二维铁电材料α-In2Se3 表面分子束外延生长Pb 纳米岛的STM 研究

铁电材料拥有自发电极化, 不同的极化方向会对异质结的电子结构产生可逆的和非易失性的影响. 本工作采用分子束外延技术在二维铁电材料α-In2Se3 衬底上成功制备了 Pb 纳米岛构建 Pb/α-In2Se3 超导铁电异质结,并通过扫描隧道显微镜表征了其表面原子结构与电子结构. 进一步的扫描隧道谱测量显示不同层厚 Pb 岛的量子阱态消失, 并且我们在4.5 K 的温度下没有观察到超导能隙, 表明铁电衬底会影响 Pb 岛的电子结构, 甚至其超导特性. 这些发现为理解铁电衬底对超导性的影响提供了参考, 并为调控低维量子材料中的电子结构及超导性提供了新的思路.     

细胞松弛素B阻断微核法鉴定男性个体辐射敏感性的方法初探

初步研究了男性个体辐射敏感性的鉴定方法及标准.采集50名男性志愿者的外周血,分别给予不同剂量X射线照射,采用细胞松弛素B阻断双核法测定微核率(MNF),通过二阶多项拟合法,绘制微核剂量效应选项中心标准曲线,将个人微核剂量效应曲线与标准曲线比对后判断个体辐射敏感性.0.0～2.5 Gy剂量范围内,剂量效应二阶多项拟合的中...     

The existence and stability of bulk nanobubbles:a long-standing dispute on the experimentally observed mesoscopic inhomogeneities in aqueous solutions

In theory,nanobubbles can stably exist with a lifetime of microseconds at most,but numerous experimental observations demonstrate that nanobubbles in bulk solution can be stable from hours to weeks.Although various conjectures on the stability mechanism of bulk nanobubbles,such as the contaminant mechanism,skin mechanism,surface zeta potential mechanism,are proposed,there has not yet been a unified conclusion.Since bulk nanobubbles show great potential in a wide spectrum of applications and are relevant to a number of unsolved questions on cavitation and nucleation,the debate over their stability mechanisms has been active.In the past,extensive studies have been carried out to understand the mechanism of nanobubble stability,and important insights have already been provided.This paper will provide a brief overview of our current understanding of the unexpected stability of bulk nanobubbles.     

WO_3(001)表面活性氧物种的理论研究

采用第一性原理结合周期性平板模型的方法,对O_2在完整和缺陷WO_3(001)表面的吸附行为进行了研究.结果表明:WO_3(001)完整表面上吸附态的O_2不易成为表面氧化反应的活性氧物种,当吸附质与表面作用时,将优先与表面晶格氧(O_t)成键,进而形成表面缺陷态,体系呈现金属性,电导率增大.比较O_2在缺陷表面上各吸附构型的吸附能发现,O_2的吸附倾向于发生在缺陷位置(W_v)上,且表现为氧气分子中的两个氧原子均与缺陷位W_v作用,形成新的活性氧物种(O_2~-);吸附后表面被氧化,电导率降低.     

Deep level transient spectroscopy investigation of deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact

Deep levels in Cds/CdTe thin film solar cells have a potent influence on the electrical property of these devices. As an essential layer in the solar cell device structure, back contact is believed to induce some deep defects in the CdTe thin film. With the help of deep level transient spectroscopy (DLTS), we study the deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact. One hole trap and one electron trap are observed. The hole trap H1, localized at E_v+0.128~eV, originates from the vacancy of Cd (V_Cd. The electron trap E1, found at E_c-0.178~eV, is considered to be correlated with the interstitial Cu_i⁼ in CdTe.     

GaN基p-i-n型雪崩探测器的制备与表征

制备和表征了p-i-n型的GaN基雪崩探测器.器件在-5V下的暗电流约为0.05 nA,-20 V下的暗电流小于0.5 nA.响应增益-偏压曲线显示,可重复的雪崩增益起始于80 V附近,在85 V左右增益达到最大为120,表明所制备的器件具有较好的质量.C-V测量用来确定载流子的分布和耗尽信息,结果显示,P型层在15 ...     

The pressure-induced phase transition of the solid β–HMX

The structural, vibrational and thermodynamic properties of β-octahydro-1,3,5,7-tetranitro-1,3,5,7-tetrazocine (β–HMX) crystal have been studied using the isothermal-isobaric molecular dynamics (NPT-MD) simulations. The variations of cell volume, lattice constants and molecular geometry of solid β–HMX are presented and discussed at different pressure and temperature. It was found that the N–N bond is significantly lengthened with increasing temperature, which suggests that it is relevant to the initial decomposition. An abrupt change at 27 Gpa for the volume and internal geometrical parameters was observed. This is in good accord with the experimental observation that there is a phase transition at 27 GPa, which is clearly due to conformational change, not chemical reaction. The vibrational frequencies at ambient conditions agree well with experimental results, and the pressure/temperature-induced frequency shifts of these modes are discussed. Frequency discontinuity was also observed at pressure when the phase transition occurred. The Grüneisen parameter was obtained using the vibrational frequency.     

Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal–oxide–semiconductor capacitor

In this study, GaAs metal–oxide–semiconductor (MOS) capacitors using Y‐incorporated TaON as gate dielectric have been investigated. Experimental results show that the sample with a Y/(Y + Ta) atomic ratio of 27.6% exhibits the best device characteristics: high k value (22.9), low interfacestate density (9.0 × 10¹¹ cm^–2 eV^–1), small flatband voltage (1.05 V), small frequency dispersion and low gate leakage current (1.3 × 10^–5A/cm² at V_fb + 1 V). These merits should be attributed to the complementary properties of Y₂O₃ and Ta₂O₅:Y can effectively passivate the large amount of oxygen vacancies in Ta₂O₅, while the positively‐charged oxygen vacancies in Ta₂O₅ are capable of neutralizing the effects of the negative oxide charges in Y₂O₃. This work demonstrates that an appropriate doping of Y content in TaON gate dielectric can effectively improve the electrical performance for GaAs MOS devices.

Capacitance–voltage characteristic of the GaAs MOS capacitor with TaYON gate dielectric (Y content = 27.6%) proposed in this work with the cross sectional structure and dielectric surface morphology as insets.     

加强型Bi-2212超导股线有限元拉伸性能分析

为探究加强型Bi-2212超导股线的力学性能以及不锈钢包带对超导股线力学性能的影响,运用Ansys软件建立加强型Bi-2212超导股线的三维模型,采用有限元分析方法,对其机械结构进行仿真,模拟高温高压热处理后轴向受拉形变量和应力应变分布情况。仿真结果显示,在同样施加100 N拉力的情况下,与超导原线（Bi-2212超导线）相比,密绕Ni₈₀Cr₂₀包带后的加强型Bi-2212超导股线轴向受拉形变程度减小,约10%;应力应变均降低,约30%。采用Ni₈₀Cr₂₀作为外包带制成的加强型Bi-2212超导股线力学性能显著,是未来超导线发展方向之一。     

达旦黄-曲通X-100体系共振光散射法测定蛋白质

基于在Triton X-100存在下,蛋白质与达旦黄作用使得体系的共振光散射增强,在λ＝492 nm处光散射强度最大,增强作用的强弱与蛋白质的含量成正比,据此建立了共振光散射测定蛋白质的新方法。此方法对牛血清白蛋白的检出限达到17.7 ng·mL-1,线性范围为0.03～0.9 μg·mL-1,用于合成样与人血清样品的分析,取得了令人满意的结果。同时也研究了人血清白蛋白、鸡蛋白蛋白、溶菌酶、胰蛋白酶与达旦黄的作用。