High density excitons in tracks of energetic charged particles in CuCl

The luminescence induced by heavy charged particle irradiation has been measured. The bi-exciton lines (M_T and M_L) and the line at 3926 Å were observed. It is concluded that these lines arise from the densely excited region in particle tracks.     

Crystal growth of Co ferrite on fine acicular γ-Fe2O3 particles

Highly coercive magnetic powder was obtained by growing cobalt ferrite on the surface of γ-Fe₂O₃ particles in highly alkaline suspensions containing cobalt and ferrous ions in a Co/Fe molar ratio = $\text{1}\text{2}$. The mechanism of the growth and the structure of cobalt ferrite on γ-Fe₂O₃ were studied by X-ray diffraction and electron diffraction techniques. Results show that crystals of cobalt ferrite CoFe₂O₄ with a spinel type crystal structure of lattice constant 8.415 Å grew epitaxially on γ-Fe₂O₃. The acicular direction of the epitaxially grown Co-γ-Fe₂O₃ as well as γ-Fe₂O₃ was in the [$\text{1}$01] direction. It was found that from the lattice constant value and the half width of X-ray diffraction peaks, the lattice constant epitaxially grown Co γ-Fe₂O₃ may be attributed to two kinds of crystals, viz., seed γ-Fe₂O₃ ($\text{a = 8.35 ～ 8.37}\text{A}\text{?}$) which was partly reduced to Fe₃O₄, and surface layer CoFe₂O₄ ($\text{a = 8.415}\text{A}\text{?}$). The crystal growth in the interface between the seed crystals and the growth layer was affected by the crystal structure of the seed crystals. The lattice constant of CoFe₂O₄ which was located in the vicinity of the interface was almost equal to that of the seed crystals.     

A multi-channel scattering theory for some time dependent Hamiltonians,charge transfer problem

Scattering theory for time dependent HamiltonianH(t)=?(1/2) Δ+ΣV _j (x?q _j (t)) is discussed. The existence, asymptotic orthogonality and the asymptotic completeness of the multi-channel wave operators are obtained under the conditions that the potentials are short range: |V _j (x)|≦C _j (1+|x|)^?2?ε, roughly spoken; and the trajectoriesq _j (t) are straight lines at remote past and far future, and |q _j (t)?q _k (t)| → ∞ ast → ± ∞ (j≠k).     

An anomalous emission excited near the absorption edge of pyrene crystals

Emission spectra and decay times of the fluorescence excited at the absorption edge region in pyrene crystals were measured. At liquid nitrogen temperature, the fluorescence under the excitation at 390 nm is considered as the excimer emission and its band peak shifts a little to the short wavelength in comparison with that of the excimer emission under the excitation at 360 nm. The emission decay times under the excitation at the 390 nm and 360 nm are about 155 ns and 180 ns, respectively, at liquid nitrogen temperature. The former decay time changes its value abruptly near 127 K. This abrupt change of the decay time may be due to the phase transition in pyrene crystals.     

Migration of excimers in pyrene crystals

Emission decay times of the new excimer were measured for undoped and perylene doped pyrene crystals. From the decay times obtained, the temperature dependence of the diffusion coefficient of the excimers was deduced by assuming a model in which two electronic states of the new excimer are involved in the energy transfer process. Within this model, it was found that in the upper excimer state the excimers migrated by a hopping process, while in the lower excimer state they migrated as free excimer excitons while undergoing phonon scattering.     

Structure in the emission from pyrene evaporated films

Emission spectra and decay times of fluorescence of pyrene thin films prepared by evaporation onto substrates at liquid nitrogen temperature were measured. Structure in the emission from films warmed slowly up to higher temperature is found to the higher energy side of the excimer emission band. The decay time is about 410 ns at temperatures between 110 K and 210 K. But the emission from the film warmed up to a temperature above 210 K shows only the excimer emission. These results are discussed in relation to an amorphous structure in the pyrene evaporated thin film.     

First principles study on electronic structure of β-Ga2O3

We have studied the electronic structure of β-Ga₂O₃ using the first principles full-potential linearized augmented plane wave method. It is found that β-Ga₂O₃ has an indirect band gap with a conduction band minimum (CBM) at Γ point and a valence band maximum on the E line. The anisotropic optical properties are explained by the selection rule of the band-to-band transitions. On the other hand, the shape of the CBM is almost isotropic and, therefore, the observed electronic anisotropy in the n-type semiconducting state should not be attributed to the properties of a perfect lattice. The Burstein-Moss shift is discussed using the effect of several allowed transitions between the levels of the valence band and the CBM.     

Discrete Dynamical Systems with W(A (1) m−1 × A (1) n−1) Symmetry

We give a birational realization of affine Weyl group of type A ⁽¹⁾ _m–1 × A ⁽¹⁾ _n–1. We apply this representation to construct some discrete integrable systems and discrete Painlevé equations. Our construction has a combinatorial counterpart through the ultra-discretization procedure.