ZnO nanoparticles embedded in UVM-7-like mesoporous silica materials: Synthesis and characterization

ZnO nanodomains embedded in bimodal mesoporous silica (UVM-7) materials with high Zn content (4≤Si/Zn≤30) have been synthesized by an one-pot surfactant-assisted procedure from a hydro alcoholic medium using a cationic surfactant (CTMABr=cetyltrimethylammonium bromide) as structural directing agent, and starting from molecular atrane complexes of Zn and Si as hydrolytic inorganic precursors. This chemical procedure allows optimizing the dispersion of the ZnO particles in the silica walls. The bimodal mesoporous nature of the final high surface area nano-sized materials is confirmed by XRD, TEM, and N₂ adsorption–desorption isotherms. The small intra-particle mesopore system is due to the supramolecular templating effect of the surfactant, while the large pores have their origin in the packing voids generated by aggregation of the primary nanometric mesoporous particles. A limited pore blocking and a high accessibility to the ZnO active nanoparticles have been achieved. The effects induced by the progressive incorporation of ZnO nanoparticles into the mesostructure have been examined, including a careful optical spectroscopic study (PL and UV–visible).     

Electron–phonon interaction in CdS/ZnS quantum dot

Electron–phonon effects on the two first electronic states in both CdS and GaAs quantum dots are investigated. Both confined longitudinal optical (LO) and surface optical (SO) phonons are considered. We use the intermediate-type variational approach. We find that, shifts caused by phonon contribution on electronic energies are more significant for CdS quantum dot. We find, also, that, contrary to GaAs based quantum dots, we shouldn’t neglect the SO phonon contribution for CdS based ones, especially for small dots.     

Excitonic states of weakly one-dimensional quantum wires

Il Nuovo Cimento D - We report on calculations of excitonic properties of weakly one-dimensional quantum wires where the exciton centre of mass is quantized by the harmonic potentials of electron...     

Optical properties of acceptor-exciton complexes in ZnO/SiO2 quantum dots

The binding energy E_b of the acceptor-exciton complex (A⁻,X) as a function of the radius (or of the impurity position of the acceptor) and the normalized oscillator strength of (A⁻,X) in spherical ZnO quantum dots (QDs) embedded in a SiO₂ matrix are calculated using the effective-mass approximation under the diagonalzation matrix technique, including a three-dimensional confinement of the carrier in the QD and assuming a finite depth. Numerical results show that the binding energy of the acceptor-exciton complexes is particularly robust when the impurity position of the acceptor is in the center of the ZnO QDs. It has been clearly shown from our calculations that these physical parameters are very sensitive to the quantum dot size and to the impurity position. These results could be particularly helpful, since they are closely related to experiments performed on such nanoparticles. This may allow us to improve the stability and efficiency of the semiconductor quantum dot luminescence which is considered critical.     

Energy of excitons and acceptor-exciton complexes to explain the origin of ultraviolet photoluminescence in ZnO quantum dots embedded in a SiO2 matrix

Assuming finite depth and within the effective mass approximation, the energies of exciton states and of the acceptor-exciton complexes confined in spherical ZnO quantum dots (QDs) embedded in a SiO₂ matrix are calculated using a matrix procedure, including a three-dimensional confinement of carrier in the QDs. This theoretical model has been designed to illustrate the two emission bands in the UV region observed in our experimental Photoluminescence spectrum (PL), with the first emission band observed at 3.04 eV and attributed to the bound ionized acceptor-exciton complexes, and the second one located at 3.5 and assigned to the free exciton. Our calculations have revealed a good agreement between the matrix element calculation method and the experimental results.