某型飞机驾驶杆线性位移差分变压器传感器信号调理校正

飞机驾驶杆LVDT(线性位移差分变压器)传感器信号测试校正在航空测控研究领域具有十分重要的意义,提出了一种针对某型飞机驾驶杆LVDT传感器信号精确调理校正方法;介绍了飞机驾驶杆LVDT传感器原理,分析了AD598 LVDT调理芯片的使用局限,利用最小二乘法设计了精确调理校正方法;基于VC++2010开发环境,利用高精度的模拟校正源产生模拟激励校正信号,设计了驾驶杆LVDT多通道软件自校正方法,它可以有效提高解调电路的线性度和对称性,克服了AD598常规调理电路的使用局限,从而实现驾驶杆LVDT信号精确检测;理论分析与数值试验验证了所提方法的正确性和有效性。     

基于密度泛函理论的叶绿素A性质的研究

在液相环境中,采用密度泛函理论(DFT)、含时密度泛函理论(TD-DFT)、Multiwfn波函数分析软件,在pbepbe/6-311g(d)基组水平上,计算并分析了叶绿素A的结构、紫外光谱和电子—空穴分布,结果表明:pbepbe/6-311g(d)方法是计算叶绿素A紫外吸收光谱更精确的方法;叶绿素A分子的吡咯环与取代基相互作用的过程中,吡咯环Ⅳ受侧链"尾巴"的影响最大;理论计算的紫外光谱与实验数据吻合较好,其中635.71 nm和446.87 nm处的两个吸收峰可认为是叶绿素A的特征吸收峰;侧链或取代基团在叶绿素A激发过程中是给电子体,卟啉"头"既是电子供体,也是电子受体.     

第一性原理对(NaP_3)_n(n=1～5)团簇的几何结构和性质的研究

本文采用第一性原理研究了(NaP_3)_n(n=1~5)团簇的几何结构、能隙、电荷分布以及态密度.研究结果表明:NaP_3团簇为线型结构,是(NaP_3)_n(n=1~5)团簇中的基本单元,随着n增大,团簇转变为环状结构和空间结构;(NaP_3)_3团簇的能隙出现峰值,表明该团簇较其他团簇有较高的稳定性;(NaP_3)_3团簇中对于高能量区域的态密度是由Na 3s和P 3p轨道贡献,其中在费米附近的能量主要由P 3p轨道贡献,对于低能量区域的态密度主要由Na 3s轨道贡献;(NaP_3)_n(n=1~5)团簇中的Na原子电荷分布均为正值,表明电荷总体上是从Na原子转移到P原子.     

Protection of iron corrosion by stearic acid and stearic imidazoline self-assembled monolayers

A type of stearic imidazoline (IM) inhibitor was prepared using stearic acid (SA) and diethylenetriamine (DETA) as raw materials. The monolayers of IM and SA were assembled on the iron surface. The electrochemical characterization of stearic acid (SA) and stearic imidazoline (IM) on an oxide free iron surface had been studied. The monolayers of IM inhibitor were characterized by electrochemical impedance spectroscopy (EIS), electrochemical polarization curves, double layer capacitance, X-ray photoelectron spectroscopy (XPS) and molecular simulation. The results of electrochemical studies had illustrated that the inhibition efficiency of IM was higher than SA. XPS showed that the IM molecules adsorbed on the iron surface. The molecular simulation calculations showed that the IM molecules were tilted at an angle on the iron surface.     

Study of asymmetric charge writing on Pb(Zr,Ti)O3 thin films by Kelvin probe force microscopy

Polycrystalline Pb(Zr_0.55Ti_0.45)O₃ thin film was deposited on Pt/Ti/SiO₂/Si(1 0 0) by radio-frequency-magnetron sputtering method, and the writing of charge bits on the surface of PZT thin film was studied by Kelvin probe force microscopy. It is found that the surface potential of the negative charge bits are higher than those of the corresponding positive ones. When ferroelectric polarization switching occurs, the potential difference becomes even more remarkable. A qualitative model was proposed to explain the origin of the asymmetric charge writing. It is demonstrated that the internal field in the interface layer, which is near the ferroelectric/electrode interface in ferroelectric film, is likely to be the cause for the occurrence of this phenomenon.     

Different effects of cerium ions doping on properties of anatase and rutile TiO2

Pure and Ce⁴⁺ doped anatase and rutile TiO₂ were prepared by hydrothermal methods and characterized by XRD, TEM, UV-vis diffusion spectroscopy, and XPS measurements. The photocatalytic reactivity of the catalysts was evaluated by the photodegradation of Rhodamine B (RB) under ultraviolet irradiation. The photocatalytic efficiency of the rutile sample doped with an appropriate amount of Ce⁴⁺ was enhanced while all Ce⁴⁺ doped anatase samples showed a much lower activity than pure anatase. The reasons were discussed     

Microstructure of laser melted Al18B4O33w/2024Al composite

The microstructure of a laser treated Al₁₈B₄O₃₃w/2024Al composite has been investigated using transmission electron microscope (TEM), low-angle (glancing angle) X-ray diffraction (XRD) techniques. Various surface microstructures were observed in the laser treated composite. The Al₁₈B₄O₃₃ whisker on the surface of the composite was decomposed during laser surface melting, various decomposition products were studied in the laser treated composite. Eutectic phases and the precipitation in the matrix of the composite with laser-treated were observed. The main phases detected in the molten zone were aluminum and decomposition products Al₂O₃. The effect of laser treatment on the hardness of the composite was also examined. A surface hardness of 400 Hv was noted.     

Thin strain-relaxed SiGe grown by ultrahigh vacuum chemical vapor deposition

Large-scale preparation of thin strain-relaxed SiGe is achieved by combining ion implantation and ultrahigh vacuum chemical vapor deposition. The resulting materials were analyzed by double crystal X-ray diffraction, micro-Raman spectroscopy, and tapping mode atomic force microscope. Results revealed that 100-nm-thick Si_0.7Ge_0.3 layers with the diameter of 125 mm and full strain relaxation are successfully prepared by pre-modifying the Si substrates using 50 keV Ar⁺ ions. The strain relaxation is also disclosed to change with both ion species and energy. However, post-modification of SiGe by ion implantation will cause serious damage to the crystal structures, and result in the formation of poly-crystal SiGe.     

Circumferential and longitudinal defect detection using T(0,1) mode excited by thickness shear mode piezoelectric elements

Different kinds of defects, such as corrosions, notches and cracks etc, exist in pipes. Mode choice is important since unfortunately not all ultrasonic guided wave modes are suitable for these kinds of defect detection. T(0,1) mode which is non-dispersive is the lowest and fastest torsional mode and most suitable for defect detection in pipes. Two completely different artificial defects including longitudinal and circumferential defects are processed successively in a 4-m-long, 60-mm-OD, 3.5-mm-wall steel pipe. T(0,1) mode at 45 kHz is excited to detect these defects using thickness shear mode piezoelectric elements. Experimental results show that two kinds of defects are detectable using T(0,1) mode. Comparing with longitudinal modes, torsional modes are dominant in pipe inspection for their sensitivities to different kinds of defects.