首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   229篇
  免费   4篇
  国内免费   3篇
化学   70篇
晶体学   4篇
力学   1篇
数学   34篇
物理学   127篇
  2022年   3篇
  2020年   1篇
  2019年   5篇
  2018年   2篇
  2017年   4篇
  2016年   4篇
  2015年   6篇
  2014年   10篇
  2013年   18篇
  2012年   15篇
  2011年   5篇
  2010年   10篇
  2009年   15篇
  2008年   12篇
  2007年   9篇
  2006年   10篇
  2005年   8篇
  2004年   8篇
  2003年   8篇
  2002年   5篇
  2001年   4篇
  2000年   2篇
  1999年   3篇
  1998年   3篇
  1997年   5篇
  1996年   2篇
  1995年   4篇
  1994年   1篇
  1993年   2篇
  1992年   5篇
  1991年   4篇
  1990年   4篇
  1989年   1篇
  1987年   4篇
  1985年   1篇
  1984年   2篇
  1983年   2篇
  1982年   1篇
  1981年   8篇
  1980年   6篇
  1979年   1篇
  1978年   4篇
  1977年   3篇
  1976年   2篇
  1974年   1篇
  1973年   2篇
  1972年   1篇
排序方式: 共有236条查询结果,搜索用时 296 毫秒
21.
La0.67Ba0.33MnO3 (LBMO) thin film is deposited on a 36.7°C SrTiO3 bicrystal substrate using laser ablation technique. A microbridge is created across bicrystal grain boundary and its characteristics are compared with a microbridge on the LBMO film having no grain boundary. Presence of grain boundary exhibits substantial magnetoresistance ratio (MRR) in the low field and low temperature region. Bicrystal grain boundary contribution in MRR disappears at temperature T>175 K. At low temperature, I-V characteristic of the microbridge across bicrystal grain boundary is nonlinear. Analysis of temperature dependence of dynamic conductance-voltage characteristics of the bicrystal grain boundary indicates that at low temperatures (T<175 K) carrier transport across the grain boundary in LBMO film is dominated by inelastic tunneling via pairs of manganese atoms and tunneling through disordered oxides. At higher temperatures (T>175 K), magnetic scattering process is dominating. Decrease of bicrystal grain boundary contribution in magnetoresistance with the increase in temperature is due to enhanced spin-flip scattering process.  相似文献   
22.
RF SQUID behaviour has been observed at 77 K in YBaCuO thick films prepared by screen printing technique. A hole shunted with a microbridge type of geometry is patterned manually for observing rf SQUID behaviour. Flux noise spectrum is also studied and it is found to depend on the quality of the film. The spectral density of the flux noise in the white noise region is 1.7×10−3 Φ0/√Hz at 77 K.  相似文献   
23.
We consider linear representations of the Galois groups of number fields in two different characteristics and examine conditions under which they arise simultaneously from a motive.  相似文献   
24.
We study the multiplicity with which 2-dimensional modp Galois representations occur in Jacobians of modular curves.  相似文献   
25.
We show that the first order QCD correction to the leptonic decay rate of heavy quark-antiquark3 D 1 bound state is identical to that for a3 S 1 state. Some phenomenological implications of this suppression are also discussed.  相似文献   
26.
U. Buck  V. Khare 《Chemical physics》1977,26(2):215-221
Total differential cross sections for collision between linear molecules and atoms are formulated and calculated in the framework of several approximations in the sudden limit in order to establish a practical method for a comparison with measured molecular beam data. The two extreme methods, the infinite order sudden and the first order linear trajectory approximation give results which differ by more than a factor of two in the anisotropy parameter. The origin of this difference lies mainly in the use of the linear trajectory. The infinite or first order treatment and the fixed or variable angle between the molecular axis and the atom during the collisions which are valid for the approximation, respectively, are only of minor influence on the result.  相似文献   
27.
We use the formalism of supersymmetric quantum mechanics to enlarge considerably the limited class of analytically solvable one-dimensional periodic potentials. In particular, we derive and discuss the energy-band structure of the Lamé potentials pm sn2 (x, m) and associated Lamé potentials pm sn2 (x, m) + qm cn2(x, m)/dn2 (x, m), both of which involve Jacobi elliptic functions with modulus parameter m. We find several new analytic expressions for band-edge energies and wave functions. The supersymmetric partners of Lamé and associated Lamé potentials constitute even more new solvable potentials with exactly the same energy-band structure.  相似文献   
28.
We discuss in detail the parasupersymmetric quantum mechanics of arbitrary order where the parasupersymmetry is between the normal bosons and those corresponding to the truncated harmonic oscillator. We show that even though the parasusy algebra is different from that of the usual parasusy quantum mechanics, still the consequences of the two are identical. We further show that the parasupersymmetric quantum mechanics of arbitrary orderp can also be rewritten in terms ofp supercharges (i.e. all of which obeyQ i 2 =0). However, the Hamiltonian cannot be expressed in a simple form in terms of thep supercharges except in a special case. A model of conformal parasupersymmetry is also discussed and it is shown that in this case, thep supercharges, thep conformal supercharges along with HamiltonianH, conformal generatorK and dilatation generatorD form a closed algebra.  相似文献   
29.
30.
CC and l-average CS calculations of degeneracy averaged differential cross sections and Δm-integral cross sections have been performed for Hez.sbndCO at E = 60 cm?1 and E = 80 cm?1, for HDz.sbndNe at E = 254 cm?1, and for Hez.sbndH2 at E = 1520 cm?1. The lavz.sbndCS degeneracy averaged differential cross sections are generally in good agreement with the CC cross sections. The previously observed shifts in the diffraction oscillations for odd rotationally inelastic transitions for Hez.sbndCO and HDz.sbndNe do not occur due to proper phase choice and l? = lav choice rather than l? = 1 or l′. The lavz.sbndCS approximation gives reliable results for most Δm-integral cross sections except for those σcs(jm, jm′) cross sections for which the CC cross sections σ(jm;jm′) and σ(jm′;jm) differ by a large amount.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号