Moments of an exponential functional of random walks and permutations with given descent sets

The exponential functional of simple, symmetric random walks with negative drift is an infinite polynomial Y = 1 + ξ₁ + ξ₁ξ₂ + ξ₁ξ₂ξ₃ + ⋯ of independent and identically distributed non-negative random variables. It has moments that are rational functions of the variables μ _k = E(ξ ^k ) < 1 with universal coefficients. It turns out that such a coefficient is equal to the number of permutations with descent set defined by the multiindex of the coefficient. A recursion enumerates all numbers of permutations with given descent sets in the form of a Pascal-type triangle. This revised version was published online in August 2006 with corrections to the Cover Date.     

Generating cryptographically strong Boolean functions using partial information

Periodica Mathematica Hungarica - In our paper we study the usage of partially defined Boolean functions (PDBFs) for generating cryptographically strong Boolean functions. A PDBF can be considered...     

A note on a generalized Douglas space

Periodica Mathematica Hungarica -     

Influence of the sample orientation in Sn<Subscript>2</Subscript>P<Subscript>2</Subscript>S<Subscript>6</Subscript> crystals on the hydrostatic piezoelectric coefficients

The influence of the sample orientation on the effective value of the hydrostatic piezoelectric coefficients d _h ⁽ⁱ⁾ of Sn₂P₂S₆ crystals has been studied. The hydrostatic piezoelectric coefficients d _h ⁽¹⁾ and d′ _h ⁽³⁾ , were measured, d _h ⁽¹⁾ =(244±3) pC/N and d′ _h ⁽³⁾ =(92±1) pC/N. The hydrostatic piezoelectric coefficient d _h ⁽³⁾ for orthogonal axis system was calculated to be d _h ⁽³⁾ =(87±2) pC/N. The, optimal orientation of the sample has been found as (Xy l)−20°-cut. Maximal value of the effective hydrostatic piezoelectric coefficient d _h ⁽¹⁾ equals 260 pC/N. Double rotated samples were also studied. The orientation of the samples insensitive to the pressure has been found. The theoretical mean value of hydrostatic piezoelectric coefficient (d _h ) _mean corresponding to randomly oriented Sn₂P₂S₆ grains in a poled composite has been calculated to be (d _h ) _mean =136 pC/N.     

Non-Trivial t-Intersection in the Function Lattice

The function lattice, or generalized Boolean algebra, is the set of ℓ-tuples with the ith coordinate an integer between 0 and a bound n_i. Two ℓ-tuples t-intersect if they have at least t common nonzero coordinates. We prove a Hilton–Milner type theorem for systems of t-intersecting ℓ-tuples.Received September 29, 2004     

Oscillations of linear integro-differential equations

Sufficient conditions which guarantee that certain linear integro-differential equation cannot have a positive solution are established.     

The linear polarization constant of R n

Summary He present work deals with estimations of the n-th linear polarization constant c(H)_n of an n-dimensional real Hilbert space H. We provide some new lower bounds on the value of sup_║y║=1 │1,y> ... n,y>│, where x₁, ... ,x_n are unit vectors in H. In particular, the results improve an earlier estimate of Marcus. However, the intriguing conjecture c(H) _n= n^n/2 remains open.     

Analytic solutions of the Schrödinger equation for the modified quartic oscillator

No analytic solutions of the Schrödinger equation are known for the quartic anharmonic oscillator. We show in this paper that there are closely related modified quartic oscillators with the potential depending on |x| for which analytic solutions for some states exist. These results can be extended to the higher order oscillators     

Study of the gas-phase parameters affecting the silicon-oxide film deposition induced by an ArF laser

A study of the gas-phase parameters involved in ArF laser induced chemical vapour deposition of silicon-oxide thin films is presented. A complete set of experiments has been performed showing the influence of the concentration of the precursor gases, N₂O and SiH₄, and their influence on total and partial pressures on film growth and properties. In this paper we demonstrate the ability of this LCVD method to deposit silicon oxide films of different compositions and densities by appropriate control of gas composition and total pressure. Moreover, a material specific calibration plot comprising data obtained using different preparation techniques is presented, allowing determination of the stoichiometry of SiO _x films by using FTIR spectroscopy independently of the deposition method. For the range of processing conditions examined, the experimental results suggest that chemical processes governing deposition take place mainly in the gas phase.