一种锰铜压阻测量新方法

 简单分析了几种常用的恒流供电锰铜压阻测量方法，并对这些测试方法的特点和不足进行了讨论。最后介绍一种利用数字示波器进行高保真高精度测量的方法，利用此法不仅提高了压力测量的精度，并且把小阻值锰铜压力计的测量范围向低端扩展到0.17 GPa。     

Research on sound radiation from body in free field

I.IntroductionWhenastructurcvibratcs,itsvibratingsurfacewillmakesurroundingmediummovetogethcrwithit.Ifthernotionissofastthatthcmediumroundthestructureproduccaloca1contractionandcxpansionandthcypropagatefaraway,thesoundradiationisformed.Itispossiblctodcscribeanalytica11ytheradiationfic1dofsimplyandregularlyshapcdsourcessuchaspointsoundsourccs,spherica1soundsourccsandinflnite1engthllnearsoundsourccs,butitisa1mostimpossib1ctosolvetheradiationfiledbyanyanalyt-ica1methodforsourcesofvcrycomplicateds…     

加权Herz—type Triebel—Lizorkin空间的特征及应用

当s∈ R,0,〈q, p〈∈∞,0,〈β≤∞且 max{-n/q,-nδ2/qδ1}〈a时，定义了加权Herz—type　Triebel-Lizorkin空间kq^q,pF^s β（R^n,ω1，ω2）和Kq^a,pF^sβ（R^n，ω1，ω2），并给出这些空间的一些特征及在这些空间上的Hard—Littlewood极大算子不等式．     

第一讲中子散射与散裂中子源

中子散射是研究物质微观结构和动态的理想工具之一,广泛地应用于凝聚态物质研究和应用的众多学科领域.散裂中子源能是新一代的加速器基脉冲中子源,能为中子散射提供高通量的脉冲中子.文章简明地介绍了中子散射的特点和它作为物质结构和动态探针的优越性,以及散裂中子源的基本原理、发展状况和多学科的应用优势.我国计划建设的散裂中子源CSNS中,靶站将由多片钨靶、铍/铁反射体和铁/重混凝土生物屏蔽体组成.质子束功率100kW下,脉冲中子通量约为2.4×1016n/cm2/s.第一期将设计建造高通量粉末衍射仪、高分辨粉末衍射仪、小角散射仪、多功能反射仪和直接几何非弹性散射仪等五台典型的中子散射谱仪,以覆盖大部分的中子散射研究领域.     

中物院远红外自由电子激光实验研究

中国工程物理研究院基于射频直线加速器技术的远红外自由电子激光(FIR-FEL)实验取得阶段性进展,于2005年3月24晚8时30分首次出光, 并多次重复. 中心波长115μm, 谱宽1%.介绍了实验系统的主要组成部分和主要实验结果.     

航空兵塔台辅助指挥系统通信分系统技术设计方案

文章详细描述了航空兵机场塔台辅助指挥系统之通信分系统设计的特点与功能、硬件结构、软件设计原则以及接口通信协议等问题。该分系统设计已在航空兵塔台辅助指挥系统研究中得到应用 ,并达到了良好的控制效果。     

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.     

Effect of end groups on complexation kinetics between cyclodextrins and guest polymers

α‐Cyclodextrin (α‐CD) has been complexed with various poly(ethylene glycol) (PEG) derivatives in aqueous solution. It has been found that the end groups of PEG derivatives affect the complexation kinetics greatly, but have only a little influence on the thermodynamic behavior. By increasing the hydrophobicity of end groups, the complexation speeds up rapidly. On the other hand, the bulky end groups slow down the threading of polymeric guests into the cavity of CD. By changing the hydrophobicity and the size of end groups, the complexation rate can be adjusted in the range of several orders of magnitudes, which should be quite useful in the design of new supramolecular systems. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 2050–2057, 2006     

原子核电荷半径的新公式

结合原子核的电荷半径的实验数据,详细分析了描述原子核电荷半径的经验公式,表明电荷半径的Z^1/3律优于A^1/3律.更细致的考察发现,对于远离β稳定线的核素,电荷半径具有近似线性的同位旋相关性.由此得到的同位旋相关的Z^1/3公式更适合描述原子核的电荷半径.     

EFFICIENT SIXTH ORDER P-STABLE METHODS WITH MINIMAL LOCAL TRUNCATION ERROR FOR y"=f(x,y)

1. IntroductionWe consider a class of direct hybrid methods proposed in [11 for solving the second orderinitial value problemy" = f(t,y), y(0),y'(0) given (1.1)The basic method has the formandHere t. = nh and we define t.l.. = t. I aih, i = 1, 2 and n=0,1…