Search for D0-D0 mixing in D0 --> K+ pi(-) decays and measurement of the doubly-Cabibbo-suppressed decay rate

We have searched for mixing in the D(0)-D (0) system by measuring the decay-time distribution of D(0) --> K(+) pi(-) decays. The analysis uses 90 fb(-1) of data collected by the Belle detector at the KEKB e(+) e(-) collider. We fit the decay-time distribution for the mixing parameters x' and y' and also for the parameter R(D), which is the ratio of the rate for the doubly-Cabibbo-suppressed decay D(0)--> K+ pi(-) to that for the Cabibbo-favored decay D(0)--> K-pi(+). We do these fits both assuming CP conservation and allowing for CP violation. We use a frequentist method to obtain a 95% C.L. region in the x'(2) - y' plane. Assuming no mixing, we measure R(D) = (0.381 +/- 0.017(+0.008)(-0.016))%.     

用发射光谱分析法检测地膜中金属杂质含量

本文描述农用薄膜中Ａｌ、Ｆｅ、Ｍｇ、Ｃａ、Ｓｉ、Ｃｕ、Ｔｉ杂质元素的发射光谱分析法，该方法直接压样于石墨电极中，简便，快速，取得了满意的结果。     

彩色照片制作技术

彩色照片由于色彩鲜艳．形象逼真，在工农业生产、科研和日常生活中得到广泛应用。本文就校正偏色与曝光谈一下自己的看法。     

空间光学遥感器主镜加工过程中疲劳寿命研究

针对空间光学遥感器主镜镜面加工过程中,磨盘与主镜间磨削动作往复运行引起的主镜柔性支撑结构疲劳寿命问题,通过建立主镜组件的有限元模型,利用MSC.Fatigue软件按应力-寿命(S-N)法对主镜组件进行了疲劳寿命分析,确定了支撑结构的薄弱部位,并对仿真过程进行了误差分析,讨论了影响仿真结果的各个因素.对比热真空试验和动力学试验前后主镜镜面面型数据,验证了支撑结构加工、设计参量的合理性.通过疲劳寿命仿真分析,可以有效预示光学结构在加工过程中的疲劳情况,为空间光学遥感器结构的设计、加工提供理论依据和参考.     

Electrical properties of ferroelectric-gate FETs with SrBi2Ta2O9 formed using MOCVD technique

Ferroelectric-gate?field-effect?transistors?(FeFETs) with a Pt/SrBi₂Ta₂O₉/Hf-Al-O/Si gate stack were fabricated using the metal-organic chemical vapor deposition (MOCVD) technique to prepare the SrBi₂Ta₂O₉ (SBT) ferroelectric layer. A?good threshold voltage (V _th) distribution was found for more than 90?n-channel FeFETs in one chip with a 170?nm SBT layer owing to the good film uniformity of the SBT layer deposited by MOCVD. The average memory window $(V_{\mathrm{w}}^{\mathrm{av}})$ and the standard deviations (σ _thl,σ _thr) of the left- and right-side branches of the drain-gate voltage curves of the FeFETs yielded a $V_{\mathrm{w}}^{\mathrm{av}}/(\sigma_{\mathrm{thl}} + \sigma_{\mathrm{thr}})$ value of 5.45, indicating that the FeFETs can be adapted for large-scale-integration. The electric field, the energy band profile in the gate stack, and the gate leakage current were also investigated at high gate voltages. We found that the effect of Fowler–Nordheim tunneling appeared under these conditions. Because of the tunneling injection and trapping of electrons into the gate insulators, the operation voltage ranges of the FeFETs were limited by this tunneling.     

理论研究B2分子X3Σg-和A3Πu态的光谱性质

采用Davidson修正的内收缩多参考组态相互作用方法及Dunning等的相关一致基aug-cc-pV6Z计算了B₂分子X³∑_g^-和A³Π_u电子态的势能曲线.利用总能量外推公式,将两个电子态的总能量分别外推至完全基组极限.对势能曲线进行核价相关修正及相对论修正计算,得到了同时考虑两种效应修正的外推势能曲线.通过同位素质量识别,得到了主要的同位素分子¹¹B¹¹B和¹⁰B¹¹B的X³Σ_g^-和A³Ⅱ_u电子态的光谱常数T_e,R_e,ω_e,ω_ex_e,ω_ey_e,B_e,β_e和γ_e.求解双原子分子核运动的径向Schr（o|¨）dinger方程,找到了无转动的同位素分子¹¹B₂（X³Σ_g^-,A³Π_u）和¹⁰B¹¹B（X³∑_g^-,A³Π_u）的全部振动态.针对每一同位素分子的每一振动态,分别计算了其振动能级和惯性转动常数等分子常数,它们均与已有的实验结果较为一致.其中,¹⁰B¹¹B（A^Π_u）分子的光谱常数和分子常数属首次报道.     

基于缺陷光子晶体结构的GaN基发光二极管光提取效率的有关研究

现有的研究表明,利用光子晶体可以有效提高发光二极管的光提取效率.由于在制造时光子晶体中可能会存在缺陷和错位,本文基于时域有限差分法对光子晶体中的缺陷和错位对发光二极管发光效率的影响进行了研究.数值仿真结果表明,光子晶体中少量缺陷或者微小错位并不会降低发光二极管的光提取效率,其中某些缺陷反而能增强光子晶体发光二极管的光提取效率.本文对其物理机理给出了详细的理论分析,并设计了一种具有缺陷的光于晶体,在未刻蚀到有源层(离有源层20 nm)的情况下,其光提取效率达到了完美光子晶体的1.6倍.通过对这种缺陷光子晶体的空间频谱分析可知,可以通过设计具有特殊空间频谱分布的光子晶体来提高发光二极管的发光效率,这对设计高光提取效率的光子晶体结构和制造高效率的发光二极管有指导意义.     

罐装橙汁超高温瞬时灭菌的数值模拟研究

由于对橙汁的灭菌工艺没有进行精确的研究,在橙汁的实际生产中经常是使用过度灭菌来保证果汁灭菌的彻底。过度灭菌不但引起橙汁生产的能耗增加而且会导致橙汁的营养成分的损失。本文分析了果汁中常见的细菌,得出了灭菌结束时所需的最低温度;在此基础上利用数值模拟的方法对橙汁的超高温瞬时灭菌进行了计算。同时使用实验对CFD计算的结果进行了验证,误差在9.5%以内,表明CFD对橙汁的超高温灭菌的模拟是可行的。模拟得出了不同温度时的灭菌的最理想时间条件分别为:135℃(408 K),13 s;140℃(413K),12 s;145℃(418 K),12 s;150℃(423K),11 s。