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81.
The exponential functional of simple, symmetric random walks with negative
drift is an infinite polynomial Y = 1 + ξ1 + ξ1ξ2 + ξ1ξ2ξ3 + ⋯ of independent
and identically distributed non-negative random variables. It has moments that are
rational functions of the variables μ
k
= E(ξ
k
) < 1 with universal coefficients. It
turns out that such a coefficient is equal to the number of permutations with descent
set defined by the multiindex of the coefficient. A recursion enumerates all numbers
of permutations with given descent sets in the form of a Pascal-type triangle.
This revised version was published online in August 2006 with corrections to the Cover Date. 相似文献
82.
Periodica Mathematica Hungarica - In our paper we study the usage of partially defined Boolean functions (PDBFs) for generating cryptographically strong Boolean functions. A PDBF can be considered... 相似文献
83.
A note on a generalized Douglas space 总被引:1,自引:0,他引:1
Periodica Mathematica Hungarica - 相似文献
84.
The influence of the sample orientation on the effective value of the hydrostatic piezoelectric coefficients d
h
(i)
of Sn2P2S6 crystals has been studied. The hydrostatic piezoelectric coefficients d
h
(1)
and d′
h
(3)
, were measured, d
h
(1)
=(244±3) pC/N and d′
h
(3)
=(92±1) pC/N. The hydrostatic piezoelectric coefficient d
h
(3)
for orthogonal axis system was calculated to be d
h
(3)
=(87±2) pC/N. The, optimal orientation of the sample has been found as (Xy l)−20°-cut. Maximal value of the effective hydrostatic piezoelectric coefficient d
h
(1)
equals 260 pC/N. Double rotated samples were also studied. The orientation of the samples insensitive to the pressure has
been found. The theoretical mean value of hydrostatic piezoelectric coefficient (d
h
)
mean
corresponding to randomly oriented Sn2P2S6 grains in a poled composite has been calculated to be (d
h
)
mean
=136 pC/N. 相似文献
85.
The function lattice, or generalized Boolean algebra, is the set of ℓ-tuples with the ith coordinate an integer between 0 and a bound ni. Two ℓ-tuples t-intersect if they have at least t common nonzero coordinates. We prove a Hilton–Milner type theorem for systems of t-intersecting ℓ-tuples.Received September 29, 2004 相似文献
86.
Sufficient conditions which guarantee that certain linear integro-differential equation cannot have a positive solution are
established. 相似文献
87.
Máté Matolcsi 《Acta Mathematica Hungarica》2005,108(1-2):129-136
Summary He present work deals with estimations of the n-th linear polarization constant c(H)n of an n-dimensional real Hilbert space H. We provide some new lower bounds on the value of sup║y║=1 │1,y> ... n,y>│, where x1, ... ,xn are unit vectors in H. In particular, the results improve an earlier estimate of Marcus. However, the intriguing conjecture c(H) n= nn/2 remains open. 相似文献
88.
89.
No analytic solutions of the Schrödinger equation are known for the quartic anharmonic oscillator. We show in this paper that there are closely related modified quartic oscillators with the potential depending on |x| for which analytic solutions for some states exist. These results can be extended to the higher order oscillators 相似文献
90.
P. González D. Fernández J. Pou E. García J. Serra B. León M. Pérez-Amor T. Szörényi 《Applied Physics A: Materials Science & Processing》1993,57(2):181-185
A study of the gas-phase parameters involved in ArF laser induced chemical vapour deposition of silicon-oxide thin films is presented. A complete set of experiments has been performed showing the influence of the concentration of the precursor gases, N2O and SiH4, and their influence on total and partial pressures on film growth and properties. In this paper we demonstrate the ability of this LCVD method to deposit silicon oxide films of different compositions and densities by appropriate control of gas composition and total pressure. Moreover, a material specific calibration plot comprising data obtained using different preparation techniques is presented, allowing determination of the stoichiometry of SiO
x
films by using FTIR spectroscopy independently of the deposition method. For the range of processing conditions examined, the experimental results suggest that chemical processes governing deposition take place mainly in the gas phase. 相似文献