Advances in nanomagnetism via X-ray techniques

This report examines the current status and the future directions of the field of nanomagnetism and assesses the ability of hard X-ray synchrotron facilities to provide new capabilities for making advances in this field. The report first identifies major research challenges that lie ahead in three broadly defined subfields of nanomagnetism: confined systems, clusters and complex oxides. It then examines the relevant experimental capabilities that are currently available at hard X-ray synchrotron light sources, using the Advanced Photon Source (APS) at Argonne as an example. Finally, recommendations are made for future development in X-ray facilities that will enhance the study of nanomagnetism, including new experimental directions, modifications that would enable in situ sample preparation, and measurements at high magnetic fields and/or low temperatures. In particular, in situ sample preparation is of high priority in many experiments, especially those in the area of surface magnetism.     

Modified magnetism at a buried Co/Pd interface resolved with X-ray standing waves

Soft x-ray standing waves produced by a multilayer interference substrate add depth sensitivity to magnetic circular dichroism to resolve changes in Co magnetism across a 1 nm distance from the Co center to the Co-on-Pd interface of a Pd/Co/Pd trilayer with an in-plane magnetization. Large enhancements of the number of Co d holes, and of in-plane orbital and spin magnetic moments, are strongly localized at a thin, chemically modified interface layer. These results provide new insight into magnetic anisotropy at interfaces, and suggest a broad applicability of such standing wave measurements to interface magnetism studies.     

Bonding, backbonding, and spin-polarized molecular orbitals: basis for magnetism and semiconducting transport in V[TCNE]x approximately 2

X-ray absorption spectroscopy (XAS) and magnetic circular dichroism (MCD) at the V L{2,3} and C and N K edges reveal bonding and backbonding interactions in films of the 400 K magnetic semiconductor V[TCNE]x approximately 2. In V spectra, d{xy}-like orbitals are modeled assuming V2+ in an octahedral ligand field, while d{z{2}} and d{x{2}-y{2}} orbitals involved in strong covalent sigma bonding cannot be modeled by atomic calculations. C and N MCD, and differences in XAS from neutral TCNE molecules, reveal spin-polarized molecular orbitals in V[TCNE]x approximately 2 associated with weaker pi bonding interactions that yield its novel properties.     

Quasistatic x-ray speckle metrology of microscopic magnetic return-point memory

We have used coherent, resonant, x-ray magnetic speckle patterns to measure the statistical evolution of the microscopic magnetic domains in perpendicular magnetic films as a function of the applied magnetic field. Our work constitutes the first direct, ensemble-averaged study of microscopic magnetic return-point memory, and demonstrates the profound impact of interfacial roughness on this phenomenon. At low fields, the microscopic magnetic domains forget their past history with an exponential field dependence.     

Trennung des Thoriums von den seltenen Erden der Cer- und Yttriumgruppe durch stickstoffwasserstoffsaures Kalium

Ohne Zusammenfassung     

Depth profile of uncompensated spins in an exchange bias system

We have used the unique spatial sensitivity of polarized neutron and soft x-ray beams in reflection geometry to measure the depth dependence of magnetization across the interface between a ferromagnet and an antiferromagnet. The net uncompensated magnetization near the interface responds to applied field, while uncompensated spins in the antiferromagnet bulk are pinned, thus providing a means to establish exchange bias.     

Disorder-induced microscopic magnetic memory

Using coherent x-ray speckle metrology, we have measured the influence of disorder on major loop return point memory (RPM) and complementary point memory (CPM) for a series of perpendicular anisotropy Co/Pt multilayer films. In the low disorder limit, the domain structures show no memory with field cycling--no RPM and no CPM. With increasing disorder, we observe the onset and the saturation of both the RPM and the CPM. These results provide the first direct ensemble-sensitive experimental study of the effects of varying disorder on microscopic magnetic memory and are compared against the predictions of existing theories.     

Self-assembled growth of nanostructural Ge islands on bromine-passivated Si(111) surfaces at room temperature

We have deposited relatively thick (∼60 nm) Ge layers on Br-passivated Si(111) substrates by thermal evaporation under high vacuum conditions at room temperature. Ge has grown in a layer-plus-island mode although it is different from the Stranski-Krastanov growth mode observed in epitaxial growth. Both the islands and the layer are nanocrystalline. This appears to be a consequence of reduction of surface free energy of the Si(111) substrate by Br-passivation. The size distribution of the Ge nanoislands has been determined. The Br-Si(111) substrates were prepared by a liquid treatment, which may not produce exactly reproducible surfaces. Nevertheless, some basic features of the nanostructural island growth are reasonably reproducible, while there are variations in the details of the island size distribution.     

Suppression of near-Fermi level electronic states at the interface in a LaNiO3/SrTiO3 superlattice

Standing-wave-excited photoemission is used to study a SrTiO3/LaNiO3 superlattice. Rocking curves of core-level and valence band spectra are used to derive layer-resolved spectral functions, revealing a suppression of electronic states near the Fermi level in the multilayer as compared to bulk LaNiO3. Further analysis shows that the suppression of these states is not homogeneously distributed over the LaNiO3 layers but is more pronounced near the interfaces. Possible origins of this effect and its relationship to a previously observed metal-insulator-transition in ultrathin LaNiO3 films are discussed.