制作高密度衍射光栅的光电式刻划控制的研究

高精度的光电式刻划控制系统是制作高密度母光栅的关键技术,以光栅干涉仪为控制核心,设计了光电式的光栅刻划控制系统,并对可能产生的加工误差进行了初步的分析;采用该控制系统的光栅刻划实践表明,所设计的光电式刻划控制系统已完全达到了高密度衍射光栅的亚微米栅距分度要求。     

基于图像处理的人眼注视方向检测研究

提出了一种基于图像处理技术以实现人眼注视方向的实时检测方法。研究了人眼瞳孔、眼眶的位置、形状及其与视线方向的关系。以人眼注视不同方向时,眼睛瞳孔位置和眼眶形状产生的差异为基础,通过对所拍摄的眼部图片进行实时处理与分析,实现了对人眼注视方向的实时检测。实验结果表明了该方法的可行性及有效性。     

基于灰度变换的红外图像实时分割算法

针对高灰度等级红外数字图像提出了一种基于灰度变换的实时分割算法.通过实时分析原始图像中几个小区域的灰度直方图,自动确定分割阈值,将原始图像通过灰度变换实时转换为低灰度等级图像.该算法能够将高灰度等级的红外数字图像实时显示在普通显示器上,并且能够有效抑制背景并保留目标灰度信息.由于变换后的图像灰度等级较低而且背景及噪音信息较弱,极大地提高了红外跟踪器的性能.     

Efficient Laser-Diode End-Pumped Passively Q-Switched Mode-Locked Yb：LYSO Laser Based on SESAM

We report an efficient Q-switched laser action based on a semiconductor saturable absorber mirrors （SESAMs） as passively Q-switched laser starter and a Yb：LYSO alloyed crystal as gain material pumped directly by 974nm InGaAs laser diodes. The output pulse duration is measured to be about 7μs, while the average power and the repetition rate of the pulse chain are about 0.92 W and 6.2 kHz, respectively, under 12.5 W absorbed pumping power. The Q-switched mode-locked pulse train is also observed in this setup. The laser performance shows that Yb：LYSO is a promising laser gain medium for laser-diode pumped compact solid-state lasers.     

Nonlinear-Ion-Acoustic-Wave Instability, Threshold, Half Width of Trapped Region and Transition Region

Nonlinear Landau damping of ion acoustic wave (IAW) is one of the most important phenomena in the ionosphere and in space and laboratory plasma as well. The instability growth rate of the IAW with electron drift, the amplitude threshold for exciting the nonlinear effects, the half widths of the trapped region with the trapped electrons are studied experimentally. Under the experimental conditions, it is shown that there is a frequency range of 140--160 kHz, within which the growth rate has the largest value of about 6×10⁴--1.5×10⁵ s^-1. We obtain the transitional region width caused by collisions theoretically and experimentally, for the first time to our knowledge. The experimental results are in good agreement with the theoretical prediction.     

Surface Plasmon Resonance and Field Enhancement of Au/Ag Alloyed Hollow Nanoshells

We investigate the nanostructure, surface plasmon resonance （SPR） absorption and nonlinear enhancement of Au/Ag alloyed hollow nanoshells prepared by the replacement reaction of Ag nanoparticles in a HAuCI4 aqueous solution. As the volume of HAuCl4 increases from OmL to 0.S mL, the SPR band of the Au/Ag alloyed nanoshells is tuned from 430nm to 780nm, and the third-order nonlinear optical susceptibility is enhanced nearly by an order of magnitude, which indicates a large enhancement of local field in the Au/Ag alloyed hollow nanoshells with hole defects.     

High-Pressure Phase Transition in Cyclo-octane

Structural behaviour of cyclo-octane under high pressure is studied by using a synchrotron x-ray source in a diamond anvil cell （DAC） up to 40.2 GPa at room temperature. The cyclo-octane firstly solidifies to the triclinic phase at 0.87 GPa. With the increasing pressure, the phase of cyclo-octane changes to the tetragonal phase at about 6.0 GPa and then transforms to amorphous phase above 18.2 GPa, which is kept till to 40.2 GPa. All the phase transitions of cyclo-octane are irreversible.     

正交各向异性弹性平面应力的近似计算方法

本文在列赫尼茨基方法的基础之上提供一个正交各向异性弹性平面应力的近似计算方法。利用这个方法,我们处理了下面三种问题:(1)具有圆孔梁的纯弯曲;(2)具有圆形空洞的板的拉伸;(3)具有椭圆空洞的无限平面。     

Effects of Different Plasma Energy Treatments on n-Type Al0.4Ga0.6N Material

El3ctronic properties, surface chemistry and surface morphology of plasma-treated n-Al0.4Ga0.6N material are studied by electrical contact measurements, atomic force microscopy and x-ray photoemission spectroscopy. Although excessive etching can cause the surface roughness to significantly increase, the nitrogen vacancies VN produced by the excessive etching can be compensated for by the negative effects of the rougher surface. Thus, VN produced by excessive etching plays a key role in Ohmic contact of high-A1 content AIGaN and it can reduce Ohmic contact resistance. The effect of rapid thermal annealing on the performance of n-Al0.4Ga0.6N can significantly reduce the etching damage caused by excessive etching.