The control of very low oxygen partial pressures with stabilized zirconia cell

Control of very low oxygen partial pressures was performed in the range of 10⁻²¹-10⁻²⁴ Pa at 750°C by pumping oxygen into the purified hydrogen stream with a stabilized zirconia cell. The oxygen partial pressures were monitored by a stabilized zirconia sensor. The stabilized zirconia oxygen sensor was calibrated by H₂-CO₂ gas buffer mixture in the range of oxygen pressure from 10⁻¹⁷ to 10⁻²¹ Pa, and oxygen partial pressures below 10⁻²¹ Pa were measured by extrapolating the calibration line to very low oxygen partial pressures. The lowest oxygen partial pressure controlled was 10⁻²⁴ Pa at 750°C, which was limited by gas leaks in the system and also by the reduction of the ionic transference number in solid electrolyte used as the oxygen pump.     

Some remarks on the universal cover of an open K3 surface

 We shall give, in an optimal form, a sufficient numerical condition for the finiteness of the fundamental group of the smooth locus of a normal K3 surface. We shall moreover prove that, if the normal K3 surface is elliptic and the above fundamental group is not finite, then there is a finite covering which is a complex torus. Received: 13 April 2001 / Published online: 16 October 2002 RID="⋆" ID="⋆" Supported by Korea Research Foundation Grant(KRF-2001-041-D00025) Mathematics Subject Classification (2000): 14J28     

Small and high-density GeSiC dots stacked on buried Ge hut-clusters in Si

Self-assembled GeSiC dots stacked on a Ge hut-cluster layer buried in Si have been investigated. The critical thickness for formation of GeSiC dots is reduced owing to the strain fields from the buried hut-clusters. By utilizing the stacked structure, the dot size is decreased and the uniformity is improved. The highest density of the GeSiC dots with stacked structures is 7.4×10¹⁰ cm⁻², which is six times larger than that of single GeSiC dots. The formation of the self-assembled GeSiC dots is strongly influenced by being stacked with buried Ge dots as well as C incorporation.     

Structural and electrical properties of crystalline (1−x)Ta2O5−xTiO2 thin films fabricated by metalorganic decomposition

Polycrystalline (1−x)Ta₂O₅−xTiO₂ thin films were formed on Si by metalorganic decomposition (MOD) and annealed at various temperatures. As-deposited films were in the amorphous state and were completely transformed to crystalline after annealing above 600 °C. During crystallization, a thin interfacial SiO₂ layer was formed at the (1−x)Ta₂O₅−xTiO₂/Si interface. Thin films with 0.92Ta₂O₅–0.08TiO₂ composition exhibited superior insulating properties. The measured dielectric constant and dissipation factor at 1 MHz were 9 and 0.015, respectively, for films annealed at 900 °C. The interface trap density was 2.5×10¹¹ cm⁻² eV⁻¹, and flatband voltage was −0.38 V. A charge storage density of 22.8 fC/μm² was obtained at an applied electric field of 3 MV/cm. The leakage current density was lower than 4×10⁻⁹ A/cm² up to an applied electric field of 6 MV/cm.     

Enhancement of sonochemical reaction of terephthalate ion by superposition of ultrasonic fields of various frequencies

The ultrasonic reactor with dual frequency was used and the effect of frequency on the fluorescence intensity of terephthalate ion was experimentally investigated in the frequency range from 176 to 635 kHz. The sonochemical reaction fields were visualized by using sonochemical luminescence of luminol solution. Compared with the fluorescence intensity of terephthalate ion for single frequency, the fluorescence intensity for dual frequency increased. The fluorescence intensity ratio of dual frequency to single frequency had maximum value when the frequency of transducer attached at the bottom wall was comparable in magnitude to that at the side wall. In the case of dual frequency, the sonochemical reaction fields became more extensive in the reactor and more intensive around the center of the reactor.     

Topological Superconductivity in Cu(x)Bi(2)Se(3)

A topological superconductor (TSC) is characterized by the topologically protected gapless surface state that is essentially an Andreev bound state consisting of Majorana fermions. While a TSC has not yet been discovered, the doped topological insulator Cu(x)Bi(2)Se(3), which superconducts below ～3 K, has been predicted to possess a topological superconducting state. We report that the point-contact spectra on the cleaved surface of superconducting Cu(x)Bi(2)Se(3) present a zero-bias conductance peak (ZBCP) which signifies unconventional superconductivity. Theoretical considerations of all possible superconducting states help us conclude that this ZBCP is due to Majorana fermions and gives evidence for a topological superconductivity in Cu(x)Bi(2)Se(3). In addition, we found an unusual pseudogap that develops below ～20 K and coexists with the topological superconducting state.     

Phase transition of Ta2NiO6 with the trirutile-type structure under high pressure and high temperature

High-pressure phase transition of Ta₂NiO₆ with the trirutile-type structure was investigated from the viewpoint of crystal chemistry. A new quenchable high-pressure phase was found in the pressure range higher than 7 GPa and 900°C. The high-pressure phase has an orthorhombic cell (a=4.797(1) Å, b=5.153(2) Å and c=14.85(1) Å and space group; Abm2), and it is more dense by 9.6% than the trirutile-structured phase. Infrared spectra of the trirutile-type phase and the high-pressure phase show that Ni²⁺ ions in the high-pressure phase are still in octahedral sites. The crystal structure of the high-pressure phase is considered as a cation-ordering trifluorite-type structure, which can be stabilized by a crystal field effect of Ni²⁺ ions.     

Impaired pulmonary blood flow distribution in congestive heart failure assessed using synchrotron radiation microangiography

Synchrotron radiation microangiography is a powerful tool for assessing adverse changes in pulmonary vessel density associated with primary pulmonary hypertension (PH). Congestive heart failure (CHF) leads to a `secondary' onset of PH, yet it is unknown whether secondary PH is also associated with reduced vessel density. This study utilized synchrotron radiation to assess both pulmonary vessel density and endothelial function in a Dahl rat model of CHF with secondary PH. High salt‐fed Dahl salt‐sensitive (Dahl‐S) and salt‐resistant (Dahl‐R) rats were anesthetized and microangiography was performed to assess the pulmonary vessel density and vascular responses to (i) sodium nitroprusside (5.0 µg kg^?1 min^?1), (ii) acetylcholine (3.0 µg kg^?1 min^?1) and (iii) ET‐1_A receptor blockade, BQ‐123 (1 mg kg^?1). Dahl‐S rats developed CHF and secondary PH as evident by endothelial dysfunction, impaired vasodilatory responses to acetylcholine, enhanced vasodilatory responses to BQ‐123 and extensive pulmonary vascular remodeling. Consequently, the pulmonary vessel density was adversely reduced. Interestingly, the etiology of secondary PH manifests with structural and functional changes that are comparable with that previously reported for primary PH. One important discrepancy, however, is that ET‐1 modulation of pulmonary vessels is most striking in vessels with a diameter range of 100–200 µm in secondary PH, in contrast to a range of 200–300 µm in primary PH. Such discrepancies should be considered in future studies investigating primary and secondary forms of PH.     

Crosstalk Suppression in Header Recognition Unit Using Time-Space Conversion

We demonstrate a suppression effect of a crosstalk among a target and similar header signals using the header recognition filter designed by a design technique of the multiple-object discriminant filter.     

Demonstration of an optical quantum controlled-NOT gate without path interference

We report the first experimental demonstration of an optical quantum controlled-NOT gate without any path interference, where the two interacting path interferometers of the original proposals have been replaced by three partially polarizing beam splitters with suitable polarization dependent transmittance and reflectance. The performance of the device is evaluated using a recently proposed method, by which the quantum process fidelity and the entanglement capability can be estimated from the 32 measurement results of two classical truth tables, significantly less than the 256 measurement results required for full quantum tomography.