The possibility to use ‘energy plus transmutation’ set-up for neutron production and transport benchmark studies

The set-up ‘energy plus transmutation’, consisting of a thick lead target and a natural uranium blanket, was irradiated by relativistic proton beams with the energy from 0.7 GeV up to 2 GeV. Neutron field was measured in different places of this set-up using different activation detectors. The possibilities of using the obtained data for benchmark studies are analyzed in this paper. Uncertainties of experimental data are shown and discussed. The experimental data are compared with results of simulation with MCNPX code.      

简单的方法制备°-Fe2O3纳米粒子及其磁性质和电化学性质

报道了制备磁性Fe2O3纳米粒子的一种简单易行的方法．利用部分还原共沉淀法， 以Na2S2O4作为还原剂， 用FeCl3先制备出Fe2O3纳米微粒， 再在空气中直接煅烧， 成功地制备出粒径较均匀(约13 nm)的磁性Fe2O3微粒． 实验发现Na2S2O4在部分还原共沉淀法中起到了去氧剂兼还原剂的特殊作用．研究表明， 样品在室温下具有铁磁性， 其饱和磁化强度和矫顽力分别为70 emu/g和164 Oe； 产物具有好的电化学性质，在3.0?0.3 V(相对于金属锂)、0.2 mA/cm2时，样品的首次放电容量可达到933 mAh/g．同时还讨论了放电过程中金属锂与Fe2O3的反应机理．     

Surface status and size influences of nickel nanoparticles on sulfur compound adsorption

Metallic nickel nanoparticles were incorporated on mesoporous silica to remove sulfur compounds in diesel selectively. In the first method, nickel nanoparticles were formed on mesoporous silica SBA-15 by impregnation and subsequent reduction of nickel nitrate. The sulfur adsorption capacity was strongly dependent on the nickel loading and the average nickel particle size. In the second method, nickel nanoparticles were synthesized in solution in the presence of a capping agent and then incorporated in mesoporous silica MCF by sonication. Although these particles maintain their sizes on the MCF surface after heat treatment, capping agent remaining on the Ni particle surface might interfere the adsorption of sulfur compounds.     

A study of Ga layers on Si(1 0 0)-(2 × 1) by SR-PES: Influence of adsorbed water

Results for deposition and thermal annealing of gallium on the Si(1 0 0)-(2 × 1) surface achieved by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) are presented. In addition to deposition of Ga on a clean surface, the influence of water adsorption on the arrangement of gallium atoms was also studied. The results on Ga deposition at a higher temperature (490 °C) are consistent with a Ga ad-dimer model showing equivalent bond arrangement of all Ga atoms for coverages up to 0.5 ML. The deposition onto a surface with adsorbed water at room temperature led to a disordered gallium growth. In this case gallium atoms bind to silicon dimers already binding fragments of adsorbed water. A subsequent annealing of these layers leads to a surface structure similar to the Ga-(2 × 2), however, it is less ordered, probably due to the presence of silicon oxides formed from water fragments.     

Widely tunable, high-repetition-rate, dual signal-wave optical parametric oscillator by using two periodically poled crystals

This paper reports on a high-repetition-rate dual signal-wave (DSW) optical parametric oscillator (OPO) operating at the 1.5 μm band with tunable wavelength intervals from 2.5 nm to 69.1 nm. Two periodically poled crystals, a periodically poled lithium niobate (PPLN) with multiple gratings and a single grating MgO-doped PPLN (PPMgOLN), are cascaded in the same OPO cavity to generate dual signal-waves by using quasi-phase-matched (QPM) technique. The pump source was a Q-switched diode-pumped Nd:YVO₄ laser operating at 50 kHz. At an incident pump power of 3 W, an average output power of 169.6 mW at 1489.2 nm and 1558.3 nm has been achieved.     

Single-Photon Detection at Telecom Wavelengths

A single-photon detector based on an InGaAs avalanche photodiode has been developed for use at telecom wavelengths. A suitable delay and sampling gate modulation circuit are used to prevent positive and negative transient pulses from influencing the detection of true photon induced avalanches. A monostable trigger circuit eliminates the influence of avalanche peak jitter, and a dead time modulation feedback control circuit decreases the afterpulsing. From performance tests we lind that at the optimum operation point, the quantum efficiency is 12% and the dark count rate 1.5 × 10^-6 ns^-1, with a detection rate of 500 kHz.     

A threshold voltage model MOSFETs considering for high-k gate-dielectric fringing-field effect

In this paper, a threshold voltage model for high-k gate-dielectric metal-oxide-semiconductor field-effect transistors （MOSFETs） is developed, with more accurate boundary conditions of the gate dielectric derived through a conformal mapping transformation method to consider the fringing-field effects including the influences of high-k gate-dielectric and sidewall spacer. Comparing with similar models, the proposed model can be applied to general situations where the gate dielectric and sidewall spacer can have different dielectric constants. The influences of sidewall spacer and high-k gate dielectric on fringing field distribution of the gate dielectric and thus threshold voltage behaviours of a MOSFET are discussed in detail.     

Photoresponse of the In0.3Ga0.7N metal-insulator-semiconductor photodetectors

In0.3Ga0.7N metal-insulator-semiconductor （MIS） and metal-semiconductor （MS） surface barrier photodetectors have been fabricated. The In0.3Ga0.7N epilayers were grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The photoresponse and reverse current-voltage characteristics of the In0.3Ga0.7N MIS and MS photodetectors were measured. A best zero bias responsivity of 0.18 A/W at 450 nm is obtained for the In0.3Ga0.7N MIS photodetector with 10 nm Si3N4 insulator layer, which is more than ten times higher than the In0.3Ga0.7N MS photodetector. The reason is attributed to the decrease of the interface states and increase of surface barrier height by the inserted insulator. The influence of the thickness of the Si3N4 insulator layer on the photoresponsivity of the MIS photodetector is also discussed.     

Graphical Models for Ordinal Data

This article considers a graphical model for ordinal variables, where it is assumed that the data are generated by discretizing the marginal distributions of a latent multivariate Gaussian distribution. The relationships between these ordinal variables are then described by the underlying Gaussian graphical model and can be inferred by estimating the corresponding concentration matrix. Direct estimation of the model is computationally expensive, but an approximate EM-like algorithm is developed to provide an accurate estimate of the parameters at a fraction of the computational cost. Numerical evidence based on simulation studies shows the strong performance of the algorithm, which is also illustrated on datasets on movie ratings and an educational survey.