled fatty acids was used to investigate their interaction withEscherichia coli-expressed human mitochondrial uncoupling protein UCP2 refolded from inclusion bodies in nonaethylene glycol monododecyl ether (C₁₂E₉) micelles. 5-DOXYL-stearic acid and 4-PROXYL-palmitic acid bound to UCP2 exhibited additional clearly separated h_+1I, h_?1I “immobile” peaks in the low- and high-field region, respectively, separated by 42 and 44 Gauss, and extensively reduced h_+1M, h_?1M “mobile” peaks, separated by about 30 G, whereas with 7-DOXYL-stearic acid the I and M peaks were smoothed together into one wide peak. Competition of 4-PROXYL-palmitic acid with added palmitic acid, arachidonic acid, and all-cis-8,11,14-eicosatrienoic acid and of 7-DOXYL-stearic acid with arachidonic acid was indicated by the disappearance of the h_+1I, h_?1I “immobile” peaks, whereas redistribution in micelles without protein was indicated by the rising of the h_+1M, h_?1M “mobile” peaks. In conclusion, a competition of palmitic, arachidonic, and eicosatrienoic acid within a putative fatty acid binding site was observed for mitochondrial uncoupling protein UCP2. This finding together with the observation of EPR spectra of highly immobilized probes exclusively in the presence of the recombinant UCP2 suggest the existence of a fatty acid binding site on UCP2 which is a prerequisite of the fatty acid cycling mechanism as previously postulated for UCP1.     

Efficient multi and single line atomic fluorine lasers

Intense multi- and single-line laser operation is reported from semiconductively preionised atomic fluorine lasers employing an optimised capacitor transfer excitation circuitry. The performance and spectral characteristics of these lasers are discussed and compared to the characteristics of previously described atomic fluorine lasers. The efficiency of one of these lasers described, at optimum conditions, is reaching a value as high as 0.14%. To the best of our knowledge, this is the highest efficiency reported up date, for an atomic fluorine laser.