Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GalnNAs/GaAs Single Quantum Well Laser Diode

Temperature stability of the threshold current and the lasing wavelength is investigated in a 1.3-μm GaInNAs/ GaAs single quantum-well laser. The measured characteristic-temperature was 88 K. The small wavelength shift per change in temperature of 0.35 nm/°C was obtained, indicating the superior lasing-wavelength stability. Therefore, it is shown experimentally that GaInNAs is very promising material for the fabrication of light source with excellent high-temperature performance for optical fiber communications.     

Bit-rate Flexible Picosecond Pulse Width Conversion with All-optical Mono-stable Multivibrator Laser Diode

An optical mono-stable multivibrator laser diode (MM-LD) is realized by using a multi-electrode distributed feedback laser diode. All-optical pulse-width conversion of ultra-short pulses to non-return-to-zero (NRZ) is achieved using an MM-LD. The MM-LD is adopted for a wide range of bit-rates between 2-10 Gbit/s by tuning the DC bias. Data format transformation from 10-Gbit/s return-to-zero optical signals to NRZ optical-signals is achieved with error free operation. Converted optical signals, which have a narrower spectral bandwidth and lower peak power than when input, are transmitted using a 1.3-μm zero dispersion fiber (1.3Aλ₀-SMF).     

Decay Time of 2.09 eV Luminescence of S2--Vacancy Centers and Their Optical and Thermal Stability in NaCl:S2 Crystals

An investigation was carried out on decay time of the 2.09 eV emission of S²–vacancy pair centers in NaCl crystals. When the crystal was excited by a pulsed 337 nm light from an N₂ laser, the 2.09 eV yellow luminescence principally decayed with the lifetime of 14.2 μs at low temperatures, and exhibited a weak thermal quenching with an activation energy of 51.3 meV above about 150 K. Such S^2--vacancy pair centers responsible for the 2.09 eV luminescence were thermally stable at room temperature, and not bleached even when exposed to ultraviolet lights below about 5 eV. Thus, the 2.09 eV emission center possibly can be used as a solid-state laser active center working at room temperature.     

Excitation of Intra-4f Shell Luminescence of Rare Earth Ions (Er3+ and Yb3+) by the Energy Transfer from Si Nanocrystals

Photoluminescence (PL) properties of SiO₂ films containing Si nanocrystals (nc-Si) and Er³⁺ (Yb³⁺) were studied. PL peaks attributable to the recombination of electron–hole pairs in nc-Si (1.5eV) and the intra-4f shell transition of Er³⁺ (0.81eV) (Yb³⁺ (1.26eV)) were observed simultaneously at room temperature. Correlation of the two peaks was studied as a function of nanocrystalline size. It was found that the intensity of the Er³⁺-related (Yb³⁺-related) peak increases drastically as the size of nc-Si decreases. Temperature dependence of PL spectra was studied. In the case of Yb-doped samples, temperature quenching of the PL became small as the size decreased, while in the case of Er-doped samples, no remarkable temperature dependence was observed. Two major features of the quantum size effects of nc-Si, i.e., the band-gap widening and the increase in the PL efficiency with decreasing the size, are thought to contribute to the improvement of room temperature PL efficiency of Er³⁺ (Yb³⁺).     

Aerial imaging steganography method for aerial imaging by retro-reflection with dual acrylic ball

Optical Review - This paper proposes a novel steganography method to show an aerial image that is formed with aerial imaging by retro-reflection by use of dual transparent balls made of acrylic...     

Theoretical study of resonant tunneling in rectangular double-, triple-, quadruple-, and quintuple-barrier structures

The transmission coefficient and the resonance condition in the one-dimensional rectangular double-, triple-, quadruple-, and quintuple-barrier structures are derived theoretically under the assumption of the constant tunneling effective mass. It is found that the resonance energies are different from the eigenvalues in the quantum well due to coupling between wells in the multiple-barrier (much more than triple-barrier) structures. It is confirmed that the transmission spectrum is a Lorentzian near to energies of resonance.     

Evolution of the Kondo effect in a quantum dot probed by shot noise

We measure the current and shot noise in a quantum dot in the Kondo regime to address the nonequilibrium properties of the Kondo effect. By systematically tuning the temperature and gate voltages to define the level positions in the quantum dot, we observe an enhancement of the shot noise as temperature decreases below the Kondo temperature, which indicates that the two-particle scattering process grows as the Kondo state evolves. Below the Kondo temperature, the Fano factor defined at finite temperature is found to exceed the expected value of unity from the noninteracting model, reaching 1.8±0.2.     

Electro‐optic switching with liquid crystal graphene

Graphene oxide (GO) particles in aqueous dispersions can form liquid crystal (LC) phases at extremely low concentrations due to the extremely high aspect ratio of the flakes and noticeably, they possess an extremely large Kerr coefficient attractive for low power consumption electro‐optic devices. Reduced graphene does not easily form LC phases in water due to its hydrophobic nature but here we show that stable dispersions of reduced graphene oxide can be realized with surfactants and that they exhibit birefringence upon shearing as well as under application of electric fields. The performance of the system is largely superior to GO LC possessing longer time stability and drastically improved electro‐optic properties with an induced birefringence twice as large at the same field strength thanks to the almost recovery of graphene properties upon reduction. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)