全文获取类型
收费全文 | 22490篇 |
免费 | 3669篇 |
国内免费 | 4033篇 |
专业分类
化学 | 18480篇 |
晶体学 | 390篇 |
力学 | 947篇 |
综合类 | 292篇 |
数学 | 2277篇 |
物理学 | 7806篇 |
出版年
2024年 | 47篇 |
2023年 | 364篇 |
2022年 | 662篇 |
2021年 | 797篇 |
2020年 | 886篇 |
2019年 | 913篇 |
2018年 | 773篇 |
2017年 | 872篇 |
2016年 | 1149篇 |
2015年 | 1230篇 |
2014年 | 1504篇 |
2013年 | 1847篇 |
2012年 | 2231篇 |
2011年 | 2348篇 |
2010年 | 1737篇 |
2009年 | 1583篇 |
2008年 | 1770篇 |
2007年 | 1560篇 |
2006年 | 1434篇 |
2005年 | 1121篇 |
2004年 | 836篇 |
2003年 | 692篇 |
2002年 | 772篇 |
2001年 | 648篇 |
2000年 | 461篇 |
1999年 | 434篇 |
1998年 | 268篇 |
1997年 | 224篇 |
1996年 | 154篇 |
1995年 | 148篇 |
1994年 | 106篇 |
1993年 | 114篇 |
1992年 | 89篇 |
1991年 | 81篇 |
1990年 | 52篇 |
1989年 | 53篇 |
1988年 | 44篇 |
1987年 | 42篇 |
1986年 | 41篇 |
1985年 | 29篇 |
1984年 | 11篇 |
1983年 | 11篇 |
1982年 | 12篇 |
1981年 | 7篇 |
1980年 | 6篇 |
1979年 | 3篇 |
1978年 | 4篇 |
1975年 | 4篇 |
1959年 | 3篇 |
1957年 | 5篇 |
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
31.
A new method for controlling the quantum coherence of atom laser by applying input light with strong strength is presented
within the framework of quantum dynamical theory. Unlike the case of rotating wave approximation(RWA), we show that the non-classical
properties, such as sub-Poisson distribution and quadrature squeezed effect, can appear in the output atom laser beam with
time. By choosing suitable initial RF phase, a steady and brighter output of squeezed coherent atom laser is also available. 相似文献
32.
用多靶磁控溅射技术制备了Au/SiO2纳米多层薄膜.利用透射电子显微镜以及吸收光谱对Au/SiO2复合薄膜的微观结构、表面形貌及光学性能进行了表征和测试.研究结果表明:单层Au/SiO2薄膜中Au沉积时间小于10s时,分散在SiO2中的Au颗粒随Au的沉积时间的延长而增大;当沉积时间超过10s后,Au颗粒的尺寸几乎不随沉积时间变化,但Au颗粒的形状由网络状结构变为薄膜状结构.[Au(t1)SiO2(600)]×5多层薄膜在540-560nm波长附近有明显的表面等离子共振吸收峰,且吸收峰的强度随Au的沉积时间增加而增强.基于修正后的Maxwell-Garnett (M-G)有效媒质理论,讨论了金属颗粒的形状对等离子共振吸收峰的峰位和强度的影响.模拟的吸收光谱与实验吸收光谱形状、趋势及吸收峰位相符合. 相似文献
33.
本文对特征P的基域F引入适当的Galois群T,讨论p置换模的Green环的Conlon比析在Galois群T作用下的动态,证明了在T作用下p置换模的Green环的不动点集重合于置换模的Green环。 相似文献
34.
利用多靶磁控溅射技术制备了Au/SiO2纳米颗粒分散氧化物多层复合薄膜.研究了在保持Au单层颗粒膜沉积时间一定时薄膜厚度一定、变化SiO2的沉积时间及SiO2的沉积时间一定而改变薄膜厚度时,多层薄膜在薄膜厚度方向的微观结构对吸收光谱的影响.研究结果表明:具有纳米层状结构的Au/SiO2多层薄膜在560nm波长附近有明显的表面等离子共振吸收峰,吸收峰的强度随Au颗粒的浓度增加而增强,在Au颗粒浓度相同的情况下,复合薄膜光学吸收强度随薄膜厚度的增加而增强.但当金属颗粒的浓度增加到一定程度时,金属颗粒相互接触,没有观察到纳米层状结构,薄膜不显示共振吸收峰特征.用修正后的M-G(Maxwell-Garnett)理论对吸收光谱进行了模拟,得到了与实验一致的结果. 相似文献
35.
GAO Jing ZHOU Xiaohua CHEN Xun Chongqing University Chemical Engineering Department Chongqing China 《Chinese Journal of Reactive Polymers》2006,(2)
1. INTRODUCTION In the process of coking plant, about 30%~35% sulfur is transformed to H2S and some other sulfide, which form impurity in coal gas together with NH3 and HCN. Only 0.1% H2S containing in air can lead to die, so it is very important to carry on desulphurization and decyanation with coal gas [1~3]. Currently desulphurization and decyanation craft technique have Dry Oxidation Technology, Wet Oxidation Technology and Liquid Absorption Technology [2] three main kinds. The… 相似文献
36.
37.
Bo Jin Xi Wang Jing Chen Feng Zhang Xinli Cheng Zhijun Chen 《Applied Surface Science》2006,252(16):5627-5631
The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si1−xGex (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si1−xGex (x is minimal) layer moved to Si/SiO2 interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM). 相似文献
38.
Theoretical and experimental investigations on the performance of micro-perforated -panel absorbers are reviewed in this paper. By reviewing recent research work, this paper reveals a relationship between the maximum absorption coefficient and the limit of the absorption frequency bandwidth. It has been demonstrated that the absorption frequency bandwidth can be extended up to 3 or 4 octaves as the diameters of the micro-holes decrease. This has become possible with the development of the technologies for manufacturing micro-perforated panels, such as laser drilling, powder metallurgy, welded meshing and electro-etching to form micrometer order holes. In this paper, absorption characteristics of such absorbers in random fields and in high sound intensity are discussed both theoretically and experimentally. A new absorbing structure based on micro-perforated-panel absorbers demonstrate experimentally high sound absorption capability. This review shows that the micro-perforated-panel absorber has potentials to be one of ideal absorbing materials in the 21st century. 相似文献
39.
40.
Solitary waves and their bifurcations of KdV like equation with higher order nonlinearity 总被引:3,自引:1,他引:2
We investigate the KdV like equation with higher order nonlinearity ut + a(1 +bun)unux + uxxx = 0with n ≥ 1, a, b ∈ R and α≠ 0. The bifurcations and explicit expressions of solitary wave solutions for theequation are discussed by using the bifurcation method and qualitative theory of dynamical systems. Thebifurcation diagrams, existence and number of the solitary waves are given. 相似文献