On formal integration in composition rings of polynomials

This author wants to express his thanks to the School of Information Engineering at Teesside Polytechnic, Middlesbrough, England, for its support and hospitality during a visiting appointment of 3 months in 1989, when this paper was written.     

Analysis of semiconducting materials by high-resolution radiofrequency glow discharge mass spectrometry

The analytical capabilities of a high-resolution mass spectrometer in combination with a 13.56 MHz glow discharge ion source for the analysis of semiconducting materials (silicon carbide and gallium arsenide) were studied. It was shown that single positively charged ions of sample material have about 10 eV higher average energy than the ions of the discharge and residual gas. Therefore effective energy separation of the ions of analyte from the ions of the discharge and residual gas was achieved by adjusting the ion transfer optics (breadth and position of energy slit), which improves the analytical capabilities of the developed method.Some analytical applications are presented to illustrate the performance of r.f. GDMS for the bulk analysis of semiconducting materials. The results of the trace element analysis of gallium arsenide and silicon carbide samples are compared with data of independent methods (LIMS, ICP-AES, SIMS).Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthdayOn leave from the Institute of Inorganic Chemistry, 630090 Novosibirsk, Russia     

Sigma Models and Minimal Surfaces

Correspondence is established between sigma models, minimal surfaces and the Monge–Ampére equation. The Lax pairs of the minimality condition of the minimal surfaces and the Monge–Ampére equations are given. Existence of infinitely many nonlocal conservation laws is shown and some Bäcklund transformations are also given.     

Erratum: Synthesis and characterization of diorganotin(IV) complexes of Schiff bases with ONO‐type donors and crystal structure of [N‐(2‐hydroxy‐4‐nitrophenyl)‐3‐ethoxysalicylideneiminato]diphenyltin(IV)

The article referenced above was first published online on 30 August 2007 with incorrect pagination; the pagination has now been corrected online and in print. Copyright © 2007 John Wiley & Sons, Ltd.     

Norms on unitizations of banach algebras revisited

Let A be an algebra without unit. If ∥ ∥ is a complete regular norm on A it is known that among the regular extensions of ∥ ∥ to the unitization of A there exists a minimal (operator extension) and maximal (ℓ₁-extension) which are known to be equivalent. We shall show that the best upper bound for the ratio of these two extensions is exactly 3. This improves the results represented by A. K. Gaur and Z. V. Kovářík and later by T. W. Palmer. The second author was partially supported by the grant No. 201/03/0041 of GAČR.     

Application of N,N‐bis(diphenylphosphino)aniline palladium(II) complexes as pre‐catalysts in Heck coupling reactions

Palladium(II) complexes with N,N‐bis(diphenylphosphino)aniline ligands catalyse the Heck reaction between styrene and aryl bromides, affording stilbenes in good yield. The structures of two of the complexes used as pre‐catalysts have been determined by single‐crystal X‐ray diffraction. Copyright © 2007 John Wiley & Sons, Ltd.     

Solid-State Thin-Film Sensors Based on Chalcogenide Materials Obtained by Planar Technology and Pulsed Laser Deposition

Methods of silicon planar technology and pulsed laser deposition were applied to fabricate fully solid-state chemical sensors for determining ions of copper, lead, cadmium, thallium, and also sulfide and chloride ions on the basis of thin chalcogenide films as ion-sensitive membranes.