Recombination induced hypergraphs: A new approach to mutation-recombination isomorphism

Natural selection acts on genetic variation that comes from two principal sources: mutation and recombination. Because of the inherent differences between mutation and recombination, it is often assumed that they are qualitatively different ways to explore the genotype space. In this paper a new way of constructing recombination spaces is introduced and the topological features of the resulting hypergraphs are analyzed. It is shown that types which are neighbors in the point mutation space are also neighbors in the recombination space, i.e., mutation and recombination spaces are homomorphic. This implies that the shapes of the fitness functions explored by mutation and recombination are similar. However, the potential of one- and two-point recombination operators to explore the fitness landscape may differ dramatically from uniform recombination operators or mutation operators because of the limited number of recombinant types they can produce. © 1996 John Wiley & Sons, Inc.     

Defect Structure in Te-doped GaAs Single Crystals after Plastic Deformation (II). Dislocation Slip and Cell Formation

At temperatures above the brittle-to-ductile transition (490 °C) in Te-doped GaAs three types of predominant defect configurations have been observed after uniaxial compression along a [001] direction: (i) twins and stacking faults (500 … 520 °C), (ii) slip zones of dislocations (≈550 °C) and (iii) dislocation cells (580 … 590 °C). In Part II quantitative details of the appearance of slip and cell formation are given. Leading segments of gliding half loops are mainly of 60° type. Cell walls were formed by multiple slip of perfect dislocations.