Bias voltage dependence of inverted magnetoresistance on the annealing temperature in MgO-based magnetic tunnel junctions

MgO-based magnetic tunnel junctions (MTJs) with a layer sequence Ir₂₂Mn₇₈ or Fe₅₀Mn₅₀ (10 nm)/CoFe (2 nm)/Ru (0.85 nm)/CoFeB (0.5?t<2 nm)/MgO (2.5 nm)/CoFeB (3 nm) have been fabricated. The bias voltage dependence of tunneling magnetoresistance (TMR) is given as a function of the annealing temperature for these MTJs, which shows the TMR ratio changes its sign from inverted to normal at a critical bias voltage (V_C) when an unbalanced synthetic antiferromagnetic stack CoFe/Ru/CoFeB is used. V_Cs change with the thickness of the pinned CoFeB and annealing temperature, which implies one can achieve different V_Cs by artificial control. The asymmetric V_C values suggest that a strong density-of-states modification occurs at bottom oxide/ferromagnet interface.     

Relative electron inelastic mean free paths for diamond and graphite at 8 keV and intrinsic contributions to the energy-loss

We used hard X-ray photoelectron spectroscopy (HAXPES) with 8 keV X-rays to investigate the 1s emission of carbon. We recorded spectra extending from the peak of the C 1s electrons (“elastic” line) to electrons with up to 110 eV energy-loss. Using two samples side by side, we could compare the inelastic mean free paths (IMFPs) of the electrons of almost 8 keV in diamond and graphite and find them to be practically identical despite about 50% difference in densities. Published extrapolations of their IMFP calculations at lower energies are in good agreement with this result. We show that information from the almost structureless region of overlapping multiple extrinsic energy-losses can be used to quantify the fraction of photoelectrons experiencing intrinsic energy-losses (those due to the sudden creation of the hole). We find that this fraction is 58% of the primary excited C 1s electrons for diamond and is practically the same for graphite. This is at first sight an unexpected result since hole-screening should differ in a semimetal from that in an insulator. The observation can be accounted for by dynamic screening in contrast to static screening.     

Effect of strain and nonparabolicity on interband transition energies of InAs/GaAs coupled double quantum dots

Strained potential profiles and electronic subband energies of InAs/GaAs coupled double quantum dots (DQDs) were calculated by using a three-dimensional finite-difference method (FDM) taking into account shape-based strain and nonparabolic effects. The interband transition energies from the ground electronic subband to the ground heavy-hole band (E₁-HH₁) in the InAs/GaAs DQDs, as determined from the FDM calculations taking into account strain and nonparabolic effects, were in reasonable agreement with the experimental peaks corresponding to the (E₁-HH₁) interband transition energies at several temperatures, as determined from the temperature-dependent photoluminescence spectra.     

Enhanced coercivity in sponge magnets with three dimensionally ordered nanopores

Nanoporous magnets are new promising materials particularly useful in biological assays and ion separations. This letter deals with a simple method for making porous magnets composed of cobalt ferrite, where polymer colloidal spheres were used as sacrificial templates. Compared with the bulk congener the porous cobalt ferrite shows enhancements in coercive field and magnetization, which could be associated with the presence of nanopores ordered three dimensionally. Using the sponge magnet complete removal of magnetic Cu and Fe ions was achieved while partial removal was observed with porous silicate having the same size of nanopores.     

Pigment identification and decoration analysis of a 5th century Chinese lacquer painting screen: a micro‐Raman and FTIR study

To investigate the pigments and decoration applied to a wood‐based lacquer painting screen from the tomb of Si‐ma Jin‐long, Shanxi Province, central China, made by Chinese craftsmen in the 5th century, a combination of micro‐Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), wavelength dispersive X‐ray fluorescence (WDXRF), and microscopic examination was used. The obtained results are as follows: (1) the black, yellow, and red colors are identified as carbon black, orpiment and realgar, and cinnabar, respectively, by using micro‐Raman spectroscopy. The FTIR result shows that the white pigment filled in the leaves is not lead white, as assumed in the literature, but gypsum. Whether lead white was used at other locations remains unanswered and requires more samples for further work; (2) the thickness of each discernable pigment layer, as observed under the microscope, is approximately equal and the differences among them are small, suggesting a superfine painting skill; besides, a noticeable smooth interface between wood and the red grounding substance indicates that a polishing process might have been applied before the painting; (3) the red background was proved to contain cinnabar, but further FTIR analyses found no evidence for the presence of Chinese wood oil; and (4) the most interesting finding, rarely reported before, is that white grains of different sizes are found in both pigment layers and the grounding substance, which are perhaps an intentional addition. Further, in situ XRF and Raman analyses indicate that they are sourced from hydroxyapatite, coming probably from the intentional addition of animal bone ash to the lacquer. But how such a process could be finished and what purpose it served have not yet been answered. Copyright © 2009 John Wiley & Sons, Ltd.     

Dependence of intermediated noble metals on the optical and electrical properties of ITO/metal/ITO multilayers

Sn doped In₂O₃ (ITO) single layer and a sandwich structure of ITO/metal/ITO (IMI) multilayer films were deposited on a polycarbonate substrate using radio-frequency and direct-current magnetron sputtering process without substrate heating. The intermediated metal films in the IMI structure were Au and Cu films and the thickness of each layer in the IMI films was kept constant at 50 nm/10 nm/40 nm. In this study, the ITO/Au/ITO films show the lowest resistivity of 5.6 × 10⁻⁵ Ω cm.However the films show the lower optical transmission of 71% at 550 nm than that (81%) of as deposited ITO films. The ITO/Cu/ITO films show an optical transmittance of 54% and electrical resistivity of 1.5 × 10⁻⁴ Ω cm. Only the ITO/Au/ITO films showed the diffraction peaks in the XRD pattern. The figure of merit indicated that the ITO/Au/ITO films performed better in a transparent conducting electrode than in ITO single layer films and ITO/Cu/ITO films.     

Method of state code matrixes in the realization of optical switching using Perfect Shuffle

Based on the Left Perfect Shuffle (LPS) optical communication network constructed by cascade multi-stage LPS interconnection, using Looping algorithm, any arbitrary sequence of the input signals can be realized. However, instead of obtaining the simultaneous state codes of the same level node switches through mathematical analytical expressions directly, only routing tags of each channel can be obtained through mathematical analytical expressions so as to draw out topological chart of the network to obtain the state codes implied in the chart. Thus, the states of the switches cannot be directly programmed and controlled by computer in practical application. In this paper, based on the Looping algorithm, a method of stage code matrixes is presented to resolve this problem. By using the method, the simultaneous state codes of the same level’s four node switches can be directly obtained, which is convenient for the computer to provide controlled signals needed to finish the permutation for each node switch. The method of stage code matrixes provides further theoretical basis for the realization of optical switching by integration of Perfect Shuffle and high-speed optical switches.     

Irreversible structural transformation of Si(1 1 4)-2 × 1 induced by subsurface carbon

Using scanning tunneling microscopy (STM), it has been found that the reconstruction of Si(1 1 4) is transformed irreversibly from a 2 × 1 structure composed of dimer (D), rebonded atom (R), and tetramer (T) rows (phase A) to a different kind of 2 × 1 structure composed of D, T, and T rows (phase B) by C incorporation. It has been confirmed by high-resolution synchrotron core-level photoemission spectroscopy (PES) that such an irreversible structural transformation is due to stable subsurface C atoms. They induce anisotropic compressive stress on the surface, which results in insertion of Si dimers to an R row to form a T row.     

基于Lyapunov方程的分数阶混沌系统同步

对阶次小于1的分数阶系统提出了基于Lyapunov方程的系统稳定性判定理论. 将该理论应用于分数阶混沌系统的同步,实现了未知参数的分数阶Lorenz混沌系统的自适应同步. 仿真结果证实了该理论的正确性. 关键词： 分数阶混沌系统 同步 Lyapunov方程 自适应