氢化作用对低能电子束辐照下GaN发光演变的影响

结合氢在GaN中的扩散特性,运用阴极荧光（CL）谱,对氢化前后低能电子束辐照下GaN带边发光强度的演变进行了研究.实验发现,氢化前GaN在低能电子束辐照下带边发光强度呈现衰减的趋势,而氢化后带边发射强度先上升后衰减,而且氢化后的衰减比氢化前弱.1 h辐照过程中,氢化后GaN带边发光强度的变化比氢化前要小很多.另外,实验中发现经过氢化处理的GaN在辐照后20 h内没有观察到带边发射强度的恢复.研究表明氢原子在GaN中可以钝化缺陷来增强发光,但这种钝化缺陷的作用必须通过克服高的扩散势垒来实现,而低能电子束可以 关键词： 阴极荧光 低能电子束 氢化 演变     

Growth and properties of YAlO film synthesized by RF magnetron sputtering

YAlO films are synthesized on (1 0 0)-oriented Si substrates by RF magnetron sputtering method. Al₂O₃ wafer is used as a target material, and some small pieces of Y bulk material are put on the Al₂O₃ target to synthesize YAlO films. Y composition ratio is varied from 0 to 34%. Amorphous YAlO films are characterized. An electrical resistivity as high as 3.4 × 10¹⁴ Ω-cm is achieved for the YAlO film with Y composition ratio of 10%. The dielectric constant increases with increasing Y composition ratio, and the YAlO film with Y composition ratio of 34% has a dielectric constant of 10.2. The bandgap energy of the YAlO film is suggested to be wider than 6.5 eV. YAlO films with a surface roughness of 0.4-1.3 nm are obtained irrespective of the Y composition ratio.     

Extremely low vertical-emittance beam in the accelerator test facility at KEK

Electron beams with the lowest, normalized transverse emittance recorded so far were produced and confirmed in single-bunch-mode operation of the Accelerator Test Facility at KEK. We established a tuning method of the damping ring which achieves a small vertical dispersion and small x-y orbit coupling. The vertical emittance was less than 1% of the horizontal emittance. At the zero-intensity limit, the vertical normalized emittance was less than 2.8 x 10(-8) rad m at beam energy 1.3 GeV. At high intensity, strong effects of intrabeam scattering were observed, which had been expected in view of the extremely high particle density due to the small transverse emittance.     

Analysis of Spectral Reflectance Using Normalization Method from Endoscopic Spectroscopy System

Objective assessment of gastrointestinal mucosal color is extremely important in the endoscopic diagnosis of digestive tract disease. In this paper, we propose a method to clarify the spectral characteristics of gastric and colon cancer. A large number of spectral reflectance data of mucous membrane are measured by the endoscopic spectroscopy system (ESS) in the National Cancer Center Hospital East, Kashiwa, Japan and the Department of Internal Medicine, Self-Defense Force Center Hospital, Tokyo, Japan. We assume that early cancer appears primarily in the spectral data of short wavelength, because it is usually present in a superficial cell where short wavelength light is scattered more strongly than long wavelength light. To identify the features in the short wavelength components, the spectral reflectance was divided by the reflectance of a long wavelength. We investigated the possibility of distinguishing early cancer from normal spectral data through statistical analysis, employing the projection axis as the mean difference between them. Early cancer and normal spectral data were projected on the projection axis, and the Student’s T-test was applied to evaluate the mean of the distribution between these data.     

High-resolution GaP Terahertz Spectrometer and Its Application to Detect Defects in Gamma-irradiated Glucose Crystal

We developed high-resolution GaP THz signal generator using Cr:Forsterite lasers with gratings as both a pump and a signal beam for difference-frequency generation. A line width of less than 500 MHz and a wide tunable frequency range (0.6–6.2 THz) provide sufficient resolution for measuring materials with sharp absorption bands using the generator as the light source for a THz spectrometer. This is suitable for materials such as gases or solid samples at low temperatures. We demonstrated the detection of defects in organic materials, as they appear as slight deviations in the absorption frequency in the THz region.     

Massless and quantized modes of kinks in the phase space of superconducting gaps

We investigated quantized modes of kinks in the phase space of superconducting gaps in a superconductor with multiple gaps. The kink is described by the sine-Gordon model in a two-gap superconductor and by the double sine-Gordon model in a three-gap superconductor. A fractional-flux vortex exists at the edge of the kink, and a fractional-flux vortex will be stable in a three-gap superconductor with time-reversal symmetry breaking. The kink and fractional-flux vortex exhibit massless modes as a sliding motion. We show further that there are one zero-energy mode (massless mode) and quantized excitation modes in kinks, which are characteristic features of multi-gap superconductors. The equation of quantized modes for the double sine-Gordon model is solved numerically. The correction to the ground-state energy is calculated based on the renormalization theory.     

Photoluminescence of (Ba1−xEux)Si6N8O (0.005≤x≤0.2) phosphors

Eu²⁺-doped BaSi₆N₈O phosphors (Ba_1−xEu_xSi₆N₈O, 0.005≤x≤0.2) were synthesized by gas-pressure sintering of the powder mixture of BaCO₃, Si₃N₄, and Eu₂O₃ at 1750 °C under 0.5 MPa N₂. The fired powder consists of a major BaSi₆N₈O phase and a trace amount of impurity phases. The structural result of the BaSi₆N₈O powder, refined by the Rietveld method, agrees well with that of single crystals. A wide blue luminescence band peaking at about 500 nm is observed in BaSi₆N₈O:Eu²⁺, upon excitation with the ultraviolet light of 310 nm. Although Eu is covalently bonded to six nearest neighbor nitrogen atoms, the luminescence of Eu²⁺ is not significantly redshifted but shows a very narrow excitation spectrum at high energies. The origin of the short-wavelength luminescence is mainly ascribed to a small crystal-field splitting as a result of extremely long distances between europium and nitrogen ligands in BaSi₆N₈O:Eu²⁺.     

Thermal stability of ZnO thin film prepared by RF-magnetron sputtering evaluated by thermal desorption spectroscopy

Thermal stability of sputter deposited ZnO thin films was evaluated by thermal desorption spectroscopy (TDS). Desorption of Zn was mainly observed from the films deposited at low O₂/Ar gas ratio and low RF power. In contrast, O₂ desorption was mainly observed from the films deposited at high O₂/Ar gas ratio and high RF power. The amount of desorbed O₂ from the film increased with increasing the O₂/Ar gas flow ratio and the RF power. Furthermore, the desorption temperature of O₂ increased with increasing the RF power during the deposition. Thermal stability of the ZnO films was controlled not only by the O₂/Ar gas flow ratio, but also applied RF power to the target.     

Characterization of Si-added aluminum oxide (AlSiO) films for power devices

Synthesis of Si-added aluminum oxide (AlSiO) films is attempted as an insulating film with both a wide bandgap and a high dielectric constant. Electrical characteristics of AlSiO films are investigated. Leakage current of the AlO film is suppressed by Si addition and is minimized with Si composition ratio of 12%. Capacitance versus voltage (C-V) measurements are carried out for Au/AlSiO/Si MIS structure. Both flat band shift and hysteresis of the C-V characteristics are suppressed by Si addition. A low leakage current is demonstrated for Au/AlSiO/n-SiC MIS structure.