全文获取类型
收费全文 | 81篇 |
免费 | 0篇 |
专业分类
化学 | 4篇 |
晶体学 | 3篇 |
数学 | 1篇 |
物理学 | 73篇 |
出版年
2019年 | 1篇 |
2018年 | 1篇 |
2017年 | 2篇 |
2016年 | 2篇 |
2014年 | 5篇 |
2013年 | 4篇 |
2012年 | 4篇 |
2011年 | 5篇 |
2010年 | 3篇 |
2009年 | 4篇 |
2008年 | 7篇 |
2006年 | 5篇 |
2005年 | 2篇 |
2004年 | 4篇 |
2003年 | 2篇 |
2002年 | 2篇 |
2001年 | 1篇 |
2000年 | 3篇 |
1999年 | 4篇 |
1998年 | 1篇 |
1997年 | 3篇 |
1996年 | 1篇 |
1994年 | 1篇 |
1993年 | 1篇 |
1988年 | 2篇 |
1985年 | 1篇 |
1978年 | 1篇 |
1976年 | 1篇 |
1974年 | 1篇 |
1972年 | 2篇 |
1971年 | 1篇 |
1970年 | 1篇 |
1969年 | 1篇 |
1968年 | 2篇 |
排序方式: 共有81条查询结果,搜索用时 46 毫秒
71.
72.
A. N. Kislov V. G. Mazurenko K. N. Korzov V. S. Kortov 《Physics of the Solid State》2003,45(9):1780-1783
The lattice dynamics of an α-Al2O3 crystal with vacancies in various charge states is simulated using the recursive method in the shell model. The frequencies of resonant vibrations induced by defects in various directions are calculated. Characteristic features in vibrational spectra of anion-nonstoichiometric α-Al2O3 crystals, mostly associated with changes in the effective interaction between vacancies and the nearest neighbor atoms, are analyzed and explained. 相似文献
73.
74.
A.F. Zatsepin V.A. Pustovarov V.S. Kortov E.A. Buntov H.-J. Fitting 《Journal of Non》2009,355(18-21):1119-1122
In this paper we present results of a low-temperature time-resolved photoluminescence (PL) investigation of thin SiO2 films implanted with silicon ions. In addition to the luminescence of well-known ODCs, some other bands are present in the low-energy region of PL spectra that are attributed to silicon nanoclusters (quantum dots – SiQDs), excitons and hydrogen-related species (HRS). Specific features of SiQD and HRS bands are the nanosecond kinetics and unusual “stepped” PL excitation spectrum in the 3.5–7.5 eV range. The possible origin of discovered phenomena is discussed. The obtained results are interpreted taking into account the interference of exciting radiation and dimensional quantization effects. 相似文献
75.
ZnSe films were pulse-electrodeposited on conducting glass substrates with and without the addition of phosphotungstic acid.
X-ray diffraction studies indicated the formation of single phase cubic ZnSe. Addition of phosphotungstic acid resulted in
films with nanocrystallites. The band gap of the films was found to increase due to addition of phosphotungstic acid. The
films had a crystallite size of the order of 15nm and a surface roughness of 1.8nm. Laser Raman studies exhibited the LO phonon
peaks of ZnSe. The films were found to possess a slight excess of Se as evident from the energy dispersive X-ray analysis
measurements. 相似文献
76.
V. S. Kortov K. A. Sergeeva V. A. Pustovarov A. A. Rempel 《Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques》2017,11(4):727-731
The photoluminescence of Zn2SiO4:Mn2+ ceramics with a particle size of 120 ± 10 nm, which is excited in the range of 3.5–5.8 eV and subjected to synchrotron radiation with photon energies of up to 20 eV, is investigated. Nanoscale Zn2SiO4:Mn2+ ceramics possesses intense luminescence with a maximum of 2.34 eV, the position and half-width of the band are independent of the excitation energy. It is found that the photoluminescence at 2.34 eV decays nonexponentially upon ultraviolet excitation. In the case of nanoscale ceramics is irradiated by vacuum ultraviolet, an additional photoluminescence-excitation channel is likely to occur due to interaction of band states and intrinsic vacancy-like defects of the Zn2SiO4 matrix. 相似文献
77.
The thermoluminescent properties of anion-defect alumina single crystals with different FWHMs of the main (dosimetric) peak at 400–500 K are studied. New experimental evidence in favor of the hole nature of traps associated with the high-temperature part of this peak are presented. The introduction of hole trap centers into analysis provided theoretical justification for the experimentally observed dependences of the thermoluminescence (TL) intensity, the temperature position of the main peak, and its FWHM on the occupancy of deep traps. The hole nature of traps of the high-temperature part of the main TL peak is confirmed by the results of examination of specific TL features of shallow trap centers, which govern TL at 350 K, and the temperature variation of the main TL peak spectrum. 相似文献
78.
A. F. Zatsepin V. S. Kortov N. V. Gavrilov D. Yu. Biryukov 《Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques》2008,2(3):450-453
The special features of optically stimulated electron emission and luminescence of defects in KV quartz glass after Cu+ ion pulse implantation are studied. It is shown that the ion-beam modification of the photoemission and luminescence properties of samples is due to the formation of radiation defects and by dimensional factors caused by the appearance of Cu nanoparticles. 相似文献
79.
A physical model and program of calculating the parameters of charging dielectrics by electron bombardment is described. A
method of computer simulation is used to investigate the main processes of charging the subsurface silicon dioxide layers.
Dependences of the current density, volume charge density, and electric field strength on the material layer depth are calculated
for variable electron beam parameters, irradiation time, and grid potential near the sample surface. 相似文献
80.
The effect of deep traps filled by a pulsed electron beam on the dosimetric thermoluminescence (TL) peak at 450 K in anion-deficient aluminum oxide single crystals has been investigated. After filling deep traps, the dosimetric TL peak becomes nonelementary and is characterized by a complex dependence of the TL intensity on the crystal annealing temperature with alternating fall and rise portions. The influence of the occupancy of deep centers of different nature and different energy depths on the structure of dosimetric TL peak is analyzed. The suggestion that basically electron traps are depleted in the temperature ranges of 600–750 and 900–1000 K while holes are depleted at T = 780–900 and above 1000 K is substantiated. The possibility of using TL deep traps for high-dose dosimetry of pulsed electron beams is demonstrated. 相似文献