Strong visible PL from the nc-Si thin film by Ni silicide mediated crystallization

We studied the growth of nanocrystalline silicon (nc-Si) thin film exhibiting a strong room temperature photoluminescence (PL) at 1.81–2.003 eV. The amorphous silicon was crystallized by Ni silicide mediated crystallization (Ni SMC) and then Secco-etched to exhibit the PL. The PL peak energy and intensity increase with increasing the metal density on the a-Si because of the reduction in the grain size down to 2 nm. The photoluminescence energy and peak intensity depend strongly on the Secco etch time because the grain size is reduced by etching the grain boundaries.     

Synthesis and characterization of Ni magnetic nanoparticles in AlMCM41 host

Superparamagnetic nickel nanoparticles were prepared by incorporating nickel ion into AlMCM41 as a nanoreactor and then reduced with sodium borohydride or H₂ gas. Products were characterized by elemental analysis, transmission electron microscopy, X-ray powder diffraction, and magnetic susceptibility. The nickel particle size and blocking temperature depend on the reduction method.     

Optical properties of dye-doped zirconia films by spectroscopic ellipsometry

The optical properties of zirconia films doped with rhodamine 6G and oxazine 725 by the sol-gel process were investigated using spectroscopic ellipsometry (SE). Accurate refractive index n and the extinction coefficient k were determined using a three-oscillator classical Lorentz model in the wavelength range of 300-800 nm. The derived refractive index of dye-doped films exhibited anomalous dispersion in the absorption region. Wavelength tunable output lasing action yellow and near-infrared wavelength region was achieved by DFB configuration using zirconia films doped with R6G and oxazine 725.     

Determination of the debris produced from poly(ethylene terephthalate) during KrF excimer laser ablation

Pulsed UV laser beams, which are widely used in the processing of polymers, have many advantages because their photon energy is higher than the binding energy of polymers. Fabricating polymers with a UV laser process is faster, cleaner, and more convenient than with other processes. Nevertheless, some problems occur in the precision microprocessing of polymers. For example, the formation and deposition of surface debris, which is produced from the breakdown of either polymer chains or radical bonds.To determine the formation and origin of surface debris, a KrF excimer laser beam (248 nm) was used in the processing of poly(ethylene terephthalate) (PET). The investigation of the debris formation was facilitated by UV-vis spectroscopy, ATR FT-IR spectroscopy, and NMR spectroscopy. The UV-vis absorption peak indicates that the primary chromophore in the PET is benzoate. Furthermore, because benzoate causes the primary absorption, the absorbed energy is transferred by heat generation to an unsaturated ester. The ATR FT-IR spectrometer measurements show that the phenyl systems in the benzoate are demolished by ablation. This phenomenon indicates that the photochemical reaction causes the benzoate bonds to break down, and this breakdown in turn causes the carbonization to leave debris on the PET.     

Temperature effect on deposition rate of silicon nitride films

Temperature effects on deposition rate of silicon nitride films were characterized by building a neural network prediction model. The silicon nitride films were deposited by using a plasma enhanced chemical vapor deposition system and process parameter effects were systematically characterized by 2⁶⁻¹ fractional factorial experiment. The process parameters involved include a radio frequency power, pressure, temperature, SiH₄, N₂, and NH₃ flow rates. The prediction performance of generalized regression neural network was drastically improved by optimizing multi-valued training factors using a genetic algorithm. Several 3D plots were generated to investigate parameter effects at various temperatures. Predicted variations were experimentally validated. The temperature effect on the deposition rate was a complex function of parameters but N₂ flow rate. Larger decreases in the deposition rate with the temperature were only noticed at lower SiH₄ (or higher NH₃) flow rates. Typical effects of SiH₄ or NH₃ flow rate were only observed at higher or lower temperatures. A comparison with the refractive index model facilitated a selective choice of either SiH₄ or NH₃ for process optimization.     

Characteristics of Ti0.97Co0.03O2:Sb0.01 dilute magnetic semiconducting thin films deposited at 500 °C by pulsed laser deposition

Epitaxial Ti_0.97Co_0.03O₂:Sb_0.01(TCO:Sb) films were deposited on R-Al₂O₃ (1 1 0 2) substrates at 500 °C in various deposition pressures by pulsed laser deposition. The solubility of cobalt within the films increases with decreasing deposition pressure at a deposition temperature of 500 °C. The TCO:Sb films deposited at 5×10⁻⁶ Torr exhibit a p-type anomalous Hall effect having a hole concentration of 6.1×10²²/cm³ at 300 K. On the other hand, films deposited at 4×10⁻⁴ Torr exhibits an n-type anomalous Hall effect having an electron concentration of about 1.1×10²¹/cm³. p- or n-type DMS characteristics depends on the change of the structure of TCO:Sb films and the solubility of Co is possible by controlling the deposition pressure.     

Control of defect concentrations within a semiconductor through adsorption

The technologically useful properties of a crystalline solid depend upon the concentration of defects it contains. Here we show that defect concentrations as deep as 0.5 microm within a semiconductor can be profoundly influenced by gas adsorption. Self-diffusion rates within silicon show that nitrogen atoms adsorbed at less than 1% of a monolayer lead to defect concentrations that vary controllably over several orders of magnitude. The results show that previous measurements of diffusion and defect thermodynamics in semiconductors may have suffered from neglect of adsorption effects.     

Band gap tunable and improved microstructure characteristics of Cu2ZnSn(S1−x,Sex)4 thin films by annealing under atmosphere containing S and Se

Cu₂ZnSn(S_xS_1?x)₄ (CZTSSe) thin films were prepared by annealing a stacked precursor prepared on Mo coated glass substrates by the sputtering technique. The stacked precursor thin films were prepared from Cu, SnS₂, and ZnS targets at room temperature with stacking orders of Cu/SnS₂/ZnS. The stacked precursor thin films were annealed using a tubular two zone furnace system under a mixed N₂ (95%) + H₂S (5%) + Se vaporization atmosphere at 580 °C for 2 h. The effects of different Se vaporization temperature from 250 °C to 500 °C on the structural, morphological, chemical, and optical properties of the CZTSSe thin films were investigated. X-ray diffraction patterns, Raman spectroscopy, and X-ray photoelectron spectroscopy results showed that the annealed thin films had a single kesterite crystal structure without a secondary phase. The 2θ angle position for the peaks from the (112) plane in the annealed thin films decreased with increasing Se vaporization temperature. Energy dispersive X-ray results showed that the presence of Se in annealed thin films increased from 0 at% to 42.7 at% with increasing Se vaporization temperatures. UV–VIS spectroscopy results showed that the absorption coefficient of all the annealed thin films was over 10⁴ cm^?1 and that the optical band gap energy decreased from 1.5 eV to 1.05 eV with increasing Se vaporization temperature.     

Strong coupling in a microcavity LED

Thin films of polyelectrolyte/J aggregate dye bilayers with high absorption coefficient (6 nm thick with alpha approximately equal to 1.0 x 10(6) cm(-1)) inserted in an optical microcavity enable the cavity quantum electrodynamic strong coupling limit to be reached at room temperature with a coupling strength (Rabi splitting) of 265 +/- 15 meV. By embedding these films in a resonant cavity organic LED structure, we demonstrate the first emissive electrically pumped exciton-polariton device.     

Vibration characteristics of a piezoelectric open-shell transducer

This paper deals with the vibration characteristics of a piezoelectric open-shell transducer which was made by dividing a cylindrical piezoelectric transducer longitudinally into two segments. Two-dimensional governing equations were derived by using the cylindrical membrane theory. Applying mechanical and electrical boundary conditions yielded a characteristic equation for the resonance frequencies of the piezoelectric open-shell transducer. The fundamental frequency and the electromechanical coupling factor were calculated and compared with the results of the finite element analysis and experiment. The fundamental mode shape obtained theoretically was compared with the result of the finite element analysis. The theoretical analysis was verified to provide the vibration characteristics of an open-shell transducer.