Fabrication of microchannels in single-crystal GaN by wet-chemical-assisted femtosecond-laser ablation

We investigated micro- and nano-fabrication of wide band-gap semiconductor gallium nitride (GaN) using a femtosecond (fs) laser. Nanoscale craters were successfully formed by wet-chemical-assisted fs-laser ablation, in which the laser beam is focused onto a single-crystal GaN substrate in a hydrochloric acid (HCl) solution. This allows efficient removal of ablation debris produced by chemical reactions during ablation, resulting in high-quality ablation. However, a two-step processing method involving irradiation by a fs-laser beam in air followed by wet etching, distorts the shape of the crater because of residual debris. The threshold fluence for wet-chemical-assisted fs-laser ablation is lower than that for fs-laser ablation in air, which is advantageous for improving fabrication resolution since it reduces thermal effects. We have fabricated craters as small as 510 nm by using a high numerical aperture (NA) objective lens with an NA of 0.73. Furthermore, we have formed three-dimensional hollow microchannels in GaN by fs-laser direct-writing in HCl solution.     

Growth of crystalline quartz films with AT-cut plane by means of catalyst-enhanced vapor-phase epitaxy under atmospheric pressure

Crystalline quartz films with an AT-cut plane have been grown by catalyst-enhanced vapor-phase epitaxy, at atmospheric pressure, using two quartz buffer layers on a sapphire (110) substrate. In this method, the first quartz buffer layer was deposited on the sapphire (110) substrate at 773 K. After annealing at 823 K, the second buffer layer was deposited at 723 K. The crystal quartz epitaxial layer was then grown at 843 K. The X-ray full-width-at-half-maximum (FWHM) value of the crystalline quartz film obtained was smaller than that of crystalline quartz prepared using a hydrothermal process. The crystalline quality of the quartz films was dependent on the thickness of the buffer layers. Furthermore, it was found that angle control of the cut plane depended on the film thickness of the second buffer layer. The quartz films grown by vapor phase epitaxy show good oscillation characteristics at room temperature.     

Spatially selective modification of optical and magneto-optical properties in Fe- and Au-doped glasses irradiated with femtosecond-laser

The optical property and the magneto-optical response were space-selectively modified in transparent Fe³⁺- and Au³⁺-doped glasses by using infrared femtosecond- (fs-) laser irradiation and subsequent annealing. This irradiation process induces the precipitation of not only magnetic spinel-type Fe-oxide nanoparticles but also Au nanoparticles inside the glasses, which shows localized surface plasmon resonance absorption at the wavelengths larger than 500 nm. As the annealing time and the temperature increases, the position of the LSPR peaks exhibits red shifts, which is due to the growth of Au nanoparticles. Faraday rotation angles as a function of wavelength were measured, and the difference spectra exhibit distinct positive peaks, indicating that the coupling between the LSPR due to the Au nanoparticles and the diamagnetism of the matrix glass is effective. To decrease the coupling with the diamagnetic glass, a two-step annealing process (at 450 °C for 90 min and at 550 °C for 30 min) was carried out after irradiation with fs-laser. The preliminary annealing at the lower temperature contributes to the precipitation of ferrimagnetic magnetite nanoparticles. Au nanoparticles were subsequently grown by annealing at 550 °C. In this case, effective coupling between the LSPR and ferrimagnetic nanoparticles has significantly suppressed the intensity of the positive peak in the Faraday spectra compared with the single annealing process.     

Both electron and hole Dirac cone states in Ba(FeAs)2 confirmed by magnetoresistance

Quantum transport of Dirac cone states in the iron pnictide Ba(FeAs)(2) with a d-multiband system is studied by using single crystal samples. Transverse magnetoresistance develops linearly against the magnetic field at low temperatures. The transport phenomena are interpreted in terms of the zeroth Landau level by applying the theory predicted by Abrikosov. The results of the semiclassical analyses of a two carrier system in a low magnetic field limit show that both the electron and hole reside as the high mobility states. Our results show that pairs of electron and hole Dirac cone states must be taken into account for an accurate interpretation in iron pnictides, which is in contrast with previous studies.     

Small hepatocellular carcinomas in cirrhosis: differences in contrast enhancement effects between helical CT and MR imaging during multiphasic dynamic imaging

PURPOSE: The purpose of this study was to evaluate differences in the degrees of contrast enhancement effects of small hepatocellular carcinomas (HCCs) in patients with cirrhosis between helical computed tomography (CT) and magnetic resonance (MR) imaging during multiphasic contrast-enhanced dynamic imaging and to determine the diagnostic value of MR imaging especially in assessing hypovascular HCCs detected as hypoattenuating nodules on late-phase CT. SUBJECTS AND METHODS: This study included 64 small HCCs (<3 cm in diameter) in 40 patients with chronic hepatitis or cirrhosis who underwent multiphasic (arterial, portal and late phases) contrast-enhanced dynamic helical CT and MR imaging. The contrast enhancement patterns of each lesion in the arterial and late phases were evaluated by two radiologists experienced in liver MR imaging and categorized as one of five grades (1=hypoattenuated/hypointense; 2=slightly hypoattenuated/hypointense; 3=isoattenuated/isointense; 4=slightly hyperattenuated/hyperintense; 5=hyperattenuated/hyperintense), compared with the surrounding liver parenchyma. RESULT: Forty-three (67%) of 64 lesions showed Grade 4 (n=24) or Grade 5 (n=19) enhancement on arterial-phase CT, while 51 (80%) of 64 lesions showed Grade 4 (n=20) or Grade 5 (n=31) enhancement on arterial-phase MR imaging, indicating hypervascular HCCs. The grading score of hypervascular HCCs on arterial-phase MR imaging (mean: 4.61) was significantly (P<.01) higher than that for hypervascular HCCs on arterial-phase CT (mean: 4.20), showing better detection of the hypervascularity (arterial enhancement) of the lesion on arterial-phase MR imaging. Regarding hypovascular HCCs, all (100%) of 21 hypovascular HCCs on CT showed Grade 1 (n=10) or Grade 2 (n=11) enhancement on late-phase CT, seen as hypoattenuation. In contrast, 8 (62%) of 13 hypovascular HCCs on MR imaging showed Grade 1 (n=1) or Grade 2 (n=7) enhancement on late-phase MR imaging, seen as hypointensity. Grading scores of hypovascular HCCs on late-phase images were significantly (P<.001) lower on CT than on MR imaging (mean score: 1.52 vs. 2.31), indicating better washout effects for hypovascular HCCs on late-phase CT. CONCLUSION: The washout effects for small HCCs on late-phase MR imaging were inferior to those for small HCCs on late-phase CT. Especially, hypovascular HCCs demonstrated as hypoattenuating nodules on late-phase CT were often not seen on late-phase MR imaging, requiring careful evaluation of other sequences, including unenhanced T(1)-weighted and T(2)-weighted MR images.     

Three-dimensional printing of conducting polymer microstructures into transparent polymer sheet: Relationship between process resolution and illumination conditions

Three-dimensional (3D) polypyrrole microstructures were successfully obtained in a transparent polymer sheet by 3D scanning of the laser focal point. The lateral process resolution of the microstructures was studied under different photofabrication conditions such as the repetition rate of the femtosecond pulse laser and the waiting time of the laser focal point scanning. As a result, a very small line width of the polypyrrole deposition of less than 500 nm was realized with good reproducibility.     

Effect of Ampoule Rotation on Growth of InGaAs Ternary Bulk Crystals from Solution

In_xGa_1-xAs (x = 0.045) ternary bulk crystals were grown on GaAs seeds from an In–Ga–As solution by the temperature-difference method modified to rotate a growth ampoule. The effect of ampoule rotation on the profiles of the composition and the growth rate were investigated. The In compositional profiles were uniform irrespective of the ampoule rotation. On the other hand, the growth rate at the center of the crystal increased from 40 μm/h at 0 rpm to 55 μm/h at 100 rpm. The profile of growth rate changed from concave to convex toward the seed due to the ampoule rotation. Flow patterns and compositional profiles in the solution were simulated by solving four equations: Navier-Stokes, continuity, energy, and solute diffusion. The ampoule rotation enhanced the transportation of As component from the GaAs feed toward the seed at the central region in the solution. This led to the increase of the growth rate.