Entanglement Dynamics of a Generic-Spin Model

We investigate the entanglement dynamics of a generic-spin model with weak external field. We first derive the time-dependent solutions of angular momentum operators with short-time approximation and then numerically calculate the entangled witness. It’s shown that one can dynamically generate quantum entanglement by adjusting coupling strength.     

Mössbauer study of α-Fe2O3 fine particles coated with cobalt and pyridine

The properties of α-Fe₂O₃ line particles coated with cobalt and pyridine have been investigated by means of magnetic measurements and Mössbauer spectra. The Morin transition temperature, T_M for Co-coated α-Fe₂O₃ decreases and that for pyridine-coated α-Fe₂O₃ increases, comparing with the pure α-Fe₂O₃. The angles between (111) axis and the spin of iron ions for these samples have been calculated from the quadrupole splitting.     

LB薄膜中四新戊氧基酞菁锌和四壬基酞菁铜分子聚集体的吸收光谱的温度特性

本文制备了四新戊氧基酞菁锌(Tetra-neopentoxy phthalocyanine zine)(TNPPeZn)和四壬基酞菁铜(Tetra-nonyl phthalocyanine copper)(TNPeCu)两种酞菁衍生物的Langmuir-Blodgett(LB)薄膜.通过测量10～473K温度下的吸收光谱,研究了两种薄膜的分子聚集状态.TNPPeZn的LB薄膜中,存在着分子单体和分子二聚体,在吸收光谱中分别表现为680nm和620nm的吸收峰.随着温度的升高,分子单体逐渐转变为分子二聚体,这个过程是不可逆的.TNPeCu的LB薄膜中,除了分子单体和分子二聚体以外,还有吸收为740nm的分子J聚集体存在.随着温度的变化,J聚集体发生可逆变化.     

Investigation on an ultra-compact 1\times 2 polymer electro-optic switch using cross-coupling 2N+1 vertical-turning serial-coupled microrings

Generic model and thorough investigation are proposed for a novel $1\times 2$ 1 × 2 polymer electro-optic (EO) switch based on one-group $2N+1$ 2 N + 1 vertical-turning serial-coupled microrings. For realizing boxlike flat spectrum as well as low crosstalk and insertion loss, resonance order and coupling gaps are optimized. The MRR switches with $N \ge 1$ N ≥ 1 reveal favorable boxlike spectrum as when compared with the simple device with only one microring ( $N = 0$ N = 0 ). For obtaining $<-30\,\text{ dB }$ < - 30 dB crosstalk under through-state, the dependency of switching voltage on $N$ N is determined as $7.19 \times \text{ exp }(-N/0.72) + 1.72\,(\text{ V })$ 7.19 × exp ( - N / 0.72 ) + 1.72 ( V ) . Under the operation voltages of 0 V (drop state) and the predicted switching voltages (through state), the device performances are analyzed, and $1 \le N \le 10$ 1 ≤ N ≤ 10 is required for dropping the insertion loss (drop state) below 10 dB. The crosstalk of the ten devices ( $N = 1-10$ N = 1 - 10 ) are $< -19.5\,\text{ dB }$ < - 19.5 dB under drop state and $< -28.7\,\text{ dB }$ < - 28.7 dB under through state, and the insertion losses of the devices ( $N = 1-10$ N = 1 - 10 ) are $< 9.715\,\text{ dB }$ < 9.715 dB under drop state and $< 1.573\,\text{ dB }$ < 1.573 dB under through state. The device also has ultra-compact footprint size of only 0.33–1.06 mm, which is only 1/10–1/3 of those of our previously reported polymer EO switches based on directional coupler or Mach–Zehnder interferometer structures. Therefore, the proposed device is capable of highly integration onto optical networks-on-chip.     

A low specific on-resistance SOI MOSFET with dual gates and a recessed drain

A low specific on-resistance(Ron,sp) integrable silicon-on-insulator(SOI) metal-oxide semiconductor field-effect transistor(MOSFET) is proposed and investigated by simulation.The MOSFET features a recessed drain as well as dual gates,which consist of a planar gate and a trench gate extended to the buried oxide layer(BOX)(DGRD MOSFET).First,the dual gates form dual conduction channels,and the extended trench gate also acts as a field plate to improve the electric field distribution.Second,the combination of the trench gate and the recessed drain widens the vertical conduction area and shortens the current path.Third,the P-type top layer not only enhances the drift doping concentration but also modulates the surface electric field distributions.All of these sharply reduce Ron,sp and maintain a high breakdown voltage(BV).The BV of 233 V and Ron,sp of 4.151 mΩ·cm2(VGS = 15 V) are obtained for the DGRD MOSFET with 15-μm half-cell pitch.Compared with the trench gate SOI MOSFET and the conventional MOSFET,Ron,sp of the DGRD MOSFET decreases by 36% and 33% with the same BV,respectively.The trench gate extended to the BOX synchronously acts as a dielectric isolation trench,simplifying the fabrication processes.     

Determining the resistance of X-pinch plasma

The current and the voltage of an X-pinch were measured. The inductance of the X-pinch was assumed to be a constant and estimated by the calculation of the magnetic field based on the well-known Biot-Savart's Law. The voltage of the inductance was calculated with L · di/dt and subtracted from the measured voltage of the X-pinch. Then, the resistance of the X-pinch was determined and the following results were obtained. At the start of the current flow the resistance of the exploding wires is several tens of Ohms, one order of magnitude, higher than the metallic resistance of the wires at room temperature, and then it falls quickly to about 1 , which reflects the physical processes occurring in the electrically exploding wires, i.e., a current transition from the highly resistive wire core to the highly conductive plasma. It was shown that the inductive contribution to the voltage of the X-pinch is less than the resistive contribution. For the wires we used, the wires' material and diameter have no strong influence on the resistance of the X-pinch, which may be explained by the fact that the current flows through the plasma rather than through the metallic wire itself. As a result, the current is almost equally divided between two parallel X-pinches even though the diameter and material of the wires used for these two X-pinches are significantly different.     

Small amplitude approximation and stabilities for dislocation motion in a superlattice

Starting from the traveling wave solution, in small amplitude approximation, the Sine-Gordon equation can be re- duced to a generalized Duffing equation to describe the dislocation motion in a superlattice, and the phase plane properties of the system phase plane are described in the absence of an applied field. The stabilities are also discussed in the presence of an applied field. It is pointed out that the separatrix orbit describing the dislocation motion as the kink wave may transfer the energy along the dislocation line, keep its form unchanged, and reveal the soliton wave properties of the dislocation motion. It is stressed that the dislocation motion process is the energy transfer and release process, and the system is stable when its energy is minimum.     

Analytical periodic motions in a parametrically excited, nonlinear rotating blade

The stability and bifurcation analyses of periodic motions in a rotating blade subject to a torsional excitation are investigated. For high speed rotations, cubic geometric nonlinearity and gyroscopic effects of the rotating blade are considered. From the Galerkin method, the partial differential equation of the nonlinear rotating blade is simplified to the ordinary differential equations, and periodic motions and stability of the rotating blade are studied by the generalized harmonic balance method. The analytical and numerical results of periodic solutions are compared. The rich dynamics and co-existing periodic solutions of the nonlinear rotating blades are investigated.     

The Monte-Carlo simulation on a scintillator neutron detector

A simulation of the properties of the shifting scintillator neutron detector using 6LiF/ZnS(Ag) scintillation screens is performed.The simulation results show that the light attenuation length of standard BC704 scintillator is about 0.65 mm.Its thermal neutron detection efficiency,gamma sensitivity and intrinsic spatial resolution can achieve around 50.0%,10 5and 0.18 mm(along X-axis) respectively.For the detector,air coupling position resolution is better than the silicone oil coupling.Some of the simulation results are compared with experimental results.They are in agreement.This work will be helpful for constructing neutron detector for high intensity powder diffractometer at Chinese spallation neutron source.