氢化丁苯共聚物结构的核磁共振波谱表征Ⅰ.13C谱带的归属

本文分别用JEOL FX-90Q和Bruker AM-300波谱仪测定了氢化聚丁二烯和氢化丁苯共聚物的¹H,¹³C-NMR谱,得到了分辨率较高的谱图和新的结构信息。借助DEPT技术确定了各谱带的CH或CH₂类型。利用Grant-Paul和Lindeman-Adams介绍的化学位移经验计算公式,考虑苯基对α、β和γ碳原子的影响,计算了各种三单元序列中有关碳原子的化学位移。对脂肪碳部分的28组谱带重新进行了归属。化学位移计算值与实测值基本相符,并得到了不同组成的模型聚合物¹³C-NMR谱的各谱带强度变化规律的验证。     

氢化丁苯共聚物结构的核磁共振波谱表征Ⅱ.微观结构的定量计算

在氢化丁苯共聚物¹³C-NMR谱脂肪碳部分谱带归属的基础上,根据各谱带的主要来源,推导出六个二单元浓度的计算公式。计算出二单元、一单元的相对含量,各结构单元的数均序列长度、嵌段含量和其它结构参数。加氢前后的¹H-和¹³C-NMR谱的组成计算结果基本一致。初步探讨了作为粘度指数改进剂的氢化丁苯共聚物微观结构与性能的关系,为合成提供了依据。     

用光电法测量刚体的转动惯量──对波纹法测量刚体转动惯量的改进

用Ｊ─ＬＤ２转动惯量测试仪的波纹法测试转动惯量的实验方法，测量精度差，操作不方便．利用实验室现有的仪器改进成光电法测试转动惯量的方法，简单易行，测量精度高，操作方使，实践效果良好．     

病毒感染群体动力学模型分析

本文构建并讨论了一类病毒感染的群体动力学模型,得到了模型存在轨道稳定周 期解的充分条件,较好地解释了在病毒持续感染者体内观察到的病毒载量波动现象.     

THE INVERSE PROBLEM FOR PART SYMMETRIC MATRICES ON A SUBSPACE

In this paper, the following two problems are considered:Problem Ⅰ. Given S∈E Rn×p,X,B 6 Rn×m, find A ∈ SRs,n such that AX = B, where SR8,n = {A∈ Rn×n|xT(A - AT) = 0, for all x ∈ R(S)}.Problem Ⅱ. Given A* ∈ Rn×n, find A ∈ SE such that ||A-A*|| = minA∈sE||A-A*||, where SE is the solution set of Problem Ⅰ.The necessary and sufficient conditions for the solvability of and the general form of the solutions of problem Ⅰ are given. For problem Ⅱ, the expression for the solution, a numerical algorithm and a numerical example are provided.     

Dirichlet型空间上的乘子

本文主要根据τ与μ的不同取值分三种情况刻划了Cn中单位球上Dirichlet 型空间上的点乘子空间M(Dτ,Dμ),并通过两个函数的构造表明:当τ≤n时,包含 关系M(Dτ)(?)Dτ和当τ>μ,τ>n-1时,包含关系M(Dτ)(?) M(Dμ)是严格的.     

Stability of polymer thin-film transistors based on poly(2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene)

Polymer thin-film transistors (PTFTs) based on poly(2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV) semiconductor are fabricated by spin-coating process and characterized. In the experiments, solution preparation, deposition and device measurements are all performed in air for large-area applications. Hysteresis effect and gate-bias stress effect are observed for the devices at room temperature. The saturation current decreases and the threshold voltage shifts toward the negative direction upon gate-bias stress, but carrier mobility hardly changes. By using quasi-static C-V analysis for MOS capacitor structure, it can be deduced that the origin of threshold-voltage shift upon negative gate-bias stress is predominantly associated with hole trapping within the SiO₂ gate dielectric near the SiO₂/MEH-PPV interface due to hot-carrier emission.     

不同地区人发中微量元素的测定与生存环境的比较研究

采用高压密封消化罐对人发样品进行处理,将化学计量学应用于ICP-AES法测定了人头发中20种微量元素的含量。该方法操作简单、快速、灵敏度高,准确性好, 且多元素同时测定,回收率在94.07%～107.60%之间。相对标准偏差小于3.49%。通过对不同地区不同年龄1 600人头发的测定结果,探讨了营养、环境污染等因素对人体健康的影响,从而对其生存环境进行比较研究。