两束啁啾脉冲控制下的H+D+光缔合反应研究

从理论上研究了两束啁啾脉冲控制H+D⁺的光缔合反应. 第一束脉冲用来加速碰撞伴的碰撞速度,第二束脉冲用来增加产物HD⁺的产率. 结果表明:第一束脉冲的参数决定了第二束脉冲的优化参数以及产物HD⁺的布居. 产物的布居可以通过调节两束脉冲的延迟时间得到控制. 关键词： 光缔合 +分子')" href="#">HD⁺分子 啁啾脉冲 波包     

激光溅射Ni等离子体与气相CH3OH团簇的反应

用激光溅射 分子束技术研究了气相中Ni的等离子体与甲醇分子团簇的反应 .观察到Ni+ (CH3 OH) n、NiO+ (CH3 OH) n、H+ (CH3 OH) n、H3 O+ (CH3 OH) n 四个种类的团簇正离子和CH3 O-(CH3 OH) n(n≤ 2 5 )一种团簇负离子 .详细考察了激光烧蚀等离子体作用于脉冲分子束的不同位置时 ,对团簇产物种类和团簇尺寸大小的影响 .发现NiO+ (CH3 OH) n 是由Ni+ (CH3 OH) n 团簇内的脱甲烷反应生成的 ,而H+ (CH3 OH) n、H3 O+ (CH3 OH) n主要是激光等离子体中的电子与甲醇团簇碰撞电离产生的     

Monte Carlo simulation of the dynamic evolution ofbinary lamellar eutectic in directional solidification

The dynamic evolution of the lamellar eutectic of binary alloys in directional solidification is studied in detail using the Monte Carlo technique. The simulated results can be summarized into two aspects: ({1}) the lamellar spacing λ is found to be inversely proportional to the chemical potential difference Δμ, predicting a linear relationship between the kinetic supercooling ΔT_k and total supercooling at the solid/liquid (S/L) interface; (2) as the solidifying velocity R is low, the dynamic product λ^{2}R shows a considerable dependence on temperature gradient G_T in the liquid in front of the S/L interface, although this dependence becomes much weaker at a high R.     

1064 nm激光对中性密度滤光片的损伤机理研究

中性密度滤光片的典型结构是在K9玻璃上镀金属膜,来实现对激光的有效吸收.由于损伤阈值较低,严重限制了其在高能激光系统中的应用.实验研究了较高激光能量密度下滤光片的损伤形貌和损伤机理.损伤形貌的变化特征是:随着激光能量密度的增加,滤光片先出现损伤点,后以损伤点为中心产生裂纹,且裂纹长度逐渐变长,最终连接成线状和块状,导致大面积的薄膜脱落.建立了缺陷吸收激光能量升温致中性密度滤光片表面薄膜损伤的模型,计算了薄膜表面的温度和应力分布,讨论了薄膜表面不均匀温升造成的径向、环向和轴向热应力分布.理论分析显示:环向应力是造成薄膜沿径向产生裂纹的主要原因.当激光能量密度大于约2.2 J/cm²,杂质粒子半径大于140 nm且相邻杂质粒子之间的距离小于10 μ m时,裂纹才能大量连接起来引起薄膜的大面积脱落.     

利用ICCD定位宇宙线来测量探测器时间分辨的方法研究

本研究采用双层150 mm×150 mm闪烁条阵列定位宇宙线的入射和出射位置. 阵列信号光使用波移光纤吸收传输,在ICCD相机前插入前置像增强器,使信号光延迟大于200 ns, 使ICCD可以由外部高速触发信号控制,有效记录随机触发事例.该宇宙线定位系统可以同时多点密集测量 通用探测器测试平台的时间分辨和闪烁光的渡越时间.该新方法与传统时间分辨测量方法相比提高了30倍以上 的效率.实验结果显示:时间探测器的时间分辨好于200 ps,满足通用探测器测试平台的设计要求.     

两束重合脉冲控制下的振转态布居转移

利用两束频率比为1:3的重合脉冲控制分子振转态布居转移. 计算结果表明, 初始态|0,0>到目标态|3,1>的跃迁概率接近100%. 两束脉冲的相位可以控制跃迁概率. 当φ ₁ =1.68 π 时, 两束脉冲相互增强, 跃迁概率增加. 当φ ₁ =0.64π 时, 两束脉冲相互抵消, 跃迁概率降低. 第二束脉冲的场强对布居转移过程具有较大影响.     

Carrier-envelope phase dependence of the duration of generated solitons for few-cycle rectangular laser pulses propagation

We investigate the nonlinear propagation of few-cycle rectangular laser pulses on resonant intersubband transitions in semiconductor quantum wells using an iterative predictor–corrector finite-difference time-domain method. An initial 2π rectangular pulse will split into Sommerfeld–Brillouin precursors and a self-induced transparency soliton during the course of propagation. The duration of generated soliton depends on the carrier-envelope phase of the incident pulse. In our case, not only the near-resonant frequency components but also the low frequency components could contribute to the generation of the soliton pulse when the condition of multi-photon resonance is satisfied. The phase-sensitive property of the solitons results from the phase-dependent distribution of high and low frequency sidebands of few-cycle rectangular pulses.     

Quantum steganography with large payload based on entanglement swapping of χ-type entangled states

In this paper, we firstly propose a new simple method to calculate entanglement swapping of χ-type entangled states, and then present a novel quantum steganography protocol with large payload. The new protocol adopts entanglement swapping to build up the hidden channel within quantum secure direct communication with χ-type entangled states for securely transmitting secret messages. Comparing with the previous quantum steganographies, the capacity of the hidden channel is much higher, which is increased to eight bits. Meanwhile, due to the quantum uncertainty theorem and the no-cloning theorem its imperceptibility is proved to be great in the analysis, and its security is also analyzed in detail, which is proved that intercept-resend attack, measurement-resend attack, ancilla attack, man-in-the-middle attack or even Dos(Denial of Service) attack couldn't threaten it. As a result, the protocol can be applied in various fields of quantum communication.     

Synthesis and electrochemical characteristics of Ta-N thin films fabricated by cathodic arc deposition

Ta-N thin films were deposited on AISI 317L stainless steel (SS) substrates by cathodic arc deposition (CAD) at substrate biases of −50 and −200 V. The as-deposited films were characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray analysis (EDX). The results show that stoichiometric TaN with hexagonal lattice (3 0 0) preferred orientation was achieved at the bias of −200 V. On the other hand, Ta-rich Ta-N thin film deposited at −50 V shows amorphous nature. According to the XPS result, Ta element in the films surface exist in bonded state, including the Ta-N bonds characterized by the doublet (Ta 4f_7/2 = 23.7 eV and Ta 4f_5/2 = 25.7 eV). Electrochemical properties of the Ta-N coated stainless steel systems were investigated using potentiodynamic polarization and electrochemical impedance spectroscope (EIS) in Hank's solution at 37 °C. For the Ta-N coated samples, the corrosion current (i_corr) is two or three orders of magnitude lower than that of the uncoated ones, indicating a significantly improved corrosion resistance. Growth defects in the Ta-N thin films produced by CAD, however, play a key role in the corrosion process, especially the localised corrosion. Using the polarization fitting and the EIS modelling, we compared the polarization resistance (R_p) and the porosity (P) of the Ta-N coatings deposited at different biases. It seems that Ta-N film with comparatively lower bias (−50 V) shows better corrosion behavior in artifical physiological solution. That may be attributed to the effect of ion bombarding, which can be modulated by the substrate bias.