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141.
We present a first-principles study of the geometrical and electronic structures of a hexagonal single-walled silicon nanotube with a monovacancy or a substitutional defect. The B, C, N, Al and P atoms are chosen as substitutional impurities. It is found that the defect such as a monovacancy or a substitutional impurity results in deformation of the hexagonal single-walled silicon nanotube. In both cases, a relatively localized unoccupied state near the Fermi level occurs due to this local deformation. The differences in geometrical and electronic properties of different substitutional impurities are discussed. 相似文献
142.
Y. C. Chou E. Cho T. -h. Chou T. M. Hong 《The European physical journal. E, Soft matter》2009,29(2):157-161
By measuring the distribution function of the end-to-end distance, we find that strongly shaken bead chains exhibit many properties,
such as the rigid-rod-to-Gaussian chain transition, scaling, fast drop of loop formation probability in the short-chain regime,
and enhancement of loop formation probability for kinked chains, of long-chain polymers. Though there is difference in local
details between our chains and the worm-like chains, our results are consistent with recent calculations based on the worm-like
chain model in many respects. 相似文献
143.
144.
Hongxi Liu Hong Qiu Xiaobai Chen Mingpeng Yu Mingwen Wang 《Current Applied Physics》2009,9(6):1217-1222
ZnO:Al films were deposited on glass substrates at 300 K and 673 K by direct current magnetron sputtering with the oblique target. The Ar pressure was adjusted to 0.4 Pa and 1.2 Pa, respectively. All the films have a wurtzite structure and grow with a c-axis orientation in the film growth direction. The films grow mainly with columnar grains perpendicular to the substrate and some granular grains also exist in the films. The film deposited at 673 K and 0.4 Pa has the largest grains whereas that prepared at 300 K and 0.4 Pa consists of the smallest grains and is porous. The films exhibit an n-type semiconducting behavior at room temperature. The ZnO:Al film deposited at 673 K and 0.4 Pa has the lowest resistivity (3.40 × 10−3 Ω cm), the highest free electron concentration (4.63 × 1020 cm−3) and a moderate Hall mobility (4.0 cm2 V−1 s−1). The film deposited at 300 K and 0.4 Pa has the highest resistivity and the lowest free electron concentration and Hall mobility. A temperature dependence of the resistivity reveals that the carrier transport mechanism is Mott’s variable range hopping in the temperature region below 100 K and thermally activated band conduction above 215 K. The activation energy for the film deposited at 300 K and 0.4 Pa is 41 meV and that for the other films is about 35 meV. All the films have an average optical transmittance of over 85% in the visible wavelength range. The absorption edge of the film deposited at 300 K and 0.4 Pa shifts to the longer wavelength (redshift) relative to the films prepared under the other conditions. 相似文献
145.
Study of theoretical tensile strength of Fe by afirst-principles computational tensile test 下载免费PDF全文
This paper employs a first-principles total-energy method to
investigate the theoretical tensile strengths of bcc and fcc Fe
systemically. It indicates that the theoretical tensile strengths
are shown to be 12.4, 32.7, 27.5~GPa for bcc Fe, and 48.1, 34.6,
51.2~GPa for fcc Fe in the [001], [110] and [111] directions,
respectively. For bcc Fe, the [001] direction is shown to be the
weakest direction due to the occurrence of a phase transition from
ferromagnetic bcc Fe to high spin ferromagnetic fcc Fe. For
fcc Fe, the [110] direction is the weakest direction due to the
formation of an instable saddle-point `bct structure' in the tensile
process. Furthermore, it demonstrates that a magnetic instability
will occur under a tensile strain of 14%, characterized by the
transition of ferromagnetic bcc Fe to paramagnetic fcc Fe.
The results provide a good reference to understand the intrinsic
mechanical properties of Fe as a potential structural material in
the nuclear fusion Tokamak. 相似文献
146.
This paper reports that the organic field-effect transistors with
hybrid contact geometry were fabricated, in which the top electrodes
and the bottom electrodes were combined in parallel resistances
within one transistor. With the facility of the novel structure, the
difference of contact resistance between the top contact geometry
and the bottom contact geometry was studied. The hybrid contact
devices showed similar characteristics with the top contact
configuration devices, which provide helpful evidence on the lower
contact resistance of the top contact configuration device. The
origin of the different contact resistance between the top contact
device and the bottom contact device was discussed. 相似文献
147.
148.
149.
用原子吸收光谱法测定了刺五加根、茎、叶中Ca、Cu、Mg、Fe、Zn、K、Mn、Na等8种矿物质元素的含量,并对其结果进行了分析比较,以此研究了这8种金属元素在刺五加体内的分布。结果显示:各元素在实验范围内,线性关系良好,加标回收率在99%—109.6%之间,相对标准偏差为0.2%—1.8%。刺五加中不同部位的这8种元素间存在显著差异,根中Ca〉Mg〉K〉Fe〉Na〉Mn〉Zn〉Cu,其叶中的含量以K为高,而且各部位均有较高的Ca、Cu、Mg、Fe、Zn、K、Mn、Na。从微量元素的角度分析,刺五加的根、茎、叶均有一定的应用价值。 相似文献
150.
A scheme for photonic generation of ultra-wideband (UWB) pulses using a semiconductor optical amplifier (SOA) and an electro-absorber (EA) in parallel is proposed and numerically demonstrated. By adjusting the time delay between two pump signals incident into the SOA and the EA, we can obtain monocycle pulses with reversed polarities and different bandwidths. The proposed method is flexible in pulse shaping and easy in practical optimization. 相似文献