排序方式: 共有36条查询结果,搜索用时 46 毫秒
21.
. I. Alferov S. G. Konnikov V. A. Miurnyj D. M. Tret'jakov T. B. Godlinnik 《Crystal Research and Technology》1973,8(9):1029-1035
GaxIn1–xP epitaxial layers were investigated by means of a scanning electron microscope X-ray microanalyser. The conditions for quantitative X-ray microprobe analysis are discussed. The growth of GaxIn1–xP layers is possible on GaP substrates with x > 0,8 and on GaAs with 0,3 < x < 0,6. For the deposition of layers with 0,5 < x < 0,8 two substrate materials are possible: GaAs1–xPx or GaxIn1–xP with suitable compositions. These materials must be epitaxially deposited by step by step layer growth or by vapour phase epitaxy, respectively. 相似文献
22.
G. A. Valkovskiy M. V. Durnev M. V. Zamoryanskaya S. G. Konnikov A. V. Krupin A. V. Moroz N. S. Sokolov A. N. Trofimov M. A. Yagovkina 《Physics of the Solid State》2013,55(7):1498-1504
A complex investigation of CdF2-CaF2 : Eu superlattices with different bilayer thicknesses (2.0–17.5 nm) grown by molecular beam epitaxy on Si(111) has been carried out. The structural perfection of the layers and interfaces of the superlattices have been estimated from the X-ray diffractometry and reflectometry data. The possibility of producing short-period pseudomorphic superlattices with a period of approximately 2 nm has been established. It has been shown that these superlattices are characterized by a larger root-mean-square roughness amplitude of the interfaces as compared to the long-period superlattices. The specific features of cathodoluminescence spectra have been analyzed as a function of the superlattice period. It has been revealed that, with a decrease in the superlattice period, the intrinsic luminescence intensity of fluorides increases in comparison with the intensity of the luminescence associated with the emission of Eu2+ impurity ions; in this case, several Eu3+ luminescence bands appear in the spectrum. The possibilities of electron probe microanalysis for determining the ratio of thicknesses of individual layers in short-period superlattices have been demonstrated. 相似文献
23.
E. M. Arakcheeva A. V. Nashchekin V. A. Solov’ev E. M. Tanklevskaya M. V. Maksimov S. G. Konnikov S. A. Gurevich N. N. Ledentsov 《Technical Physics》2005,50(2):217-219
A process of fabricating microcavities and photon crystals in GaAs structures by means of electron lithography and reactive
ion etching is described. Two types of structures, with micropillars and with photon crystals, are considered. The latter
structures have the form of a square or hexagonal array of holes in a planar waveguiding structure. The minimal diameter of
the micropillars is 100 nm, and their height is 700 nm. The size of the holes in the photon crystals and the photon crystal
period are controllably varied from 140 to 500 nm and from 400 to 1000 nm, respectively. The etch depth of the crystals is
more than 350 nm. 相似文献
24.
A. A. Sitnikova S. G. Konnikov D. A. Kirilenko M. G. Mynbaeva M. A. Odnoblyudov V. E. Bugrov T. Lang 《Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques》2007,1(3):269-272
The structure of gallium nitride epitaxial layers grown on patterned substrates was studied by transmission electron microscopy. The engraving of a substrate surface with pits or pyramids undoubtedly leads to structural improvement. The best results are obtained at a pattern density of about 107 cm?2. 相似文献
25.
M. D. Sharkov M. E. Boiko S. N. Ivashevskaya S. G. Konnikov 《Physics of the Solid State》2014,56(11):2343-2347
Two samples of detonation-synthesized ultradispersed diamond have been studied using X-ray diffractometry and small-angle X-ray scattering. It has been shown based on the X-ray diffractometry data that two samples contain regions with both the diamond and graphite-like lattices. Grain radii inside both samples are evaluated from the small-angle scattering data as 30–50 nm. The samples also contain low-dimensional components. A broad Bragg peak corresponding to a set of interplanar distances from 5 to 15 nm is revealed in the small-angle scattering curve of sample no. 1. A structural model of ultradispersed diamond particles, which represents the diamond core surrounded by concentric graphite shells similar to the onionskin, is confirmed. 相似文献
26.
I. A. Konnikov 《Technical Physics》2007,52(4):531-533
A method of calculating the field of a single point charge in a layered medium is suggested. The method makes it possible
to simplify the computational formulas for the potential. The solution of the problem employs the properties of Bessel and
Struve functions. The results apply to a wide class of problems solvable in terms of Green’s function. 相似文献
27.
A. N. Baranov S. G. Konnikov T. B. Popova V. E. Umansky Yu. P. Yakovlev 《Crystal Research and Technology》1983,18(3):349-353
In this work we present a new effect of stabilization of the Ga Al Sb As melt composition when it is in contact with the GaAs substrate. It was found that the As content in the Ga Al Sb As melt did not depend on the initial Sb concentration when the liquid phase was formed by saturating the Ga Al Sb melt from the GaAs substrate. This effect is supposed to be due to the change in phase equilibria conditions caused by large lattice mismatch between the substrate and the solid in equilibrium with the liquid. 相似文献
28.
S. G. Konnikov T. B. Popova S. A. Ruvimov M. M. Sobolev L. M. Sorokin I. L. Shulpina V. E. Umansky 《Crystal Research and Technology》1981,16(2):169-174
The influence of lattice mismatch and thermal stresses on the defect generation in GaAs-GaInP heterostructures was studied. The results of electron-probe, X-ray topographic and electron-microscopic investigations are presented. The comparison of X-ray diffraction and microcathodoluminescence results is done. 相似文献
29.
Technical Physics - The formation of a surface layer with silver and sodium concentration gradients in K8-grade glasses as a result of ion exchange is demonstrated by scanning electron microscopy... 相似文献
30.
A.A. Shakhmin M.V. Zamoryanskaya I.N. Arsentyev S.G. Konnikov D.A. Vinokurov A.L. Stankevich I.S. Tarasov 《Superlattices and Microstructures》2009,45(4-5):376-382
The article shows the cathodoluminescence technique application to a quality analysis of a semiconductor multilayer heterostructures. Two structures with a GaAs quantum well embedded between the AlGaAs and GaInP barriers were investigated. The AlGaAs/GaAs/GaInP and GaInP/GaAs/AlGaAs structures were grown by MOCVD on a GaAs substrate. In this work we study the interface quality of quantum-dimensional GaAs layer by means of the local cathodoluminescence. Degradation and broadening of GaAs/GaInP interface occurring during the growth process of GaAs on GaInP layer was assumed to result in the formation of a layer with mixed composition at the interface. In addition, the presence of the layer prevented the formation of a quantum well in the GaAs layer. The transition layer was clearly observed by the cathodoluminescence. In the other case it was found that the growth of a structure with GaAs layer on top of AlGaAs produced a quantum well with a 10 nm thickness. The interface quality and layer thicknesses were also confirmed by the X-ray diffraction investigation of these structures. 相似文献