Electron-beam microprobe analysis of epitaxial GaxIn1−xP solid solutions

Ga_xIn_1–xP epitaxial layers were investigated by means of a scanning electron microscope X-ray microanalyser. The conditions for quantitative X-ray microprobe analysis are discussed. The growth of Ga_xIn_1–xP layers is possible on GaP substrates with x > 0,8 and on GaAs with 0,3 < x < 0,6. For the deposition of layers with 0,5 < x < 0,8 two substrate materials are possible: GaAs_1–xP_x or Ga_xIn_1–xP with suitable compositions. These materials must be epitaxially deposited by step by step layer growth or by vapour phase epitaxy, respectively.     

Investigation of the structure and luminescence properties of CdF2-CaF2 : Eu superlattices on Si(111)

A complex investigation of CdF₂-CaF₂ : Eu superlattices with different bilayer thicknesses (2.0–17.5 nm) grown by molecular beam epitaxy on Si(111) has been carried out. The structural perfection of the layers and interfaces of the superlattices have been estimated from the X-ray diffractometry and reflectometry data. The possibility of producing short-period pseudomorphic superlattices with a period of approximately 2 nm has been established. It has been shown that these superlattices are characterized by a larger root-mean-square roughness amplitude of the interfaces as compared to the long-period superlattices. The specific features of cathodoluminescence spectra have been analyzed as a function of the superlattice period. It has been revealed that, with a decrease in the superlattice period, the intrinsic luminescence intensity of fluorides increases in comparison with the intensity of the luminescence associated with the emission of Eu²⁺ impurity ions; in this case, several Eu³⁺ luminescence bands appear in the spectrum. The possibilities of electron probe microanalysis for determining the ratio of thicknesses of individual layers in short-period superlattices have been demonstrated.     

Process of fabricating semiconductor microcavities and photon crystals

A process of fabricating microcavities and photon crystals in GaAs structures by means of electron lithography and reactive ion etching is described. Two types of structures, with micropillars and with photon crystals, are considered. The latter structures have the form of a square or hexagonal array of holes in a planar waveguiding structure. The minimal diameter of the micropillars is 100 nm, and their height is 700 nm. The size of the holes in the photon crystals and the photon crystal period are controllably varied from 140 to 500 nm and from 400 to 1000 nm, respectively. The etch depth of the crystals is more than 350 nm.     

TEM study of the structure of gallium nitride epitaxial films grown on substrates with different interface morphologies

The structure of gallium nitride epitaxial layers grown on patterned substrates was studied by transmission electron microscopy. The engraving of a substrate surface with pits or pyramids undoubtedly leads to structural improvement. The best results are obtained at a pattern density of about 10⁷ cm^?2.     

Characterization of the structure of ultradispersed diamond using X-ray diffractometry and small-angle X-ray scattering

Two samples of detonation-synthesized ultradispersed diamond have been studied using X-ray diffractometry and small-angle X-ray scattering. It has been shown based on the X-ray diffractometry data that two samples contain regions with both the diamond and graphite-like lattices. Grain radii inside both samples are evaluated from the small-angle scattering data as 30–50 nm. The samples also contain low-dimensional components. A broad Bragg peak corresponding to a set of interplanar distances from 5 to 15 nm is revealed in the small-angle scattering curve of sample no. 1. A structural model of ultradispersed diamond particles, which represents the diamond core surrounded by concentric graphite shells similar to the onionskin, is confirmed.     

Calculation of a quasi-stationary field in the layered medium

A method of calculating the field of a single point charge in a layered medium is suggested. The method makes it possible to simplify the computational formulas for the potential. The solution of the problem employs the properties of Bessel and Struve functions. The results apply to a wide class of problems solvable in terms of Green’s function.     

Stabilization of the melt composition in Ga?Al?Sb?As

In this work we present a new effect of stabilization of the Ga Al Sb As melt composition when it is in contact with the GaAs substrate. It was found that the As content in the Ga Al Sb As melt did not depend on the initial Sb concentration when the liquid phase was formed by saturating the Ga Al Sb melt from the GaAs substrate. This effect is supposed to be due to the change in phase equilibria conditions caused by large lattice mismatch between the substrate and the solid in equilibrium with the liquid.     

The influence of lattice mismatch upon defects generation and luminescent characteristics of heterostructures in the GaP-InP system

The influence of lattice mismatch and thermal stresses on the defect generation in GaAs-GaInP heterostructures was studied. The results of electron-probe, X-ray topographic and electron-microscopic investigations are presented. The comparison of X-ray diffraction and microcathodoluminescence results is done.     

Determination of the Thicknesses and Visualization of Ion-Exchange Waveguides in Glasses by Scanning Electron Microscopy

Technical Physics - The formation of a surface layer with silver and sodium concentration gradients in K8-grade glasses as a result of ion exchange is demonstrated by scanning electron microscopy...     

GaAs quantum well structures investigation by local cathodoluminescence

The article shows the cathodoluminescence technique application to a quality analysis of a semiconductor multilayer heterostructures. Two structures with a GaAs quantum well embedded between the AlGaAs and GaInP barriers were investigated. The AlGaAs/GaAs/GaInP and GaInP/GaAs/AlGaAs structures were grown by MOCVD on a GaAs substrate. In this work we study the interface quality of quantum-dimensional GaAs layer by means of the local cathodoluminescence. Degradation and broadening of GaAs/GaInP interface occurring during the growth process of GaAs on GaInP layer was assumed to result in the formation of a layer with mixed composition at the interface. In addition, the presence of the layer prevented the formation of a quantum well in the GaAs layer. The transition layer was clearly observed by the cathodoluminescence. In the other case it was found that the growth of a structure with GaAs layer on top of AlGaAs produced a quantum well with a 10 nm thickness. The interface quality and layer thicknesses were also confirmed by the X-ray diffraction investigation of these structures.