N2分压对ZrN/WN纳米多层膜缺陷性质与力学性能的影响

利用射频磁控溅射系统在不同N₂分压的条件下，制备了一系列ZrN/WN纳米多层膜.借助慢正电子湮没技术分析了样品的缺陷性质，采用纳米压痕仪研究了多层膜的力学性能.结果发现：N₂分压为0.4Pa的多层膜具有最小的空位型缺陷浓度，其中心层和膜基结合层的平均S参数分别为0.4402和0.4641，而较低或较高的N₂分压都可能导致空位型缺陷浓度的增加.随着空位型缺陷浓度的减小，多层膜的硬度和临界载荷增大.对于空位型缺陷浓度最小的多层膜，其硬度和临界载荷达到最大值，分别为34.8GPa和100mN，说明较低的缺陷浓度有利于提高多层膜的力学性能. 关键词： ZrN/WN纳米多层膜 缺陷性质 力学性能 慢正电子湮没     

Optical waveguide double-ring sensor using intensity interrogation with a low-cost broadband source

A highly sensitive optical waveguide sensor based on simple intensity interrogation with a broadband light source is proposed and investigated. It consists of two cascaded microring resonators with the same or slightly different free spectral ranges. The variation of the refractive index of the analyte sample results in a large shift in the envelope function of the transmission peaks of the sensor, and, consequently, a large change in the transmitted power. The low-cost sensing scheme can achieve an ultrahigh sensitivity of 2 × 10? dB/RIU. Experimental results on the intensity interrogated double-ring sensor using a broadband source are presented, demonstrating its operation principle and potential for low-cost practical applications.     

利用1 064 nm激光预处理提高pickoff镜损伤阈值

 激光预处理是提高光学元件损伤阈值的有效方法之一。利用输出1 064 nm基频激光的SAGA激光器,采用光栅刻线式扫描的方式对镀多层高反物理膜的pickoff镜进行了能量周期递增的预处理,验证激光预处理对其损伤阈值的提高效果。结果表明：零几率损伤阈值平均提高38.8%,而50%几率损伤阈值提高了7.6%,经过激光预处理后pickoff镜抗损伤能力较处理前有了一定提高。     

低能量阈高纯锗探测器用于暗物质探测实验研究

一个位于韩国江原道襄阳郡地下实验室的暗物质WIMP探测实验中, 采用了低能量阈高纯锗探测器, 带有碘化铯晶体反符合探测器作为主动屏蔽体. 整个系统设置和能量标定已经完成, 并且已经积累了约155d的本底数据. 还应用外置伽玛源和中子源进行了实验, 以判断本底的来源. 介绍了数据的分析和初步结果, 并给出了实验诱人的前景.     

天鹅绒阴极产生的双脉冲强流相对论电子束特性实验研究

在时间分辨的模式下, 实验研究了天鹅绒阴极产生的双脉冲相对论强流电子束的束心运动、束包络和束的发射度. 在实验中, 电子束流强度和电子束心运动用电阻环进行测试, 而电子束和石英玻璃的相互作用产生的契仑科夫辐射用来给出电子束包络和发射度信息. 电子束和石英玻璃作用产生的契仑科夫辐射用1台8幅分幅相机记录. 实验结果表明, 天鹅绒阴极产生的相对论强流双脉冲电子束在束流大小、束心运动轨迹、束包络及束发射度等方面具有较好的一致性.     

感应叠加过程行波分析和模拟

 采用变换矩阵为研究工具对感应叠加过程中行波的传播、透射、反射进行了分析，得到了和集中参数分析一致的稳定解，给出了电压随时间变化的细节。建立了3.5 MeV注入器脉冲功率源和感应叠加结构的电路模型，得到的感应腔压模拟波形和实验波形基本一致，结合行波分析法基本解释了腔压波形和Blumlein线输出波形之间较大差异的成因，阴极叠加电压的模拟也反映了实验中主脉冲后的反射波形。     

Tm3+/Yb3+共掺氧卤碲酸盐玻璃上转换发光研究

研究了Tm3+/Yb3+共掺氧卤碲酸盐玻璃的上转换发光光谱,分析了TmO3量对Tm3+/Yb3+共掺氧卤碲酸盐玻璃上转换发光的影响机理.结果表明:在Tm3+/Yb3+共掺氧卤碲酸盐玻璃的上转换发光中,Tm3+存在较强的浓度猝灭效应.随Tm2O3含量增加,Tm3+的上转换蓝光和红光强度先增加,后降低,在0.1 mol% Tm2O3达到最大.该结果有助于进一步提高Tm3+的上转换发光效率.     

金刚石压腔蛇纹石原位拉曼光谱研究

在金刚石压腔中,运用激光拉曼光谱技术对高压下蛇纹石矿物结构及其稳定性进行了原位观测与研究。实验获得蛇纹石在常温下从0.1～5 140MPa的拉曼光谱数据。研究发现,蛇纹石低频拉曼谱峰388,471,692和705cm-1随压力增加有规律地向高频偏移;层内羟基3 664cm-1峰和层间羟基3 696cm-1峰与压力呈明显的正相关性。层内羟基3 664cm-1峰随压力变化的斜率为3.3cm-1.GPa-1,层间羟基3 696cm-1峰在2.0GPa时斜率由8.3cm-1.GPa-1变为1.1cm-1.GPa cm-1。在实验温压条件下,蛇纹石未发生脱水作用。     

Thermal resistance matrix representation of thermal effects and thermal design in multi-finger power heterojunction bipolar transistors

The thermal resistance matrix including self-heating thermal resistance and thermal coupling resistance is presented to describe the thermal effects of multi-finger power heterojunction bipolar transistors. The dependence of thermal resistance matrix on finger spacing is also investigated. It is shown that both self-heating thermal resistance and thermal coupling resistance are lowered by increasing the finger spacing, in which the downward dissipated heat path is widened and the heat flow from adjacent fingers is effectively suppressed. The decrease of self-heating thermal resistance and thermal coupling resistance is helpful for improving the thermal stability of power devices. Furthermore, with the aid of the thermal resistance matrix, a 10-finger power heterojunction bipolar transistor (HBT) with non-uniform finger spacing is designed for high thermal stability. The optimized structure can effectively lower the peak temperature while maintaining a uniformity of the temperature profile at various biases and thus the device effectively may operate at a higher power level.     

Superheating of confined Pb thin films

In this work we report, for the first time, an experimental observation of a superheating phenomenon in metal thin films. By means of cold rolling, Pb thin films of about 20 nm thick were sandwiched by Al layers, and between them semicoherent epitaxial Pb/Al interfaces were formed. In situ x-ray diffraction analysis indicated that the confined Pb thin films could be superheated for at least 6 degrees C. Thermodynamic analysis indicated that such a substantial superheating in the confined two-dimensional thin films may originate from suppression of growth of the molten droplets by the epitaxial Al/Pb/Al confinement, instead of suppression of melt nucleation for the confined particle superheating.