Superconvergence of recovered gradients of discrete time/piecewise linear Galerkin approximations for linear and nonlinear parabolic problems

Superconvergent error estimates in l₂(H¹) and l∞(H¹) norms are derived for recovered gradients of finite difference in time/piecewise linear Galerkin approximations in space for linear and quasinonlinear parabolic problems in two space dimensions. The analysis extends previous results for elliptic problems to the parabolic context, and covers problems in regions with nonsmooth boundaries under certain assumptions on the regularity of the solutions. © 1994 John Wiley & Sons, Inc.     

Rotational Spectra of Argon Acetone: A Two-Top Internally Rotating Complex

The rotational spectra of the argon acetone weakly bound complex was studied by pulsed jet Fabry-Perot Fourier transform microwave spectroscopy. Over 500 transitions of the complex were measured between 5.5 and 26 GHz from J=2-1 to J=12-11. The two methyl groups undergo hindered internal rotation resulting in four or five internal rotation states. The microwave transitions are within these states, resulting in a splitting of each rotational transition into four and sometimes five distinct transitions. The three-fold barrier to internal rotation is determined to be 260 cm⁻¹, 2% less than the 266 cm⁻¹ barrier in acetone itself. The structure of the complex has the argon atom above the heavy atom plane of the acetone, 3.52 Å from the CO bond and approximately in the C_s plane, which is perpendicular to the CCC plane of acetone.     

Determination of the parameters of semiconductor quantum dots in glassy matrices from the absorption and luminescence spectra and from saturation of the optical absorption

Optical methods are described for determining the parameters of semiconducting quantum dots synthesized in a glassy borosilicate matrix. The limitations of these methods and the magnitudes of their errors are analyzed. The parameters of CdS_xSe_1−x nanocrystals in the commercial glasses KS-10, OS-12, Corning 2–61, and other experimental samples are determined. Fiz. Tverd. Tela (St. Petersburg) 39, 1865–1870 (October 1997)     

Dependence of impurity incorporation upon substrate misorientation during GaAs growth by metalorganic vapour phase epitaxy

Doping studies of the incorporation behaviour of three different dopants (Zn, In and Si) versus the misorientation of the (100) surface during MOVPE growth of GaAs have been carried out with diethylzinc, trimethylindium and disilane as precursors. The incorporation of the dopants has been studied as function of the input mole fraction dopant, growth temperature, degree and direction of misorientation. In order to explain the results we discuss the BCF theory and the nature of the steps as function of above mentioned parameters. It appears that the BCF theory alone cannot explain the results, a counteracting mechanism has been introduced based on preferential arsenic desorption from the step edges.     

Semicontinuity and Quasiconvex Functions

Criteria are derived for quasiconvex functions under lower semicontinuity and upper semicontinuity conditions. The results thus obtained generalize earlier results for convex functions. We also give new conditions under which a given function is r-convex in the sense given by Avriel.     

The completely positive and doubly nonnegative completion problems

We prove the following. Let G be an undirected graph. Every partially specified symmetric matrix, the graph of whose specified entries is G and each of whose fully specified submatrices is completely positive (equal to BB^T for some entrywise nonnegative matrix B), may be completed to a completely positive matrix if and only if G is a block-clique graph (a chordal graph in which distinct maximal cliques overlap in at most one vertex). The same result holds for matrices that are doubly nonnegative (entrywise nonnegative and positive semidefinite).     

MEASUREMENT OF CONTACT ANGLE IN A CLEARANCE-FIT PIN-LOADED HOLE

A simple experimental technique using an instrumented pin was developed for the measurement of the load-contact variation in a clearance-fit, pin-loaded hole. The method is applicable to both conducting and nonconducting materials.