首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   375278篇
  免费   3136篇
  国内免费   909篇
化学   198879篇
晶体学   6382篇
力学   17424篇
综合类   19篇
数学   39862篇
物理学   116757篇
  2021年   3146篇
  2020年   3441篇
  2019年   4156篇
  2018年   5395篇
  2017年   5476篇
  2016年   7634篇
  2015年   4227篇
  2014年   7289篇
  2013年   16544篇
  2012年   12445篇
  2011年   14911篇
  2010年   11209篇
  2009年   11332篇
  2008年   13617篇
  2007年   13540篇
  2006年   12309篇
  2005年   10996篇
  2004年   10260篇
  2003年   9426篇
  2002年   9250篇
  2001年   10707篇
  2000年   8085篇
  1999年   6145篇
  1998年   5069篇
  1997年   5088篇
  1996年   4788篇
  1995年   4334篇
  1994年   4365篇
  1993年   4122篇
  1992年   4986篇
  1991年   4961篇
  1990年   4851篇
  1989年   4881篇
  1988年   4844篇
  1987年   4844篇
  1986年   4547篇
  1985年   5855篇
  1984年   5968篇
  1983年   4810篇
  1982年   4930篇
  1981年   4943篇
  1980年   4527篇
  1979年   5181篇
  1978年   5167篇
  1977年   5398篇
  1976年   5256篇
  1975年   4830篇
  1974年   4741篇
  1973年   4805篇
  1972年   3518篇
排序方式: 共有10000条查询结果,搜索用时 0 毫秒
101.
The results of calculations of the elastic scattering cross section of positrons on noble gas and alkali atoms are presented. The calculations are performed within the one-electron Hartree-Fock approximation with multielectron correlations in the so-called random phase approximation with exchange taken into account. Virtual positronium formation is taken into account and proved to be very important. Arguments are presented that the positron polarization potential is repulsive for alkali atoms. The results obtained are in a reasonable agreement with experiment and with some previously reported calculations.  相似文献   
102.
The surface of hydrogen-sensitive GaAs Schottky diodes is modified by nonpolishing etching and by producing quantum wells and quantum dots in the space-charge region of the semiconductor. The sensitivity to hydrogen is found to increase by a factor of 8–37 after the etching and by two or three orders of magnitude after the introduction of quantum wells and dots. It is shown that the increased sensitivity is associated with the lowering of the barrier at the Pd/GaAs interface, the retardation of hydrogen diffusion into GaAs due to the presence of strained quantum-size layers, and an increase in the recombination current. The presence of the recombination component is supported by luminescence from the quantum wells and quantum dots, as well as from the GaAs substrate. The etch composition is shown to be a decisive factor in raising the sensitivity.  相似文献   
103.
104.
105.
The occurrence of two noninteracting forms of Pd-porphin in the ground electronic state in a wide number of Shpolskii matrices maintained at liquid helium temperature was observed with the help of the finestructure phosphorescence spectra of these systems. The ratio between these forms can be varied in wide limits by choosing a particular matrix, which indicates that the matrix plays a significant role in the conformation formation of the tetrapyrrole macrocycle. Based on comparison both with the resonance Raman spectra and with the results of investigations of metal complexes of porphin by the selective spectroscopy methods, the shortwavelength spectral form has been shown to correspond to the planar molecular structure, whereas the longwavelength form has been attributed to a nonplanar molecular structure with the distortion of the porphin macrocycle of the saddle type. The results obtained indicate that the methods of fine structure spectroscopy make it possible to efficiently study distorted molecular structures stabilized in solid matrices at low temperatures.  相似文献   
106.

A colourless quartz crystal doped with 57Fe3+ was obtained by hydrothermal synthesis in an NH4F solution. The crystal was transformed into violet amethyst by gamma-irradiation. The change in colour was accompanied by changes in the Mössbauer spectrum that can be interpreted as the conversion of trivalent iron into the tetravalent state: Fe3+→Fe4+.

  相似文献   
107.
The fusion evaporation reaction 122Sn(14N, 4n)132La was used to populate the high-spin states of 132La at the beam energy of 60 MeV. A new band consisting of mostly E2 transitions has been discovered. This band has the interesting links to the ground state 2- and the isomeric state 6-. A new transition of energy 351 keV connecting the low-spin states of the positive-parity band based on the πh 11/2 ⊗ νh 11/2 particle configuration, has been found. This has played a very important role in resolving the existing ambiguities and inconsistencies in the spin assignment of the band head. Received: 12 August 2002 / Accepted: 18 March 2003 / Published online: 7 May 2003  相似文献   
108.
The results of a numerical study are described in which the interactions of a primary shock wave with a secondary diaphragm in expansion tubes are taken into account. The developing wave pattern in the interacting process of the shock with a secondary diaphragm are visualized by many kinds of figures (e.g., the time-distance diagrams of the wave phenomena on the axis, the acoustic impedance contours, and the time histories of the pitot pressure on the axis), and the influences of the shape and rupture process of the diaphragm on the quality of the test gas are explored.  相似文献   
109.
Solid state nuclear track detectors are commonly used for measurements of concentrations of radon gas and/or radon progeny. All these measurements depend critically on the thickness of the removed layer during etching. However, the thickness of removed layer calculated using the etching period does not necessarily provide a sufficiently accurate measure of the thickness. For example, the bulk etch rate depends on the strength of stirring during etching for the LR 115 detector. We propose here to measure the thickness of the removed layer by using energy-dispersive X-ray fluorescence spectrometry. In the present work, a reference silver nitrate pellet is placed beneath the LR 115 detector, and the fluorescence X-ray intensity for silver is then measured. We have found a linear relationship between the X-ray intensity and the thickness of the removed layer for LR 115 detector. This provides a fast method to measure the thickness of removed layer from etching of LR 115 detector. However, this method was found to be inapplicable for the CR-39 detector. Therefore, alternative methods have yet to be explored for the CR-39 detector.  相似文献   
110.
The electro-optic and complex dielectric behaviour of an antiferroelectric liquid crystal 4-(1-methylheptyloxycarbonyl)phenyl 4'-(n-butanoyloxyprop-1-oxy)biphenyl-4-carboxylate, having chiral SmCA* and hexatic smectic phases, have been investigated. Complex dielectric permittivities were measured as a function of frequency, d.c. bias field and temperature. Spontaneous polarization was measured by the current reversal technique; tilt angle was measured under a polarizing microscope using a low frequency electric field. The electro-optic properties and dielectric behaviour of the material are compared with results obtained by DSC and polarizing optical microscopy. Dielectric relaxation processes in SmCA* and hexatic smectic phases were determined. The dielectric strength at the SmCA* to hexatic smectic phase transition is discussed in terms of coupling between the long range bond orientational order and smectic C director. It seems from the results of spontaneous polarization and dielectric relaxation spectroscopy that the material might possess an additional phase between the SmCA* and hexatic smectic I* phases.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号