Carrier diffusion in InGaAs/GaAs quantum wells grown on vicinal GaAs(0 0 1) substrates

We have investigated the influence of vicinal GaAs substrates on the optical and electronic properties of InGaAs/GaAs quantum wells (QWs). A single In_0.10Ga_0.90As QW was grown by molecular-beam epitaxy on a vicinal GaAs(0 0 1) substrate with a miscut angle of 0° (nominal), 2°, 4° and 6° towards [1 1 0]. The carrier diffusion was obtained by a micro-photoluminescence scan technique that permits to observe the effective diffusion length characterized by the lateral spread of carriers in the QW followed by radiative recombination. The carrier diffusion length was obtained parallel (L_||) and perpendicular (L) to the atomic steps. The diffusion length decreases as the temperature increases up to 100 K. Above this temperature we found different behaviours that depend on the sample miscut angle.     

The sojourn time and related characteristics of the age-dependent branching process

An age-dependent branching process where disasters occur as a renewal process leading to annihilation or survival ofall the cells, is considered. For such a process, the total mean sojourn time of all the cells in the system is analysed using the regeneration point technique. The mean number of cells which die in timet and its asymptotic behaviour are discussed. When the disasters arrival as a Poisson process and the lifetime of the cells follows exponential distribution, elegant inter-relationships are found among the means of (i) the total number of cells which die in timet (ii) the total sojourn time of all cells in the system upto timet and (iii) the number of living cells at timet. Some of the existing results are deduced as special cases for related processes.     

Synthesis of Spiranes by Cyclocondensation of 2-Phenacylbenzothiazole with Hydrazines and o-Hydroxybenzaldehydes

2-Phenacylbenzothiazole reacts with hydrazines and o-hydroxybenzaldehydes to give hydrazones and chalcones. These compounds tend to isomerize to benzothiazole-2-spiro-3'-pyrazoles and benzo[b]pyran-2-spiro-2'-benzothiazoles, respectively.     

A Study of Drop Size Distribution in Multistage Bubble Extractor

Results obtained in determining experimentally the mean volume-surface drop diameter of the dispersed phase in a multistage bubble extractor are presented.     

Magnetic field penetration into half-space for type-II superconductors of the second kind

Equations that simulate the magnetic induction and current density distributions in half-space in view of the power I-V characteristic are derived. The magnetization front velocity is determined for a given mean rate of external magnetic field variation at the boundary of the sample. An integral condition for the electrical resistance (nonlinearly depending on the magnetic field) under which the magnetic flux penetrates into the sample with a finite rate is found. An analytical solution that simulates the power variation of the magnetic field at the boundary is given. The Bean generalized model describing the current density distribution near the critical current is considered. It is shown that solutions like shock waves may arise beyond the applicability domain of the Bean model.     

Demonstration of the stability or instability of multibreathers at low coupling

Whereas there exists a mathematical proof for one-site breathers stability, and an unpublished one for two-site breathers, the methods for determining the stability properties of multibreathers rely on numerical computation of the Floquet multipliers or on the weak nonlinearity approximation leading to discrete nonlinear Schrödinger equations. Here we present a set of multibreather stability theorems (MST) that provides a simple method to determine multibreathers stability in Klein–Gordon systems. These theorems are based in the application of degenerate perturbation theory to Aubry’s band theory. We illustrate them with several examples.     

Modification of GaAs by medium-energy N<Stack><Subscript>2</Subscript><Superscript>+</Superscript></Stack> ions

The modification of GaAs with a 2500-eV beam containing N ₂ ⁺ and Ar⁺ ions is examined with Auger electron spectroscopy. Most implanted nitrogen atoms are found to react with the matrix, substituting arsenic atoms to produce a several-nanometer-thick layer of the single-phase GaAs_1−x N_x (x=6%) solid solution. The GaN phase is absent. Displaced arsenic atoms and nitrogen atoms unreacted with the matrix are present in the layer and on its surface. The former segregate, whereas the latter form molecules.     

IR-induced nonlinear optics in Ge-doped Bi12TiO20 large-sized nanocrystallites

Photoinduced non-linear optical effects in large-sized (up to 25 nm) nanocrystallites (NC) of Ge-doped Bi₁₂TiO₂₀ (BTO:Ge) incorporated within olygoether photopolymer matrix have been studied. Photoinduced second harmonic generation (PISHG) was measured. Nd:YAG pulsed laser (λ=1.06 μm) was used as a source of photoinducing light. As a fundamental light source for the SHG and two-photon absorption, Er:LiYF₄ laser (λ=2.065 μm) was used. We have found that with increasing IR pump power density, the output doubled frequency SHG signal (λ=1.03 μm) increases and achieves its maximum value at the pump power density about 0.45 GW/cm² and NC size about 12 nm.The values of second-order optical susceptibilities were almost 20% larger than for the pure BTO NC single crystals. With decreasing temperature below 60 K, the SHG signal increases achieving maximal value at LHeT.