二次型复折射率介质中的光导现象

本文讨论了n(z,r)=n_0(z)+n_2(z)r~2/r_e~2型复折射率介质中的激光传输问题,给出了激光传输参数(光束半径和波阵面曲率)的演化公式。指出只要存在一定大小的n_(21),在传输过一段特征距离z_c之后,将出现完全光导(即自相似模的传播),而且自相似模是激光体系的特征模式。其传输参数只与n_2有关,而与激光初始参数无关。自相似模必定是高斯球面波,而不是高斯平面波。     

Sub-nanosecond silicon-on-insulator optical micro-ring switch with low crosstalk

<正>We demonstrate a sub-nanosecond electro-optical switch with low crosstalk in a silicon-on-insulator(SOI) dual-coupled micro-ring embedded with p-i-n diodes.A crosstalk of -23 dB is obtained in the 20-μm-radius micro-ring with the well-designing asymmetric dual-coupling structure.By optimizations of the doping profiles and the fabrication processes,the sub-nanosecond switch-on/off time of400 ps is finally realized under an electrical pre-emphasized driving signal.This compact and fast-response micro-ring switch,which can be fabricated by complementary metal oxide semiconductor(CMOS) compatible technologies,have enormous potential in optical interconnects of multicore networks-on-chip.     

诺氟沙星与DNA的拉曼光谱研究

报道了诺氟沙星(NFX)及诺氟沙星胶囊内容物的FT-Raman光谱和在银胶基底上的表面增强拉曼光谱(SERS),归属了各个振动;研究了诺氟沙星与DNA的相互作用的SERS,结果表明:胶囊内容物的拉曼光谱图与对照品的拉曼光谱图的特征振动峰:C-F键的伸缩振动,C=C伸缩振动,O-C-O的对称伸缩振动峰值未发生变化,发生变化主要是分子骨架振动峰,诺氟沙星胶囊的辅料对拉曼光谱无实质影响,可建立拉曼光谱法检测诺氟沙星药物的分析方法;诺氟沙星可以在没有金属离子的存在下与DNA直接作用,与DNA相互作用的主要键合模式是插入作用,NFX分子中的平面结构插入DNA的双螺旋碱基平面,为深入了解喹诺酮类抗生素的抗菌机理提供可靠依据.     

矿化剂对铝酸钙粉的结构与光谱性能的影响

研究了矿化剂对制备铝酸钙粉的结构与性能的影响.研究中以铝矾土和石灰石为原料,加入一定量的矿化剂,混合均匀,经高温煅烧制得铝酸钙粉.借助于红外光谱、X射线粉末衍射、差热-热重分析等手段对不同原料的铝酸钙粉的结构、组成及性能进行了表征和研究,并对矿化剂在合成铝酸钙中的矿化机理进行探讨.研究表明:加入矿化剂后,可在更低温度条件下煅烧制备出铝酸钙粉,有利于节能减排.红外光谱分析、XRD分析、DTA-TG分析显示:未加矿化剂煅烧时,生成的产物主要是Ca3Al10O18,CaAl2Si2O8.加入矿化剂后煅烧生成的产物主要是易浸出Al2O3的CaAl3BO7和Ca3Al10O18,而不易浸出Al2O3的CaAl2Si2O8的含量大大降低.同时显示,加入矿化剂后,原料中的方解石(CaCO3)分解更容易;CaCO3与铝矾土反应更充分;更有利于促使铝矾土中的Al-Si键断裂,将铝矾土中的Al释放出来;并可降低铝酸钙的煅烧温度.研究还显示:加入矿化剂后,可以改变原产物的晶体结构与成分,有利于降低煅烧反应温度.     

庆大霉素与水溶性CdTe量子点的荧光共振能量转移作用

以巯基丙酸(mercaptopropionic acid,MPA)为稳定剂合成水溶性CdTe最子点(quantum dots,QDs),以CdTe QDs作为能量供体.庆大霉素(Gentamycin,GT)作为能垦受体,建立了荧光共振能量转移(fluorescence resonance energy transfer,FRET)体系.在690 nm处可见发射峰,半峰宽约10 nm,在一定范围内荧光强度与GT的含量旱线性关系,线性范围为2～20 mg·L-1,相关系数r=0.986 7.优化了不同的激发波长、pH、离子强度、时间和温度等凼素对反应的影响,并应用傅里叶变换红外光谱(Fourier transform infrared spectroscopy,FTIR)和高效液相色谱(high-performance liquid chromatography,HPLC)分别表征了化学结构和相对专一性.结果表明巯基丙酸的巯基中S原子和羧基中氧原子与纳米微粒表面的富Cd离子发生了配位作用,CdTe QDs与GT的耦合主要是通过量子点周围巯基丙酸羧基(-COOH)中的氧原子与GT的胺基(-NH2)形成分子问氧键实现的;GT与CdTe QDs的结合率为0.35:1.研究表明GT可以作为检测CdTe QDs标记牛血清白蛋白(bovine serum albumin,BSA)的荧光增敏剂,荧光强度值增强6倍,应用前景广阔.     

ICP等离子体鞘层附近区域发光光谱特性分析

为了独立控制鞘层附近区域离子密度和离子能最分布,采用光发射谱(OES)测量技术,对不同射频功率、放电气压和基底偏压下感应耦合等离子体鞘层附近区域辉光特性进行了研究.原子谱线和离子谱线特性分析表明,在鞘层附近区域感应耦合等离子体具有较高的离子密度和较低的电子温度.改变放电气压和射频功率,对得到的光谱特性分析表明,鞘层附近区域离子密度随射频功率的增大而线性增大,在低压下随气压的升高而增大.低激发电位原子谱线强度增加迅速,高激发电位原子谱线强度增加缓慢,而离子谱线强度增加很不明显.改变基底直流偏压,对得到的发射光谱强度变化分析表明,谱线强度随基底正偏压的增加而增大.随着基底负偏压的加入,谱线强度先减小而后增大;直流偏压为-30 V时,光谱强度最弱.快速离子和电子是引起Ar激发和电离过程的主要能量来源.     

Precision position measurement of single atom

Atom localization in a five-level atomic system under the effect of three driving fields and one standing wave field is suggested. A spontaneously emitted photon from the proposed system is measured in a detector. Precision position measurement of an atom is controlled via phase and vacuum field detuning without considering the parity violation.     

Primary result of ~(236)U measurement with accelerator mass spectrometry at CIAE

The rare isotope 236U has a half-life of 2.342(3)×107 years,and is produced principally by thermal neutron capture on 235U.The isotopic atom ratio of 236U/238U depends on the integral thermal neutron flux received by the material of interest.236U is potentially useful as a fingerprint for indicating the presence of neutron-irradiated uranium usually originating from nuclear activity.By extracting negative molecular ion UO- from the uranium oxide target,simulating the 236U16O- beam transport with 238U16O- an...     

Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire

Al x Ga 1-x N/GaN high-electron-mobility transistor (HEMT) structures with Al composition ranging from x = 0.13 to 0.36 are grown on sapphire substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The effects of Al content on crystal quality, surface morphology, optical and electrical characteristics of the AlGaN/GaN heterostructures have been analyzed. Although high Al-content (36%) heterostructure exhibits a distinguished photoluminescence peak related to recombination between the two-dimensional electron gas and photoexcited holes (2DEG-h), its crystal quality and rough surface morphology are poor. 2DEG mobility increases with the Al content up to 26% and then it apparently decreases for high Al-content (36%) AlGaN/GaN heterostructure. The increase of sheet carrier density with the increase of Al content has been observed. A high mobility at room temperature of 2105 cm 2 /V s with a sheet carrier density of n s = 1.10 × 10 13 cm -2 , for a 26% Al-content AlGaN/GaN heterostructure has been obtained, which is approaching state-of-the-art for HEMT grown on SiC. Sheet resistance as low as 274 Ω/□ has also been achieved.     

Simulation of growing GaN in vertical HVPE reactor

The paper reports the setting up of a model of fluid dynamic for GaN HVPE system and the simulation. It is found that when the direction of gravity is opposite to the direction of GaCl flow inlet,there exits a distance at which the uniformity of the deposition is optimal. Here the good uniformity of the deposition is obtained when the distance between the substrate and GaCl inlet is 5 cm. The parameters of gas flow used in growing GaN are also optimized. In addition, the influence of gravity and buoyancy on...