Blue-violet luminescence double peak of In-doped films prepared by radio frequency sputtering

ZnO films doped with different contents of indium were prepared by radio frequency sputtering technique. The structural, optical and emission properties of the films were characterized at room temperature using XRD, XPS, UV-vis-NIR and PL techniques. Results showed that the indium was successfully incorporated into the c-axis preferred orientated ZnO films, and the In-doped ZnO films are of over 80% optical transparency in the visible range. Furthermore, a double peak of blue-violet emission with a constant energy interval (∼0.17 eV) was observed in the PL spectra of the samples with area ratio of indium chips to the Zn target larger than 2.0%. The blue peak comes from the electron transition from the Zn_i level to the top of the valence band and the violet peak from the In_Zn donor level to the V_Zn level, respectively.     

Investigation of the near-threshold cluster resonance in ~(14)C

An experiment for p(~(14)C,~(14)C~*→~(10)Be+α)p inelastic excitation and decay was performed in inverse kinematics at a beam energy of 25.3 Me V/u.A series of~(14)C excited states,including a new one at 18.3(1)Me V,were observed which decay to various states of the final nucleus of~(10)Be.A specially designed telescope system,installed around zero degrees,played an essential role in detecting the resonant states near theα-separation threshold.A state at 14.1(1)Me V is clearly identified,being consistent with the predicted band-head of the molecular rotational band characterized by theπ-bond linear chain configuration.Further clarification of the properties of this exotic state is suggested by using appropriate reaction tools.     

再循环重力供液蒸发器管内换热性能预测

为了找出适用于再循环重力供液蒸发器管内强制对流沸腾换热系数的关系式,通过对以R404A为制冷剂的重力供液实验台的研究,编程计算出J.Chawla关系式及Shah关联式对重力供液沸腾换热系数进行预测值。与实验结果比较可知:J.Chawla关系式在较低温度下较接近于实验值,Shah关联式在较高的温度下可以对实验值进行预测,两种关系式相结合的方法就可以较好对重力供液蒸发器管内沸腾换热进行预测。     

Nonlinear optical properties of Cu nanoclusters by ion implantation in silicate glass

Metal nanocluster composite glass prepared by 180 keV Cu ions into silica with dose of 1 × 10¹⁷ ions/cm² has been studied. The microstructural properties of the nanoclusters were analysed by optical absorption spectra and transmission electron microscopy (TEM). Third-order nonlinear optical properties of the nanoclusters were measured at 1064 nm and 532 nm excitations using Z-scan technique. The nonlinear refraction index, nonlinear absorption coefficient, and the real and imaginary parts of the third-order nonlinear susceptibility were deduced. The mechanisms responsible for the nonlinear response were discussed. Absolute third-order nonlinear susceptibility χ⁽³⁾ of this kind of sample was determined to be 2.1 × 10⁻⁷ esu at 532 nm and 1.2 × 10⁻⁷ esu at 1064 nm, respectively.     

Photocurrent analysis of organic photovoltaic cells based on CuPc/C60 with Alq3 as a buffer layer

The performance of an organic photovoltaic(OPV) cell based on copper phthalocyanine CuPc/C60 with a tris(8-hydroxyquinolinato) aluminum(Alq3) buffer layer has been investigated.It was found that the power conversion efficiency of the device was 1.51% under illumination with an intensity of 100 mW/cm2,which was limited by a squareroot dependence of the photocurrent on voltage.The photocurrent-optical power density characteristics showed that the OPV cell had a significant space-charge limited photocurrent with a varied saturation voltage and a three quarters power dependence on optical power density.Also,the absorption spectrum was measured by a spectrophotometer,and the results showed that the additional Alq3 layer has a minor effect on photocurrent generation.     

Towards Fabrication of Atomic Dopant Wires via Monolayer Doping Patterned by Resist-Free Lithography

Fabrication of atomic dopant wires at large scale is challenging.We explored the feasibility to fabricate atomic dopant wires by nano-patterning self-assembled dopant carrying molecular monolayers via a resist-free lithographic approach.The resist-free lithography is to use electron beam exposure to decompose hydrocarbon contaminants in vacuum chamber into amorphous carbon that serves as an etching mask for nanopatterning the phosphorus-bearing monolayers.Dopant wires were fabricated in silicon by patterning diethyl vinylphosphonate monolayers into lines with a width ranging from 1 μm down to 8 nm.The dopants were subsequently driven into silicon to form dopant wires by rapid thermal annealing.Electrical measurements show a linear correlation between wire width and conductance,indicating the success of the monolayer patterning process at nanoscale.The dopant wires can be potentially scaled down to atomic scale if the dopant thermal diffusion can be mitigated.     

Determination of the cluster spectroscopic factor of the 10.3 MeV state in 12Be

From an inelastic excitation and breakup experiment with a ¹²Be beam at 29 MeV/u, a large ⁴He+⁸He cluster decay width of 1.1(2) MeV is determined for a state at an excitation energy of 10.3 MeV and with a spin parity of 0+. By using the R-matrix analysis, a cluster spectroscopic factor of 0.53(10) is extracted from the cluster partial width, providing a strong support for the clustering structure in ¹²Be. A specially designed zero-degree telescope played an essential role in the present experiment and has been demonstrated to be a promising tool in future studies of the molecular-like resonances near the cluster separation threshold.