Erratum: Synthesis and characterization of diorganotin(IV) complexes of Schiff bases with ONO‐type donors and crystal structure of [N‐(2‐hydroxy‐4‐nitrophenyl)‐3‐ethoxysalicylideneiminato]diphenyltin(IV)

The article referenced above was first published online on 30 August 2007 with incorrect pagination; the pagination has now been corrected online and in print. Copyright © 2007 John Wiley & Sons, Ltd.     

Norms on unitizations of banach algebras revisited

Let A be an algebra without unit. If ∥ ∥ is a complete regular norm on A it is known that among the regular extensions of ∥ ∥ to the unitization of A there exists a minimal (operator extension) and maximal (ℓ₁-extension) which are known to be equivalent. We shall show that the best upper bound for the ratio of these two extensions is exactly 3. This improves the results represented by A. K. Gaur and Z. V. Kovářík and later by T. W. Palmer. The second author was partially supported by the grant No. 201/03/0041 of GAČR.     

Observation of spontaneous pattern with six-fold symmetry in disk-shaped ZnO complex microstructures

Using a simple vapor phase transport technique, we have fabricated unique complex disk-shaped ZnO microstructures comprising a small disk coaxially grown on a large one and observed spatially perfect six-fold symmetric patterns. The observed results can be explained based on the spontaneous nanoindentation (NI) effect under the geometric constraints and the explanation can be extended to fathom the growth mechanism of other highly symmetrical ZnO nanostructures. Our results indicate that NI not only can elucidate the mechanical properties of surfaces and thin films but also is an effective approach to fabricate ordered nanostructures with high precision on the location of the building blocks. PACS 81.16.Rf; 81.07.-b; 81.05.Dz     

Preparation of MgB<Subscript>2</Subscript>/Fe superconductor wire by electrical self-heating

MgB₂/Fe wires were prepared by electrical self-heating of in situ powder-in-tube wires for the first time at ambient conditions. Characterization of the wires processed at 750 °C, 800 °C and 850 °C for 15 min by XRD, SEM, ϱ–T, susceptibility and J_C measurements shows that the MgB₂ formed is of high quality particularly with respect to phase purity and transport J_C. The method considerably reduces the overall energy consumption vis-à-vis the production cost, simplifies the complexity of the fabrication procedure and is promising for manufacture of high-quality MgB₂ superconducting wires. PACS 74.70.Ad; 74.62.Bf; 74.25.Fy; 74.25.Ha; 81.20.Hy     

Effect of nitrogen surface doping on the work function and field emission of hydrogenated amorphous carbon films

The effect of nitrogen surface doping on the electron field emission characteristics of hydrogenated amorphous carbon films was studied. It was found that the emission threshold electric field decreased after nitrogen surface doping which indicated the reduction of the emission barrier at the film surface. It was demonstrated that this improvement arose from the decrease of the effective work function due to the formation of a dipole layer induced by chemical termination and chemical structural change on the film surface. PACS 52.75.Xx; 73.30 +y; 73.61.Jc     

Shape transition from InAs quantum dash to quantum dot on InP(3 1 1)A

We report on the shape transition from InAs quantum dashes to quantum dots (QDs) on lattice-matched GaInAsP on InP(3 1 1)A substrates. InAs quantum dashes develop during chemical-beam epitaxy of 3.2 monolayers InAs, which transform into round InAs QDs by introducing a growth interruption without arsenic flux after InAs deposition. The shape transition is solely attributed to surface properties, i.e., increase of the surface energy and symmetry under arsenic deficient conditions. The round QD shape is maintained during subsequent GaInAsP overgrowth because the reversed shape transition from dot to dash is kinetically hindered by the decreased ad-atom diffusion under arsenic flux.