A novel derivatization method for peptides to increase sensitivity and backbone fragmentation in liquid secondary-ion mass spectra.

Derivatization is used to increase both negative-ion sensitivity and positive-ion sequence information in the liquid secondary-ion mass spectra (LSIMS) of a series of peptides. The derivatization method involves acylation with pentafluorobenzoyl fluoride in a single-step reaction, and the reaction mixture is applied directly to the probe tip for analysis. Acylation takes place at the unprotected N-terminus, tyrosine, and lysine. The derivatives exhibit increased signal-to-noise ratio for [M-H]- ions, especially where there is not already an acidic amino acid residue in the peptide. In positive-ion LSIMS, the N-terminal group acts to retain the charge at the N-terminus, simplifying the fragmentation by producing N-terminal fragment ions. It also increases positive-ion fragmentation, sometimes very dramatically, making sequence determination more straightforward. The simplicity of the process, together with the enhancements it provides, make this a generally useful method for obtaining peptide structural information.     

Measurement of the transverse Doppler shift using a stored relativistic7Li+ ion beam

We have performed for the first time precision spectroscopy on a coasting fast⁷Li⁺ ion beam in a storage ring. The ion beam moving with 6.4% speed of light was first electron cooled and then merged with two counterpropagating laser beams acting on two different hyperfine transitions sharing a common upper level (λ-system). One laser was frequency locked to thea ₃ ¹²⁷J₂ hfs frequency component established as a secondary frequency standard at 514 nm. The second laser was tuned over theλ-resonance, which was recorded relative to¹²⁷J₂ hfs components. This experiment is sensitive to the time dilation in fast moving frames and will lead to new limits for the verification of special relatively. The present status of the experiment and perspectives in accuracy are discussed.     

Determination of the parameters of semiconductor quantum dots in glassy matrices from the absorption and luminescence spectra and from saturation of the optical absorption

Optical methods are described for determining the parameters of semiconducting quantum dots synthesized in a glassy borosilicate matrix. The limitations of these methods and the magnitudes of their errors are analyzed. The parameters of CdS_xSe_1−x nanocrystals in the commercial glasses KS-10, OS-12, Corning 2–61, and other experimental samples are determined. Fiz. Tverd. Tela (St. Petersburg) 39, 1865–1870 (October 1997)     

Dependence of impurity incorporation upon substrate misorientation during GaAs growth by metalorganic vapour phase epitaxy

Doping studies of the incorporation behaviour of three different dopants (Zn, In and Si) versus the misorientation of the (100) surface during MOVPE growth of GaAs have been carried out with diethylzinc, trimethylindium and disilane as precursors. The incorporation of the dopants has been studied as function of the input mole fraction dopant, growth temperature, degree and direction of misorientation. In order to explain the results we discuss the BCF theory and the nature of the steps as function of above mentioned parameters. It appears that the BCF theory alone cannot explain the results, a counteracting mechanism has been introduced based on preferential arsenic desorption from the step edges.     

Luminescence of self-trapped excitons in calcium fluoride under pulsed electron irradiation

Time-resolved pulsed spectroscopy was used to measure the luminescence spectra of calcium fluoride. Characteristic features of the luminescence of self-trapped excitons are discussed. It is shown that various configurations of self-trapped excitons incorporating hole nuclei of a more complex structure, may be formed in CaF₂ crystals. Fiz. Tverd. Tela (St. Petersburg) 40, 1226–1227 (July 1998)     

Distribution of silicon over sublattices in semiconducting A3B5 compounds

The stable site of Si substitutional impurities in GaAs and AlAs at T=0 K is determined on the basis of an analysis of the energy of solution of silicon, and of the energies of formation of intrinsic defects and the reaction energies of their interaction obtained by calculating the total energy of the disordered compounds. These calculations indicate that amphotericity and vacancies have an effect on the distribution of Si. At low Si concentrations, Si in GaAs is located on the sublattice of the group III element, and in AlAs, on the sublattice of the group V element. Fiz. Tverd. Tela (St. Petersburg) 39, 264–266 (February 1997)     

ContributionsSign-balanced covering matrices

A q × n array with entries from 0, 1,…,q − 1 is said to form a difference matrix if the vector difference (modulo q) of each pair of columns consists of a permutation of [0, 1,… q − 1]; this definition is inverted from the more standard one to be found, e.g., in Colbourn and de Launey (1996). The following idea generalizes this notion: Given an appropriate δ (-[−1, 1]^t, a λq × n array will be said to form a (t, q, λ, Δ) sign-balanced matrix if for each choice C₁, C₂,…, C_t of t columns and for each choice = (₁,…,_t) Δ of signs, the linear combination ∑_j=1^t _jC_j contains (mod q) each entry of [0, 1,…, q − 1] exactly λ times. We consider the following extremal problem in this paper: How large does the number k = k(n, t, q, λ, δ) of rows have to be so that for each choice of t columns and for each choice (₁, …, _t) of signs in δ, the linear combination ∑_j=1^t _jC_j contains each entry of [0, 1,…, q t- 1] at least λ times? We use probabilistic methods, in particular the Lovász local lemma and the Stein-Chen method of Poisson approximation to obtain general (logarithmic) upper bounds on the numbers k(n, t, q, λ, δ), and to provide Poisson approximations for the probability distribution of the number W of deficient sets of t columns, given a random array. It is proved, in addition, that arithmetic modulo q yields the smallest array - in a sense to be described.     

Order splitting in single sourcing with scheduled-release orders

Traditional inventory models assume that a buyer places one order with a supplier in each order cycle. A large number of researchers have studied the benefits of dual sourcing such that an order quantity is split and placed simultaneously with two suppliers. We show that many of the benefits of dual sourcing are due to order splitting rather than using two suppliers. We investigate order splitting with one supplier such that the first part of the order is sent out immediately but the second part of the order is released later (scheduled-release). Through extensive computational results, we show that in many situations where dual sourcing or the use of a cheaper supplier would be cost effective, single sourcing with order splitting using scheduled-release orders is better. The paper provides a quantitative rationale to continue with one supplier. We also summarize the qualitative reasons to prefer single sourcing or multiple sourcing.