Influence of angular momentum in axially symmetric potentials with octupole deformation

The chaotic classical single-particle motion in an oblate octupole deformed potential with a nonzero z-component of angular momentum Lz is investigated. The stability analysis of the trajectories shows that with increasing rotation of the system, the unstable negative curvature regions of the effective potential surface decrease, which converts the chaotic motion of the system into a regular one.     

Temperature Insensitivity of Optical Properties of InAs/GaAs Quantum Dots due to a Pregrown InGaAs Quantum Well

Both the peak position and linewidth in the photoluminescence spectrum of the InAs/GaAs quantum dots usually vary in an anomalous way with increasing temperature. Such anomalous optical behaviour is eliminated by inserting an In0.2Ga0.8As quantum well below the quantum dot layer in molecular beam epitaxy. The insensitivity of the photoluminescence spectra to temperature is explained in terms of the effective carrier redistribution between quantum dots through the In0.2Ga0.8As quantum well.     

Influence of Oxygen Vacancy on Transport Property in Perovskite Oxide Heterostructures

Effect of oxygen vacancy on transport property of perovskite microstructures is studied theoretically. Compared with calculated and measured I-V curves, it is revealed that electron conduction plays an important role in the oxygen nonstoichiometry perovskite heterostructures even with hole-doped or un-doped material due to the oxygen vacancies. In addition, a detailed understanding of the influence of oxygen vacancy concentration and temperature on the conduction characteristics of oxide heterojunction with both forward and reverse biases is obtained by calculation.     

Acceptor Concentration Effects on Photovoltaic Response in the La1-xSrxMnO3/SrNbyTi1-yO3 Heterojunction

Photovoltaic response in the heterojunction of La1-x SrxMnO3/SrNby Ti1-yO3 （LSMO/SNTO） is analyzed theoretically based on the drift-diffusion model. It is found that the decrease of acceptor concentration in the La1-xSrxMnO3 layer of hereto junction can increase the peak value of photovoltaic signal and the speed of photovoltaic response, whereas the changing of donor concentration in the SrNby Ti1-yO3 layer has no such evident effect. Furthermore, the result also indicates that the modulation of Sr doping in La1-xSrxMnO3 is an effective method to accommodate the sensitivity and the speed of photovoltaic response for LSMO/SNTO photoelectric devices.     

Experimental Non-Local Generation of Entanglement from Independent Sources

We experimentally demonstrate a non-local generation of entanglement from two independent photonic sources in an ancilla-free process. Two bosons （photons） are entangled in polarization space by steering into a novel interferometer setup, in which they have never met each other. The entangled photons are delivered to polarization analyzers in different sites, respectively, and a non-local interaction is observed. Entanglement is further verified by the way of the measured violation of a CHSH type Bell＇s inequality with S-values of 2.54 and 27 standard deviations. Our results will shine a new light onto the understanding of how quantum mechanics works, have possible philosophic consequences on the one hand and provide an essential element for quantum information processing on the other hand. Potential applications of our results are briefly discussed.     

姜黄超临界提取物的高效液相色谱分析

用液相色谱-质谱和紫外-可见光谱对姜黄超临界提取物中的3种主要成分进行了定性分析,用高效液相色谱进行了定量分析。实验条件：用Hypersil C18为分离柱,甲醇-水(体积比40：60)为流动相,检测波长428nm,柱温40℃;姜黄素进样量在0．12～1．2μg范围内与峰面积线形关系良好(r=0．9994),平均回收率102％,重现性的RSD为1、74％(n=6)。分析结果表明超临界CO2萃取的姜黄提取物中含对二脱甲氧基姜黄素、脱甲氧基姜黄素和姜黄素,姜黄提取物中的总姜黄素含量约为90％。     

进位返加与逐位模2加及模2n加的相容程度分析

深入分析了进位返加运算与逐位模2加运算及模2^n加运算的相容程度,给出了它们的相容概率的计算公式．结论表明,进位返加运算与逐位模2加运算的相容概率尽管很小,但远大于理想值2^-n;进位返加运算与模2^n加运算的相容概率很大,近似为2／3．     

含H-单调映象的完全广义非线性变分包含

引入和研究了一类新的完全广义非线性变分包含.在Hilbert空间中利用与H-单调映象相联系的预解算子的性质,对完全广义非线性变分包含建立了解的存在性定理和构造了一种新的迭代算法,证明了由此算法生成的迭代序列强收敛于精确解.其算法和结果是最近文献中相应算法和结果的改进和推广.     

抗坏血酸在聚阿魏酸修饰玻碳电极上的电化学行为研究

研究了抗坏血酸(AA)在聚阿魏酸修饰电极上的电化学性质。在AA存在的条件下,电极过程由扩散控制,测得扩散系数为8.18×10-8cm2/s。AA浓度在0.01~5.0 mmol/L范围内与峰电流呈现良好的线性关系。通过计时安培法测得催化速率常数为8.6×103mol-1.L.s-1。     

在均匀磁场中旋转的导体厚球壳上电荷的分布--证明在磁场中转动的导体表面电荷分布无普遍公式

用简单方法求出了在均匀磁场中旋转的导体厚球壳上电荷的分布,证明了在磁场中转动的导体表面电荷分布无普遍公式。