First-principles study on the geometric and electronic structures and phase transition of PbZr1-xTixO3 solid solutions

With first-principles virtual-crystal approximation calculations, we systematically investigate the geometric and elec- tronic structures as well as the phase transition of lead zirconate titanate (PbZr1-xTixO3 or PZT) as a function of Ti content for the whole range of 0 ≤ x Ti ≤ 1. It can be found that, with the increase of the Ti content, the PbZr1-xTixO3 solid solu- tions undergo a rhombohedral-to-tetragonal phase transition, which is consistent with the experimental results. In addition, we also show the evolution in geometric and electronic structures of rhombohedral and tetragonal PbZr1-x TixO3 with the increasing content of Ti.     

The giant enhancement of Fano-type resonance in a gain-assisted silicon slab array

Giant resonance enhancement is demonstrated to be due to the Fano interference in a grating waveguide composed of gain-assisted silicon slabs. The Fano mode is characterized by its ultra-narrow asymmetric spectrum, different from that of a pure electric or magnetic dipole. The simulation indicates that a sharp Fano-interfered lineshape is responsible for the giant resonance enhancement featuring the small-gain requirements.     

Small amplitude approximation and stabilities for dislocation motion in a superlattice

Starting from the traveling wave solution, in small amplitude approximation, the Sine-Gordon equation can be re- duced to a generalized Duffing equation to describe the dislocation motion in a superlattice, and the phase plane properties of the system phase plane are described in the absence of an applied field. The stabilities are also discussed in the presence of an applied field. It is pointed out that the separatrix orbit describing the dislocation motion as the kink wave may transfer the energy along the dislocation line, keep its form unchanged, and reveal the soliton wave properties of the dislocation motion. It is stressed that the dislocation motion process is the energy transfer and release process, and the system is stable when its energy is minimum.     

分数阶Chua's系统错位同步无感模块化电路实现及应用

基于分数阶混沌系统稳定性理论, 设计高效的非线性控制器, 实现初始值不同的两个分数阶Chua's系统错位投影同步. 根据分数阶复频域近似方法, 提出分数阶系统的等效电路, 实现分数阶Chua's系统错位投影同步的无感模块化电路. 最后,利用改进的混沌掩盖通信原理, 将以上同步方案应用于混沌保密通信中, 在发送端使用分数阶混沌序列对有用信号加密传送, 从接收端可以无失真地恢复出有用信号. 数值仿真与电路仿真证实了提出方案的可行性. 关键词： 分数阶Chua's系统 错位投影同步 无感模块化电路 保密通信     

基于耦合Duffing振子的局部放电信号检测方法研究

以双向环形耦合Duffing振子系统为对象, 研究脉冲信号激励下耦合振子间动力学行为变化特征时, 发现其与单向环形耦合Duffing振子系统类似, 在一定的参数条件下, 脉冲信号能引起其中一个振子与其他振子运动轨迹间出现短暂失同步的现象即瞬态同步突变现象. 基于这种现象, 提出了一种微弱脉冲信号检测的新方法, 用于检测强噪声背景中的局部放电脉冲信号. 实验测试表明, 利用本文方法对不同放电电极的局部放电脉冲信号进行检测时, 在低信噪比条件下可取得良好的检测效果, 进而扩展了现有的Duffing振子对非周期信号的检测范围及应用领域. 关键词： 耦合Duffing 振子 微弱信号检测 瞬态同步突变 局部放电脉冲信号     

Simulation of Three-Spin Interaction in Coupled Cavities Chain

We generalize usual second-order effective Hamiltonian approximation into third-order. Employing the generalized method, we propose a scheme to generate three-spin interaction using coupled cavity chain. We show that the third order term not only improves two parties interaction but also induces direct three-spin interaction which has not been simulated before. By controlling the frequency of laser field, one can obtain next nearest neighbor interaction on the same order with the nearest neighbor’s or the three-spin interaction on the same order as next nearest neighbor’s.     

新型宽温区高热稳定性微波功率SiGe 异质结双极晶体管

宽温区大电流下的热不稳定性严重制约着功率SiGe 异质结双极晶体管 (HBT) 在射频和微波电路中的应用.为改善器件的热不稳定性, 本文利用SILVACO TCAD建立的多指功率SiGe HBT模型, 分析了器件纵向结构中基区Ge组分分布对微波功率SiGe HBT电学特性和热学特性的影响. 研究表明, 对于基区Ge组分为阶梯分布的HBT, 由于Ge组分缓变引入了少子加速电场, 使它与均匀基区Ge组分HBT相比, 具有更高的特征频率f_T, 且电流增益β和f_T随温度变化变弱, 这有利于防止器件在宽温区工作时电学特性的漂移.同时, 器件整体温度有所降低, 但器件各指温度分布均匀性较差.考虑多指HBT各发射极指散热能力存在差异, 在器件纵向结构设计为基区Ge组分阶梯分布的同时, 对其横向版图进行发射极指间距渐变结构设计, 用于改善器件各指温度分布的均匀性, 进而提高HBT的热稳定性.结果表明, 与基区Ge组分为均匀分布的等发射极指间距结构HBT相比, 新器件各指温度分布均匀性明显改善, f_T保持了较高的值, 且β和f_T 随温度变化不敏感, 热不稳定性得到显著改善, 显示了新器件在宽温区大电流下工作的优越性. 关键词： SiGe 异质结双极晶体管 Ge组分分布 发射极指间距渐变技术 热稳定性     

非均匀性对单层膜光学特性的影响

探讨了不同规律的非均匀性对单层膜的光谱特性的影响,与均匀单层膜对比发现：折射率正变引起透射率的极大值减小,折射率负变引起透射率的极大值变大,当非均匀性很小时,透射率的极小值基本不变.对实验制备的单层膜从实验和理论上进行了对比并给出了较好的拟合,发现在薄膜和基底的界面处存在一过渡层,过渡层可近似为线性,并从理论上给予了分析解释.     

双轴晶体会聚偏光干涉的理论与实验研究

晶体会聚偏光干涉图包含了晶体特性的许多信息,建立偏光干涉图的定量分析方法可以使这些信息得到充分利用。基于双轴晶体折射时满足的波矢关系,导出了两折射光波相位差的精确计算公式。分析了光波在各界面折射时偏振态的变化,提出了会聚偏光干涉合成振幅的计算方法。针对任意取向的双轴晶体,计算了完整的偏光干涉图,反映了相位分布决定等色线、振幅分布决定消光影的规律。用数字图像模似了干涉图,并讨论了干涉图的变化情况。对4块不同取向的KTP晶片进行实验,实验干涉图与理论干涉图的特征完全一致,两者仔细对比可判断现有KTP晶体色散方程的优劣。     

具有存储功能的衍射图像光刻系统的研制

研制了一种在衍射光变图像器件上进行信息存储的新型数字化激光光刻系统。采用空间光调制器作图形自动输入,双远心投影成像系统在光刻记录面上缩微图形。通过光栅干涉光学头对记录面上的微图形进行干涉调制,使微图形上产生干涉条纹,条纹空间频率范围为500-1200lp／mm。在光刻胶干版上的存储实验表明,在衍射光变图像上的单角度存储信息密度大于3．7Mbit／cm^2。改变干涉条纹取向、条纹间隔和需要存储的图形,光刻系统可实现信息的旋转复用存储。上述光刻系统将会在防伪和衍射光变图像器件制造领域有良好应用。