2,3-二羟基萘钼多酸有机衍生物的合成及1H NMR和IR谱学研究

本文对二种新合成的2，3－二羟基萘二钼和四钼多酸有机衍生物[n-Bu)4N]2[Mo2O5(OC10H6O)2](Ⅰ）和[n-Bu)4N]2[Mo4O10(OC10H6O)2(OCH3)2](Ⅱ)进行了红外光谱与核磁共振波谱研究，发现[Mo2O5]^2 中钼氧多桥键的红外振动频率较[Mo4O10(OCH3)2]^2 中钼氧多桥键的红外振动频率红移，而在配合物Ⅱ中2，3－二羟基中芳环的^1H化学位移较配合物Ⅰ中向低场移动。同时还发现含二钼配位中心[Mo2O5]^2 的[Mo2O5(OC10H6O)2]^2-与含四钼配位中心[Mo4O10(OCH3)2]^2 的[Mo4O10(OC10H6O)2(OCH3)2]^2-生成条件的差异仅仅只在反应体系的pH值的微小变化，说明钼多酸有机衍生物阴离子是对体系酸碱度极为敏感的物质。     

双面金属包覆介质波导模序数的判别方法

在双面金属包覆介质波导中 ,随着介质层厚度的变化 ,会出现TM0 模与TM1 模的分离和简并两种状态 ,从而影响衰减全反射 (ATR)谱中模序数的确认。通过对金属波导的理论分析和实验研究 ,提出了三种模序数确认方法 :本征角计算法、吸收峰全峰半宽比较法和吸收峰峰间距比较法 ,实现了两种状态下对模序数的准确判断     

VO2-Based Infrared Microbolometer Array

V0₂-based thin film materials on silicon substrates are fabricated by ion beam sputtering and a post-annealing which is different from the conventional fabricating method. An infrared linear microbolometer array with 128 pixels is prepared using as-deposited vanadium dioxide thin films. Optical and electrical properties for V0₂-based microbolometer array are tested.     

无界区域抛物方程自然边界元方法

本文应用自然边界元方法求解无界区域抛物型初边值问题。首先将控制方程对时间进行离散化,得到关于时间步长离散化的椭圆型问题。通过Fourier展开,导出相应问题的自然积分方程和Poisson积分公式。研究了自然积分算子的性质,并讨论了自然积分方程的数值解法,最后给出数值例子。从而解决了抛物型问题的自然边界归化和自然边界元方法。     

Broadband Analysis of Holographic Power Combining Circuits

Holography is a promising technique for power combining applications in the frequency range of short millimeter and submillimeter waves. In this paper, quasi-optical holographic power combining circuits are investigated. An equivalent network is utilized which rigorously models horn arrays and biperiodic dielectric structures in order to design computer-generated holograms. We apply the network model to a 5-element quasi-optical power combiner and demonstrate its capability. The hologram is designed for 150 GHz and has an efficiency of 92.5 % with a 90 % bandwidth of 5.3 %. With the aid of a broadband waveguide power divider and a vector field measurement system, the circuit is analyzed.     

Microstructure of a-SiOx:H

A set of a-SiO_x:H (0.52 <x< 1.58) films are fabricated by plasma-enhanced-chemical-vapor-deposition (PECVD) method at the substrate temperature of 250°C. The microstructure and local bonding configurations of the films are investigated in detail using micro-Raman scattering, X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). It is found that the films are structural inhomogeneous, with five phases of Si, Si₂O:H, SiO:H, Si₂O₃:H and SiO₂ that coexist. The phase of Si is composed of nonhydrogenated amorphous silicon (a-Si) clusters that are spatially isolated. The average size of the clusters decreases with the increasing oxygen concentration x in the films. The results indicate that the structure of the present films can be described by a multi-shell model, which suggests that a-Si cluster is surrounded in turn by the subshells of Si₂O:H, SiO:H, Si₂O₃:H, and SiO₂.     

A CLASS OF r-POINT (r+1)ST-ORDER A-STABLE ONE-BLOCK METHODS WITH DAMPING AT THE INFINITE POINT

1　ＩｎｔｒｏｄｕｃｔｉｏｎＦｏｒｓｏｌｖｉｎｇｓｔｉｆｆｉｎｉｔｉａｌｖａｌｕｅｐｒｏｂｌｅｍｓｆｏｒｓｙｓｔｅｍｓｏｆＯＤＥｓｙ′=ｆ(ｙ) ,ｙ(ｔ0 ) =ｙ0 ,ｔ0 <ｔ≤Ｔ ,ｙ0 ,ｙ∈Ｒｍ,ｆ :Ω Ｒｍ →Ｒｍ (1 .1 )ｍａｎｙｐａｒｔｉｃｕｌａｒｏｎｅ ｂｌｏｃｋｍｅｔｈｏｄｓｏｆｔｈｅｆｏｒｍＹｎ+1= ＡＹｎ+ｈ( Ｂ0 Ｆ(Ｙｎ) + Ｂ1Ｆ(Ｙｎ+1) ) , Ａ =Ａ Ｉｍ, Ｂｉ=Ｂｉ Ｉｍ,Ａ ,Ｂｉ∈Ｒｒ×ｒ,Ｙｎ =(ＹＴｎｒ,… ,ｙＴ(ｎ+1)ｒ- 1) Ｔ,Ｆ(Ｙｎ) =(ｆＴ(ｙｎｒ) ,… ,ｆＴ(ｙ(ｎ+1)ｒ- 1) ) Ｔ,ｙｊ≈ ｙ(ｔｊ) ,…     

用多焦点全息透镜实现多重谱分数傅里叶变换

提出用多焦点全息透镜实现多重谱分数傅里叶变换.利用全息方法通过一次曝光制作出多焦点的全息透镜,分析了用此全息元件实现这种变换的条件,并在实验上实现了多重谱分数傅里叶变换. 实验结果表明这种变换方法简便可行,可广泛应用于多通道光学信息处理系统及多目标图像识别系统中.     

进一步改进边界元方法以克服振动声辐射计算中解的非唯一性

章利用基于三次B样条插值的边界元方法，对振动体外部声辐射问题进行了研究，对CHIEF法及其改进方法作了进一步的改进，提出在加权余量意义下，通过把内部Helmholtz积分方程与其对内点坐标取导后的方程式作线性叠加，在域外构作的一个小体积块上进行积分以形成补充方程，经与表面Helmholtz积分方程相结合，来求解任意频率下的声辐射问题，并以脉动球和摆动球作为算例，说明本提出的方法能够有效地克服在特殊频率处解的非唯一性问题。     

Account of Thermal Flow Through Metal-Semimetal BiSb Contact Boundary for Determination of EHF Detector Volt-Watt Sensitivity

Bismuth, antimony and its alloys are the typical representatives of a class of semimetals, which electric conductance is lower in 10²-10³ times, than of usual well conducting an electrical current metals. The alloys bismuth with antimony have semi-conductor properties in wide area of compositions at temperatures below 77 °K. The semimetals are rather perspective materials from the point of view of their probable application in various devices [1,2,3].In present time the semimetal alloys BiSb have wide application in thermoelectric generators and refrigerators. In work [3] the opportunity of use of semimetals BiSb with percentage content of Bi and Sb from 8 % up to 25 % was shown as high-sensitivity and of small inertion indicators of the mm range radiation where thermoelectric effect is used. The principle of action of such indicators is based on occurrence of temperature gradient in a semimetal crystal BiSb that has two contacts of the various area with flowing electrical current. Basic element of such device is the dot contact metal - semimetal. One of the main characteristics is volt-watt sensitivity of metal-semimetal BiSb contact which calculating is shown in present work.