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31.
Julia K Pruns Jens-Peter Vietzke Manfred Strassner Claudius Rapp Ulrich Hintze Wilfried A K?nig 《Rapid communications in mass spectrometry : RCM》2002,16(3):208-211
A new solvent-free sample preparation method using silver trifluoroacetate (AgTFA) was developed for the analysis of low molecular weight paraffins and microcrystalline waxes by laser desorption/ionization time-of-flight mass spectrometry (LDI-TOFMS). Experiments show that spectral quality can be enhanced by dispersing AgTFA directly in liquid paraffins without the use of additional solvents. This preparation mixture is applied directly to the MALDI probe. Solid waxes could be examined by melting prior to analysis. The method also provides sufficiently reproducible spectra that peak area ratios between mono- and bicyclic alkane peaks indicated variations in the cycloalkane content of paraffin samples. Dehydrogenation of hydrocarbons observed during the desorption/ionization process was studied by analysis of alkane standards. 相似文献
32.
Data Envelopment Analysis (DEA) offers a piece-wise linear approximation of the production frontier. The approximation tends to be poor if the true frontier is not concave, eg in case of economies of scale or of specialisation. To improve the flexibility of the DEA frontier and to gain in empirical fit, we propose to extend DEA towards a more general piece-wise quadratic approximation, called Quadratic Data Envelopment Analysis (QDEA). We show that QDEA gives statistically consistent estimates for all production frontiers with bounded Hessian eigenvalues. Our Monte-Carlo simulations suggest that QDEA can substantially improve efficiency estimation in finite samples relative to standard DEA models. 相似文献
33.
A numerical procedure, with an exact strain-displacement relationship of twisted and curved cylindrical panels having variable thickness derived by considering the Green strain tensor on general shell theory, is presented using the principle of virtual work and the Rayleigh-Ritz method with algebraic polynomials as in-plane and transverse displacement functions. The accuracy and applicability of the procedure are verified by comparing the present results with previous experimental and theoretical results for several panels. The effects of variation ratio of thickness in chordwise and lengthwise directions, twist, and curvature both in two directions aforementioned on vibrations of cylindrical panels are studied in detail, and typical vibration mode shapes are plotted to demonstrate the effects. 相似文献
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35.
K. A. Bronnikov 《Annalen der Physik》1991,503(8):527-534
A multidimensional generalization of the Reissner-Nordström solution of general relativity is obtained for the case of n Ricci-flat internal spaces. A two-parameter family of black-hole solutions for an arbitrary dimensionality D is selected. Nontrivial black holes with D > 4 are shown to exist only with a nonzero electric charge. Observational consequences are discussed, in particular, a violation of Coulomb's law. 相似文献
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37.
Yu. K. Voron'ko A. B. Kudryavtsev V. V. Osiko E. V. Sorokin 《Journal of Applied Spectroscopy》1991,55(4):953-957
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 55, No. 4, pp. 535–540, October, 1991. 相似文献
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The structural properties of polycrystalline silicon films, prepared by plasma enhanced chemical vapor deposition system, with different flow rates of SiH4/SiF4 mixtures at 300 °C were investigated. This study indicates that the low hydrogen coverage on the growing surface, under optimum fluorine radicals, will be leaded to an improvement of crystallized area as compared with case of high hydrogen coverage surface. Moreover, the studies of the role of SiH4 and SiF4 radicals show that the SiH4 radicals are important in the nucleation and growth of grains. However, SiF4 radicals are effective in the structural change of grain boundaries regions and by this way, in the present system, establish the growth of grains under the dominant 〈1 1 0〉 direction. The stress investigation indicates that addition of high flow rate of SiF4 in amorphous film, results in the nearly stress free films. Finally, we found that the changes in g-value reflect the changes in the intrinsic compressive and tensile stress in the both polycrystalline and amorphous silicon films. 相似文献