增强UV-B辐射、NaCl胁迫及其复合处理对小麦幼苗光合作用及黄酮代谢的影响

依据增强UV-B辐射、NaCl胁迫及其复合处理不同天数，分别测定各处理小麦幼苗第一片真叶的净光合速率、气孔导度、叶肉细胞间隙二氧化碳浓度、叶绿素含量、黄酮含量和苯丙氨酸裂解酶活性.发现NaCl胁迫和增强UV-B辐射均明显降低小麦幼苗的净光合速率、气孔导度和叶肉细胞间隙CO2浓度;和NaCl胁迫相较， NaCl+UV-B辐射对小麦幼苗上述指标无进一步降低效应.增强UV-B辐射、NaCl胁迫及其复合处理均促进苯丙氨酸裂解酶活性和黄酮含量提高.说明了增强UV-B辐射降低小麦幼苗净光合速率的主要原因是气孔限制，而NaCl胁迫减轻了增强UV-B辐射对小麦幼苗光合作用的降低效应.     

傅立叶变换激光腔内吸收光谱方法研究吸收谱线的强度与线形

在原有傅立叶变换激光腔内吸收光谱实验装置的基础上,利用信号差分方法减少了光强波动对实验干涉谱图的影响,改善了信噪比.通过对大气中氧气在760nm处的吸收谱线的绝对强度测量,验证了该方法的定量测量能力.在不同压力条件下对磷烷v=6伸缩局域模泛频吸收谱带进行了测量,获得了其谱线的自压力加宽和自压力线移参数.     

分压与限流线路特性分析

在电学实验的创新设计类问题中,常常涉及到滑线变阻器的分压线路和限流线路。本文对滑线变阻器的分压线路和限流线路的特性作一较系统的分析,对涉及到此类问题的实际工作具有指导意义。     

Pico-second photoelectric characteristic in manganite oxide La0.67Ca0.33MnO3 films

Ultrafast photoelectric characteristic has been observed in La_0.67Ca_0.33MnO₃ films on tilted SrTiO₃ substrates. A pico-second (ps) open-circuit photovoltage of the perovskite manganese oxide films has been obtained when the films were irradiated by a 1.064μm laser pulse of 25 ps duration. The rise time and full width at half-maximum of the photovoltage pulse are ～300 ps and ～700 ps, respectively. The photovoltaic sensitivity was as large as ～500 mV/mJ.     

Oscillatory disturbance in force calibration of optical tweezers

In the calibration of the optical trap stiffness, it is found that there appears an attenuating oscillation as an oscillatory disturbance added to the trapped bead movement, when the scanner is driven by a triangular wave input.An equivalent oscillator model is put forward to explain the mechanism of the oscillatory disturbance. Both the measurements and calculations show that the attenuating oscillation comes from the oscillation of the scanner and the triangular wave drive causes this additional oscillation of the scanner. Furthermore, the analysis indicates that the oscillatory disturbance will become stronger, when the stiffness of the trap increases or the natural frequency of the scanner decreases. We adopt another driving way, i.e. a sinusoidal wave input is used instead of the triangular wave input. Our experiment has verified that in this case the oscillatory disturbance is eliminated completely.     

ICP-AES法测定猫爪草中常量及微量元素

运用ICP—AES法对河南、新疆产猫爪草中常量及微量元素进行了测定。结果表明猫爪草含K,Fe,Ca,Cr,Mg,Mn,Zn,Co,Cu,Ni,Se,Sr等多种常量及微量元素,微量元素Pb,Cd,As等的含量甚微;研究发现猫爪草块根中Zn/Cu值为3左右,与抗癌中药中微量元素的含量有Zn高Cu低的现象一致。     

拉曼散射研究微尺寸圆锥形状的GeSi合金薄膜的应力(英文)

pacc:7830,7850C Wepresentthemicro-Ramanstudyof curvedGexSi1-x/GeySi1-yheterostructure,and foundthestrainofthecurvedthinlayerispropor tionaltothecurvature,i.e.inverselyproportional tothediameter.TheopticalandelectricpropertiesofSi1-x GexalloygrownonSisubst…     

Characteristics of Sn-Doped Ge2Sb2Te5 Films Used for Phase-Change Memory

Sn-doped Ge2Sb2Te5 thin films deposited on Si（100）/SiO2 substrates by rf magnetron sputtering are investigated by a differential scanning calorimeter, x-ray diffraction and sheet resistance measurement. The crystallization temperatures of the 3.58 at.%, 6.92 at.% and 10.04 at.% Sn-doped Ge2Sb2Te5 thin films have decreases of 5.3, 6.1 and 0.9℃, respectively, which is beneficial to reduce the switching current for the amorphous-to-crystalline phase transition. Due to Sn-doping, the sheet resistance of crystalline Ge2Sb2Te5 thin films increases about 2-10 times, which may be useful to reduce the switching current for the amorphous-to-crystalline phase change. In addition, an obvious decreasing dispersibility for the sheet resistance of Sn-doped Ge2Sb2Te5 thin films in the crystalline state has been observed, which can play an important role in minimizing resistance difference for the phase-change memory cell element arrays.     

Gd替代对La0.6-xGdxSr1.4MnO4磁性和输运性质的影响

随着x的增加，多晶La0.6-xGdxSr1.4MnO4（x=0, 0.1, 0.2, 0.4, 0.6）的零场冷却 曲线从类自旋玻璃型转变成顺磁型，并且每条零场冷却 曲线都有一在20K的拐点。这一行为可以从Gd和Mn各自对材料总磁性的不同贡献来理解。另外，在所有的样品中，从100K到室温，都观察到了热激活导电行为。由于Mn-Mn间强的反铁磁耦和，直到外场达到50 kOe，都没有观察到明显的磁电阻效应。     

Interfacial structure and electrical properties of LaAlO3 gate dielectric films on Si by metalorganic chemical vapor deposition

LaAlO₃ (LAO) gate dielectric films were deposited on Si substrates by low-pressure metalorganic chemical vapor deposition. The interfacial structure and composition distribution were investigated by high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), secondary-ion mass spectroscopy (SIMS), and Auger-electron spectroscopy (AES). HRTEM confirms that there exists an interfacial layer between LAO and Si in most samples. AES, SIMS, and XPS analyses indicate that the interfacial layer is compositionally graded La–Al silicate and the Al element is severely deficient close to the Si surface. Electrical properties of LAO films were evaluated. No evident difference in electrical properties between samples with and without native SiO₂ layers was observed. The electrical properties are discussed in terms of LAO growth mechanisms, in relation to the interfacial structure. PACS 73.40.Qv; 81.15.Gh; 77.55.+f; 68.35.-p