Geometric Phase and Sidebands

Geometric phase of mixed state is expanded for a two-level atom interacting with a quantized field mode, where master equation is a modified Bloch equation with constant terms that are used to explain emergence of sidebands in the spectrum of the fluorescent light. The results show that geometric phase transition is observed for medium initial angle when the Rabi frequency associated with the driving field becomes comparable to the spectral width of the atom. We find that the geometric phase transition depends on population inversion and Bloch radius, which is helpful to understand mechanism of sideband.     

Applications of vertically oriented TiO2 micro-pillars array on the electrode of dye-sensitized solar cell

In this research, dye-sensitized solar cells based on TiO₂ micro-pillars fabricated by inductive couple plasma etcher were investigated by analyses of X-ray diffraction (XRD), scanning electron microscopy (SEM), contact angle, ultraviolet-visible absorption spectra (UV-vis), and current-voltage characteristics. X-ray diffraction patterns show that the TiO₂ anatase phase forms while sintering at 450 °C for 30 min. The SEM images reveal that the diameter and height of TiO₂ micro-pillars are about 3 and 0.8 μm, respectively. The measurements of contact angle between TiO₂ micro-pillars and deionized water (DI water) reveal that the TiO₂ micro-pillars is super-hydrophilic while annealed at 450 °C for 30 min.The absorption spectrum of TiO₂ micro-pillars is better than TiO₂ thin film and can be widely improved in visible region with N3 dye adsorbed. The results of current-voltage (I-V) characteristics analysis reveal that dye-sensitized solar cell with TiO₂ micro-pillars electrode has better I-V characteristics and efficiency than TiO₂ film electrodes. This result may be due to the annealed TiO₂ micro-pillars applied on the electrode of dye-sensitized solar cell can increase the contact area between TiO₂ and dye, resulting in the enhancement of I-V characteristics and efficiency for dye-sensitized solar cell.     

Effect of heat treatment on ZrO2-embedded electrospun carbon fibers used for efficient electromagnetic interference shielding

ZrO₂-embedded carbon fibers were prepared for use as an electromagnetic interference (EMI) shielding material by electrospinning and heat treatment methods. Structural changes were observed in the ZrO₂ and in the carbon structures by XRD and Raman spectroscopy, respectively. During heat treatment, XRD analysis results revealed a transition from a monoclinic structure to a tetragonal structure in ZrO₂ and a graphitization in the structural formation of carbon fibers was observed by Raman spectroscopy. It was observed that these structural changes in the ZrO₂ and the carbon fibers improved the real and imaginary permittivities by a factor of more than 3.5. The EMI shielding efficiency (SE) improved along with the permittivity with higher treatment temperatures and greater amounts of embedded ZrO₂; the highest average EMI SE achieved was 31.79 dB in 800-8500 MHz. The heat treatment played an important role in the improvements in the permittivity and in the EMI SE because of the heat-induced structural changes of the ZrO₂-embedded electrospun carbon fibers. We suggest that the EMI shielding of the fibers is primarily due to the absorption of electromagnetic waves, which prevents secondary EMI by reflection of electromagnetic waves.     

High temperature characteristics of ZnO-based MOS-FETs with a photochemical vapor deposition SiO2 gate dielectric

The authors report the fabrication of ZnO-based metal-oxide-semiconductor field effect transistors (MOSFETs) with a high quality SiO₂ gate dielectric by photochemical vapor deposition (photo-CVD) on a sapphire substrate. Compared with ZnO-based metal-semiconductor FETs (MESFETs), it was found that the gate leakage current was decreased to more than two orders of magnitude by inserting the photo-CVD SiO₂ gate dielectric between ZnO and gate metal. Besides, it was also found that the fabricated ZnO MOSFETs can achieve normal operation of FET, even operated at 150 °C. This could be attributed to the high quality of photo-CVD SiO₂ layer. With a 2 μm gate length, the saturated I_ds and maximum transconductance (G_m) were 61.1 mA/mm and 10.2 mS/mm for ZnO-based MOSFETs measured at room temperature, while 45.7 mA/mm and 7.67 mS/mm for that measured at 150 °C, respectively.     

Nanosecond dynamics of ferroelectric/dielectric superlattices

The nanosecond response of a PbTiO(3)/SrTiO(3) ferroelectric/dielectric superlattice to applied electric fields is closely linked to the dynamics of striped domains of the remnant polarization. The intensity of domain satellite reflections observed with time-resolved x-ray microdiffraction decays in 5-100 ns depending on the magnitude of the electric field. The piezoelectric response of the superlattice within stripe domains is strongly suppressed due to electromechanical clamping between adjacent regions of opposite polarization. Regions of the superlattice that have been switched into a uniform polarization state by the applied electric field, however, exhibit piezoelectricity during the course of the switching process. We propose a switching model different from previous models of the switching of superlattices, based instead on a spatially heterogeneous transformation between striped and uniform polarization states.     

Higher-order space-charge field effects on the self-deflection of two-photon bright photovoltaic spatial solitons

We investigate numerically the effects of higher-order space-charge field on the self-deflection of bright photovoltaic spatial solitons in two-photon photovoltaic photorefractive crystals under steady-state conditions. The expression for an induced space-charge electric field, including higher-order space-charge field terms is obtained. The dynamical evolution equation is built in which the effects that arise from these higher-order terms are considered. Numerical results indicate that bright photovoltaic solitons can bend towards both the same direction as the crystal's c-axis and the opposite direction, respectively. Specifically, self-deflection cannot occur for bright photovoltaic solitons if the strength of the photovoltaic field and the intensity of the input beam are appropriately selected. Relevant examples are provided.     

金属卟啉配合物在无机层状框架中的插入组装及光学性能

利用插入化学法,将金属卟啉配合物——四苯基卟啉合银(Ⅱ),组装到改性磷酸锆(十二烷基三甲基铵磷酸锆)无机层状物中.配合物与改性磷酸锆作用后,层状框架的层间距由3.00nm调整到1.96 nm,卟啉的Soret吸收带和发射光谱都出现明显的位移,其中最大吸收由421 nm红移到429 nm,最大发射由651 nm红移到65...     

第一性原理研究KDP晶体中Ba取代K点缺陷

 用基于第一性原理的CASTEP模拟了Ba替代K缺陷前后形成的电子结构和能态密度。发现晶体能带宽度降至6.4 eV左右,对应着380 nm的双光子吸收,这一结果可以解释掺Ba晶体在紫外波段的吸收现象。Ba替代K点缺陷仅使其周围的晶格及电子结构发生轻微畸变,对晶体整体结构影响不大。     

计算机控制光学表面成形中大规模驻留时间求解

采用基于稀疏矩阵的大规模非负最小二乘法,对大口径、微浮雕结构光学元件加工中的驻留时间进行了分析与求解,并对该算法开展了正则化研究。仿真结果表明:与传统非负最小二乘法相比,基于稀疏矩阵的大规模非负最小二乘法精度高、效率快。采用该算法仿真加工平均振幅为1.177 6倍波长的大口径、微浮雕结构光学元件,误差面形均方根收敛至0.067倍波长。     

含超导材料Thue-Morse序列一维光子晶体传输特性研究

超导光子晶体是一类重要的带隙可调谐的光子晶体.利用传输矩阵法研究了含超导材料的Thue -Morse序列准周期结构—维光子晶体在可见光波段的传输特性.数值结果表明在正入射时,光子带隙宽度和位置基本不随序列项数的增加而改变;准周期超导光子晶体的传输特性可以通过改变传统电介质材料的结构参数和环境温度等来进行调节.