Constituent analysis of metal and metal oxide in reduced SIMFuel using bromine-ethyl acetate

Journal of Radioanalytical and Nuclear Chemistry - We demonstrated that bromine in ethyl acetate can selectively separate metallic contents in lanthanide metal-oxide mixtures for analysis, which...     

Regularity of Non-Newtonian Fluids

In this paper, we consider a non-Newtonian fluids with shear dependent viscosity in a bounded domain ${\Omega \subset \mathbb{R}^n, n = 2, 3}$ . For the power-law model with the viscosity as in (1.4), we show the global in time existence of a weak solution for ${q \geq \frac{11}{5}}$ when n = 3 (see Theorem 1.1), and the local in time existence of a weak solution for ${2 > q > \frac{3n}{n+2}}$ , when n = 2,3 (see Theorem 1.2).     

Intuitionistic fuzzy finite state machines

Using the notion of intuitionistic fuzzy sets, the concepts of intuitionistic fuzzy finite state machines (iffsm), intuitionistic successor s, intuitionistic subsystems, intuitionistic submachines, intuitionisticq-twins, and intuitionistic retrievable iffsm are introduce d, and related properties are studied. Relations between intuitionisticq-twins and intuitionisticq-related iffsm are given. A characterization of an intuitionistic retrievable iffsm is provided.     

Morphology and crystalline-phase-dependent luminescence of Li-doped Gd2O3:Eu3+ thin films grown by pulsed laser deposition

Gd₂O₃:Eu³⁺ and Li-doped Gd₂O₃:Eu³⁺ luminescent thin films have been grown on Si(100) substrates using pulsed laser deposition. The films grown at different deposition conditions show different crystalline and morphology structures and luminescent characteristics. Although both cubic and monoclinic crystalline structures were observed in both Gd₂O₃:Eu³⁺ and Li-doped Gd₂O₃:Eu³⁺ films, the cubic structure becomes more dominant for Li-doped Gd₂O₃:Eu³⁺ films. The photoluminescence brightness data obtained from Li-doped Gd₂O₃:Eu³⁺ films indicate that Si(100) is a promising substrate for growth of high-quality Li-doped Gd₂O₃:Eu³⁺ thin-film red phosphor. In particular, the incorporation of Li⁺ ions into the Gd₂O₃ lattice induced a change of crystallinity and enhanced surface roughness. Two major factors to determine photoluminescence brightness for Li-doped Gd₂O₃:Eu³⁺ films were crystalline phase and surface roughness. The highest emission intensity was observed with Gd_1.84Li_0.08Eu_0.08O₃, whose brightness was a factor of 2.1 larger than that of Gd₂O₃:Eu³⁺ films. This phosphor is promising for applications in flat-panel displays. PACS 78.20.-e; 78.55.-m; 78.66.-w     

Sol-gel synthesis of sub-50 nm ZnO nanowires on pulse laser deposited ZnO thin films

A simple synthesis route to high-quality sub-50 nm ZnO nanowires is reported, utilizing ZnO thin films grown by pulse laser deposition (PLD) as seed layers. Depending upon the PLD growth conditions, the surface morphology of the ZnO nanowires on ZnO film was distinctively different whereas the diameters were almost the same. With the increase of the concentration of zinc nitrate/methenamine solution from 0.002 to 0.02 M, the average diameter of the ZnO nanowire increased but remained sub-50 nm. The grown ZnO nanowires showed a high crystallinity with a low defect density confirmed by a sharp photoluminescence spectrum.     

Contactless electroreflectance spectroscopy of Ga(In)NAs/GaAs quantum well structures containing Sb atoms

Contactless electroreflectance (CER) spectroscopy has been applied to investigate the optical transitions in Ga(In)NAs/GaAs quantum well (QW) structures containing Sb atoms. The identification of the optical transitions has been carried out in accordance with theoretical calculations which have been performed within the framework of the effective mass approximation. Using this method, the bandgap discontinuity for GaN_0.027As_0.863Sb_0.11/GaAs, Ga_0.62In_0.38As_0.954N_0.026Sb_0.02/GaAs, and Ga_0.61In_0.39As_0.963N_0.017Sb_0.02/GaN_0.027As_0.973/GaAs QW structures has been determined. It has been found that the conduction-band offset is ∼50 and ∼80% for GaN_0.027As_0.863Sb_0.11/GaAs and Ga_0.62In_0.38As_0.954N_0.026Sb_0.02/GaAs QWs, respectively. It corresponds to 264 and 296 meV depth QW for electrons and heavy-holes in GaN_0.027As_0.863Sb_0.11/GaAs QW; and 520 and 146 meV depth QW for electrons and heavy-holes in Ga_0.62In_0.38As_0.954N_0.026Sb_0.02/GaAs QW. In the case of the Ga_0.61In_0.39As_0.963N_0.017Sb_0.02/GaN_0.027As_0.973/GaAs step-like QW structure it has been shown that the depth of electron and heavy-hole Ga_0.61In_0.39As_0.963N_0.017Sb_0.02/GaN_0.027As_0.973 QW is ∼144 and ∼127 meV, respectively.     

Enhancement of enzymatic digestibility of recycled newspaper by addition of surfactant in ammonia-hydrogen peroxide pretreatment

The effect of surfactant on enzymatic digestibility was investigated during the pretreatment stage. Newspaper was pretreated with an ammonia-hydrogen peroxide mixture on a shaking bath at 40°C and 130 strokes/min for 3 h. Two kinds of nonionic surfactants, NP series and Tween series, were utilized. The effect of hydrophile-lipophile balance (HLB) value of both series surfactants on digestibility was found to be negligible, even though de-inking efficiency was improved as HLB value was increased. The effect of surfactant loading on digestibility was small, below 0.5 wt%, and negligible above 0.5 wt% at 60 international filter paper units (IFPU). The percentage improvement in digestibility increased as enzyme loading decreased. Digestibility of NP-5-added sample relative to control sample, increased significantly at an enzyme loading <60 IFPU, i.e., 19 and 13% at 15 and 30 IFPU, respectively. Such an increase in digestibility was not explained clearly from the experimental results. It was also found that ink removal before enzymatic hydrolysis is very important to enhance digestibility.     

1.55 μm InGaAsP/InP tapered stripe superluminescent diodes with potential optical sensor system applications

We proposed a structure of a 1.55 μm InGaAsP/InP superluminescent diode (SLD) to suppress the lasing action and fabricated laterally tilted multi-quantum well planar buried heterostructure separate confinement heterostructure SLD by using MOCVD and LPE equipments. The fabricated SLD is laterally tilted by 15°. The output power of SLD was 11 mW for 200 mA under pulse driving. The full-width at half-maximum was 42 nm at 200 mA.